IXFK30N110P IXFX30N110P PolarTM Power MOSFET HiPerFETTM VDSS ID25 = = 1100V 30A Ω 360mΩ 300ns RDS(on) ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 1100 1100 VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 30 75 A A IAR EAS TC = 25°C TC = 25°C 15 1.5 A J dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns PD TC = 25°C 960 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C z z TJ TJM Tstg V V TL TSOLD 1.6 mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque (IXFK) 1.13/10 Nm/lb.in. FC Mounting force (IXFX) 20..120 /4.5..27 N/lb Weight (IXFK) (IXFX) 10 6 g g G D (TAB) S PLUS247 (IXFX) (TAB) G = Gate S = Source D = Drain TAB = Drain Features z z Fast intrinsic diode International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1100 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V Applications: z TJ = 125°C 6.5 V ± 200 nA 50 2.5 μA mA 360 mΩ Easy to mount Space savings High power density z z z z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99855B(04/08) IXFK30N110P IXFX30N110P Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS= 20V, ID = 0.5 • ID25, Note 1 15 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss TO-264 (IXFK) Outline 25 S 13.6 nF 795 pF 70 pF 1.50 Ω 50 ns RGI Gate Input Resistance td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 48 ns td(off) RG = 1Ω (External) 83 ns 52 ns 235 nC tf Qg(on) Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 102 nC 79 nC 0.13 °C/W RthJC RthCS Source-Drain Diode Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM °C/W 0.15 Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. 30 A Repetitive, pulse width limited by TJM 120 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100 A/μs VR = 100 V, VGS = 0V 1.8 μC 13 A Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 PLUS 247TM (IXFX) Outline Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) Dim. A A1 A2 b b1 b2 C D E e L L1 Q Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFK30N110P IXFX30N110P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 30 70 VGS = 10V 8V VGS = 10V 60 25 ID - Amperes ID - Amperes 50 20 15 7V 7V 40 30 10 20 5 6V 10 6V 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 20 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 30 VGS = 10V VGS = 10V 2.8 RDS(on) - Normalized 25 ID - Amperes 15 VDS - Volts VDS - Volts 7V 20 15 10 6V 5 2.4 2 I D = 30A I D = 15A 1.6 1.2 0.8 5V 0 0.4 0 5 10 15 20 25 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 35 2.6 VGS = 10V 2.4 TJ = 125ºC 30 25 2 ID - Amperes RDS(on) - Normalized 2.2 1.8 1.6 1.4 TJ = 25ºC 20 15 10 1.2 5 1 0 0.8 0 5 10 15 20 25 30 35 40 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 45 50 55 60 65 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFK30N110P IXFX30N110P Fig. 7. Input Admittance Fig. 8. Transconductance 40 55 50 35 TJ = - 40ºC 45 40 g f s - Siemens ID - Amperes 30 TJ = 125ºC 25ºC - 40ºC 25 20 15 25ºC 35 30 25 125ºC 20 15 10 10 5 5 0 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 5 10 15 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 45 50 Fig. 10. Gate Charge 90 16 80 14 70 VDS = 550V I D = 15A I G = 10mA 12 60 VGS - Volts IS - Amperes 20 ID - Amperes 50 40 10 8 6 30 TJ = 125ºC TJ = 25ºC 20 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 VSD - Volts 100 150 200 250 300 350 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 10,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 1,000 Coss 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_30N110P(96) 04-01-08-A