IXYS IXFX30N110P

IXFK30N110P
IXFX30N110P
PolarTM Power MOSFET
HiPerFETTM
VDSS
ID25
=
=
1100V
30A
Ω
360mΩ
300ns
RDS(on) ≤
≤
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1100
1100
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
30
75
A
A
IAR
EAS
TC = 25°C
TC = 25°C
15
1.5
A
J
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
960
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
z
z
TJ
TJM
Tstg
V
V
TL
TSOLD
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Md
Mounting torque
(IXFK)
1.13/10
Nm/lb.in.
FC
Mounting force
(IXFX)
20..120 /4.5..27
N/lb
Weight
(IXFK)
(IXFX)
10
6
g
g
G
D
(TAB)
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
1100
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
© 2008 IXYS CORPORATION, All rights reserved
V
Applications:
z
TJ = 125°C
6.5
V
± 200
nA
50
2.5
μA
mA
360
mΩ
Easy to mount
Space savings
High power density
z
z
z
z
High Voltage Switched-mode and
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
DS99855B(04/08)
IXFK30N110P
IXFX30N110P
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS= 20V, ID = 0.5 • ID25, Note 1
15
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
TO-264 (IXFK) Outline
25
S
13.6
nF
795
pF
70
pF
1.50
Ω
50
ns
RGI
Gate Input Resistance
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
48
ns
td(off)
RG = 1Ω (External)
83
ns
52
ns
235
nC
tf
Qg(on)
Qgs
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
102
nC
79
nC
0.13 °C/W
RthJC
RthCS
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0V
ISM
VSD
trr
QRM
IRM
°C/W
0.15
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
30
A
Repetitive, pulse width limited by TJM
120
A
IF = IS, VGS = 0V, Note 1
1.5
V
300
ns
IF = 20A, -di/dt = 100 A/μs
VR = 100 V, VGS = 0V
1.8
μC
13
A
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
PLUS 247TM (IXFX) Outline
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFK30N110P
IXFX30N110P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
30
70
VGS = 10V
8V
VGS = 10V
60
25
ID - Amperes
ID - Amperes
50
20
15
7V
7V
40
30
10
20
5
6V
10
6V
5V
0
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
20
25
30
Fig. 4. RDS(on) Normalized to ID = 15A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
3.2
30
VGS = 10V
VGS = 10V
2.8
RDS(on) - Normalized
25
ID - Amperes
15
VDS - Volts
VDS - Volts
7V
20
15
10
6V
5
2.4
2
I D = 30A
I D = 15A
1.6
1.2
0.8
5V
0
0.4
0
5
10
15
20
25
-50
-25
0
VDS - Volts
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 15A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
35
2.6
VGS = 10V
2.4
TJ = 125ºC
30
25
2
ID - Amperes
RDS(on) - Normalized
2.2
1.8
1.6
1.4
TJ = 25ºC
20
15
10
1.2
5
1
0
0.8
0
5
10
15
20
25
30
35
40
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
45
50
55
60
65
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
125
150
IXFK30N110P
IXFX30N110P
Fig. 7. Input Admittance
Fig. 8. Transconductance
40
55
50
35
TJ = - 40ºC
45
40
g f s - Siemens
ID - Amperes
30
TJ = 125ºC
25ºC
- 40ºC
25
20
15
25ºC
35
30
25
125ºC
20
15
10
10
5
5
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
8.0
5
10
15
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
25
30
35
40
45
50
Fig. 10. Gate Charge
90
16
80
14
70
VDS = 550V
I D = 15A
I G = 10mA
12
60
VGS - Volts
IS - Amperes
20
ID - Amperes
50
40
10
8
6
30
TJ = 125ºC
TJ = 25ºC
20
4
2
10
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
50
VSD - Volts
100
150
200
250
300
350
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
1.000
10,000
Ciss
Z(th)JC - ºC / W
Capacitance - PicoFarads
f = 1 MHz
1,000
Coss
0.100
0.010
100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: F_30N110P(96) 04-01-08-A