IXGH 40N120A2 IXGT 40N120A2 High Voltage IGBT Low VCE(sat) IXGH 40N120A2 IXGT 40N120A2 VCES = 1200 V IC25 = 75 A VCE(sat) ≤ 2.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCES TJ = 25°C to 150°C 1200 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C, IGBT chip capability 75 A IC110 TC = 110°C 40 A ICM TJ ≤ 150°C, tp < 300 μs 160 A SSOA VGE = 15 V, TVJ = 150°C, RG = 5 Ω ICM = 80 A (RBSOA) Clamped inductive load, VCE < 960 V PC TC = 25°C 360 W -55 ... +150 150 -55 ... +150 °C °C °C G TJ TJM Tstg TL TO-247 (IXFH) 300 °C TSOLD Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 seconds Plastic body for 10 seconds 260 °C Md Mounting torque (ixgh) 1.3/10 Weight (IXGH) (IXGT) 6.0 4.0 Nm/lb.in. C E (TAB) TO-268 (IXGT) G G = Gate E = Emitter E C (TAB) C = Collector TAb = Collector Features • International standard packages • Low VCE(sat) - for minimum on-state conduction g g • losses MOS Gate turn-on - drive simplicity Symbol Test Conditions (TJ = 25°C unless otherwise specified) VGE(th) IC = 1 mA, VGE = 0 V VGE(th) IC = 250 μA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = IC110, VGE = 15V © 2005 IXYS All rights reserved Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 μA TJ = 125°C 1mA ± 100 nA Applications • • • • • • AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Capacitor discharge 2.0 V DS99509 (12/05) IXGH 40N120A2 IXGT 40N120A2 Symbol Test Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. gfs IC = IC110, VCE = 10 V IC(ON) VGE = 10 V, VCE = 10 V Cies VCE = 25 V, VGE = 0 V, f = 1 MHz 40 S 195 A 3150 pF Coes 165 pF Cres 70 pF 136 nC Qge 19 nC Qgc 54 nC 22 ns 41 ns Qg 28 IC = IC110, VGE = 15 V, VCE = 0.5 VCES td(on) Inductive load, TJ = 25°C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = 2 Ω tri td(off) tfi Eoff td(on) Inductive load, TJ = 125°C IC = IC110, VGE = 15 V VCE = 0.8 VCES, RG = 2 Ω tri Eon td(off) tfi Eoff 420 800 ns 800 1200 ns 15 25 mJ 19 ns 36 ns 3.5 mJ 730 ns 1570 ns 35 mJ RthJC RthCS TO-247 AD Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (IXGT) 0.35 K/W (TO-247) 0.25 K/W Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % TO-268: Min. Recommended Footprint PRELIMINARY TECHNICAL INFORMATION Terminals: 1 - Gate 3 - Source The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a subjective pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 2 - Drain Tab - Drain IXGH 40N120A2 IXGT 40N120A2 Fig. 1. Output Characteristics @ 25ºC Fig. 2. Exteded Output Characteristics @ 25ºC 300 80 VGE = 15V 13V 11V 70 VGE = 15V 13V 270 240 60 IC - Amperes IC - Amperes 210 9V 50 40 7V 30 11V 180 150 9V 120 90 20 60 10 7V 30 0 0 0 0.4 0.8 1.2 1.6 2 2.4 0 2.8 2 4 6 8 Fig. 3. Output Characteristics @ 125ºC 14 16 18 20 1.6 VGE = 15V 13V 11V 70 V GE = 15V 1.5 1.4 VCE(sat) - Normalized 60 IC - Amperes 12 Fig. 4. Dependence of VCE(sat) on Junction Temperature 80 9V 50 40 7V 30 20 I C = 80A 1.3 1.2 1.1 I C = 40A 1.0 0.9 I C = 20A 10 0.8 5V 0.7 0 0 0.5 1 1.5 2 2.5 -50 3 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade VCE - Volts Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig. 6. Input Admittance 6.0 200 TJ = 25ºC 5.5 180 5.0 TJ = - 40ºC 25ºC 125ºC 160 4.5 140 I C = 80A 40A 20A 4.0 IC - Amperes VCE - Volts 10 VCE - Volts VCE - Volts 3.5 3.0 120 100 80 2.5 60 2.0 40 1.5 20 1.0 0 5 6 7 8 9 10 VGE - Volts © 2005 IXYS All rights reserved 11 12 13 14 15 4.5 5.5 6.5 7.5 VGE - Volts 8.5 9.5 10.5 IXGH 40N120A2 IXGT 40N120A2 Fig. 8. Inductive Turn-off Switching Times vs. Gate Resistance Fig. 7. Transconductance 55 2000 TJ = 125ºC, VGE = 15V 1000 VCE = 960V t f - Nanoseconds 35 TJ = - 40ºC 25ºC 125ºC 30 25 20 1800 900 1700 800 I C = 40A 1600 700 1500 15 10 600 I C = 20A, 80A 1400 t d(off) - Nanoseconds 40 g f s - Siemens I C = 20A, 80A 1900 45 1100 td(off) - - - - tf 50 500 5 0 1300 0 30 60 90 120 150 180 210 400 2 3 4 5 Fig. 9. Inductive Turn-off Switching Times vs. Collector Current 2000 1800 900 td(off) - - - - RG = 2Ω , VGE = 15V 1800 1400 700 VCE = 960V 1200 600 500 TJ = 25ºC 800 600 50 60 70 t f - Nanoseconds t f - Nanoseconds RG = 2Ω , VGE = 15V 1600 800 I C = 20A, 40A, 80A 1400 1200 600 I C = 80A, 20A 1000 400 800 300 600 80 25 35 45 90 45 75 40 I C = 40A 60 35 45 30 30 25 I C = 20A 15 0 3 4 5 6 95 105 115 300 125 7 8 9 10 25 90 RG = 2Ω , VGE = 15V 24 80 VCE = 960V 23 70 22 60 21 TJ = 25ºC 50 20 40 19 30 18 20 20 15 10 17 TJ = 125ºC 16 20 RG - Ohms IXYS reserves the right to change limits, test conditions and dimensions. 30 40 50 I C - Amperes 60 70 80 t d(on) - Nanoseconds 50 t r - Nanoseconds 55 I C = 80A 2 85 td(on) - - - - tr 60 105 75 100 t d(on) - Nanoseconds t r - Nanoseconds 120 65 Fig. 12. Inductive Turn-on Switching Times vs. Collector Current 65 td(on) - - - - TJ = 125ºC, VGE = 15V 55 TJ - Degrees Centigrade Fig. 11. Inductive Turn-on Switching Times vs. Gate Resistance VCE = 960V 500 400 I C - Amperes 135 700 t d(off) - Nanoseconds 800 t d(off) - Nanoseconds td(off) - - - - tf tr 900 VCE = 960V 1600 150 10 1000 TJ = 125ºC 40 9 2000 tf 30 8 Fig. 10. Inductive Turn-off Switching Times vs. Junction Temperature 1000 20 7 RG - Ohms IC - Amperes 1000 6 IXGH 40N120A2 IXGT 40N120A2 Fig. 13. Inductive Turn-on Switching Times vs. Junction Temperature 110 16 25 100 24 I C = 80A I C = 40A 23 22 RG = 2Ω , VGE = 15V 70 21 VCE = 960V 60 20 I C = 40A 19 40 18 30 17 20 t d(on) - Nanoseconds td(on) - - - - tr 80 50 V CE = 600V 14 I G = 10 mA 12 VGE - Volts 90 t r - Nanoseconds Fig. 14. Gate Charge 10 8 6 4 2 16 I C = 20A 10 25 35 45 55 65 75 85 95 105 115 0 15 125 0 20 40 TJ - Degrees Centigrade 60 80 100 120 140 QG - NanoCoulombs Fig. 15. Capacitance Fig. 16. Reverse-Bias Safe Operating Area 10,000 90 f = 1 MHz 70 C ies 1,000 IC - Amperes Capacitance - PicoFarads 80 C oes 60 50 40 30 100 TJ = 125ºC 20 C res RG = 5Ω dV / dT < 10V / ns 10 0 10 0 5 10 15 20 25 30 35 40 200 300 400 500 600 700 800 900 1000 1100 1200 VCE - Volts VCE - Volts Fig. 17. Maximum Transient Thermal Resistance R(th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 Pulse Width - Seconds © 2005 IXYS All rights reserved 0.1 1 10