IXYS IXGT40N120A2

IXGH 40N120A2
IXGT 40N120A2
High Voltage IGBT
Low VCE(sat)
IXGH 40N120A2
IXGT 40N120A2
VCES = 1200 V
IC25 = 75 A
VCE(sat) ≤ 2.0 V
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
1200
V
VCES
TJ = 25°C to 150°C
1200
V
VGES
Continuous
± 20
V
VGEM
Transient
± 30
V
IC25
TC = 25°C, IGBT chip capability
75
A
IC110
TC = 110°C
40
A
ICM
TJ ≤ 150°C, tp < 300 μs
160
A
SSOA
VGE = 15 V, TVJ = 150°C, RG = 5 Ω
ICM = 80
A
(RBSOA)
Clamped inductive load, VCE < 960 V
PC
TC = 25°C
360
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
TJ
TJM
Tstg
TL
TO-247 (IXFH)
300
°C
TSOLD
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
260
°C
Md
Mounting torque (ixgh)
1.3/10
Weight
(IXGH)
(IXGT)
6.0
4.0
Nm/lb.in.
C
E
(TAB)
TO-268 (IXGT)
G
G = Gate
E = Emitter
E
C (TAB)
C = Collector
TAb = Collector
Features
• International standard packages
• Low VCE(sat)
- for minimum on-state conduction
g
g
•
losses
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions
(TJ = 25°C unless otherwise specified)
VGE(th)
IC = 1 mA, VGE = 0 V
VGE(th)
IC = 250 μA, VCE = VGE
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = IC110, VGE = 15V
© 2005 IXYS All rights reserved
Characteristic Values
Min. Typ. Max.
1200
V
3.0
5.0 V
50 μA
TJ = 125°C
1mA
± 100 nA
Applications
•
•
•
•
•
•
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
2.0 V
DS99509 (12/05)
IXGH 40N120A2
IXGT 40N120A2
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
gfs
IC = IC110, VCE = 10 V
IC(ON)
VGE = 10 V, VCE = 10 V
Cies
VCE = 25 V, VGE = 0 V, f = 1 MHz
40
S
195
A
3150
pF
Coes
165
pF
Cres
70
pF
136
nC
Qge
19
nC
Qgc
54
nC
22
ns
41
ns
Qg
28
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
td(on)
Inductive load, TJ = 25°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = 2 Ω
tri
td(off)
tfi
Eoff
td(on)
Inductive load, TJ = 125°C
IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = 2 Ω
tri
Eon
td(off)
tfi
Eoff
420
800
ns
800
1200
ns
15
25
mJ
19
ns
36
ns
3.5
mJ
730
ns
1570
ns
35
mJ
RthJC
RthCS
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline (IXGT)
0.35 K/W
(TO-247)
0.25
K/W
Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %
TO-268: Min. Recommended Footprint
PRELIMINARY TECHNICAL
INFORMATION
Terminals: 1 - Gate
3 - Source
The product presented herein is under
development. The Technical Specifications
offered are derived from data gathered
during objective characterizations of
preliminary engineering lots; but also may
yet contain some information supplied during
a subjective pre-production design evaluation. IXYS reserves the right to change
limits, test conditions, and dimensions
without notice.
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
2 - Drain
Tab - Drain
IXGH 40N120A2
IXGT 40N120A2
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Exteded Output Characteristics
@ 25ºC
300
80
VGE = 15V
13V
11V
70
VGE = 15V
13V
270
240
60
IC - Amperes
IC - Amperes
210
9V
50
40
7V
30
11V
180
150
9V
120
90
20
60
10
7V
30
0
0
0
0.4
0.8
1.2
1.6
2
2.4
0
2.8
2
4
6
8
Fig. 3. Output Characteristics
@ 125ºC
14
16
18
20
1.6
VGE = 15V
13V
11V
70
V GE = 15V
1.5
1.4
VCE(sat) - Normalized
60
IC - Amperes
12
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
80
9V
50
40
7V
30
20
I C = 80A
1.3
1.2
1.1
I C = 40A
1.0
0.9
I C = 20A
10
0.8
5V
0.7
0
0
0.5
1
1.5
2
2.5
-50
3
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
6.0
200
TJ = 25ºC
5.5
180
5.0
TJ = - 40ºC
25ºC
125ºC
160
4.5
140
I C = 80A
40A
20A
4.0
IC - Amperes
VCE - Volts
10
VCE - Volts
VCE - Volts
3.5
3.0
120
100
80
2.5
60
2.0
40
1.5
20
1.0
0
5
6
7
8
9
10
VGE - Volts
© 2005 IXYS All rights reserved
11
12
13
14
15
4.5
5.5
6.5
7.5
VGE - Volts
8.5
9.5
10.5
IXGH 40N120A2
IXGT 40N120A2
Fig. 8. Inductive Turn-off Switching Times vs.
Gate Resistance
Fig. 7. Transconductance
55
2000
TJ = 125ºC, VGE = 15V
1000
VCE = 960V
t f - Nanoseconds
35
TJ = - 40ºC
25ºC
125ºC
30
25
20
1800
900
1700
800
I C = 40A
1600
700
1500
15
10
600
I C = 20A, 80A
1400
t d(off) - Nanoseconds
40
g f s - Siemens
I C = 20A, 80A
1900
45
1100
td(off) - - - -
tf
50
500
5
0
1300
0
30
60
90
120
150
180
210
400
2
3
4
5
Fig. 9. Inductive Turn-off Switching Times vs.
Collector Current
2000
1800
900
td(off) - - - -
RG = 2Ω , VGE = 15V
1800
1400
700
VCE = 960V
1200
600
500
TJ = 25ºC
800
600
50
60
70
t f - Nanoseconds
t f - Nanoseconds
RG = 2Ω , VGE = 15V
1600
800
I C = 20A, 40A, 80A
1400
1200
600
I C = 80A, 20A
1000
400
800
300
600
80
25
35
45
90
45
75
40
I C = 40A
60
35
45
30
30
25
I C = 20A
15
0
3
4
5
6
95
105
115
300
125
7
8
9
10
25
90
RG = 2Ω , VGE = 15V
24
80
VCE = 960V
23
70
22
60
21
TJ = 25ºC
50
20
40
19
30
18
20
20
15
10
17
TJ = 125ºC
16
20
RG - Ohms
IXYS reserves the right to change limits, test conditions and dimensions.
30
40
50
I C - Amperes
60
70
80
t d(on) - Nanoseconds
50
t r - Nanoseconds
55
I C = 80A
2
85
td(on) - - - -
tr
60
105
75
100
t d(on) - Nanoseconds
t r - Nanoseconds
120
65
Fig. 12. Inductive Turn-on Switching Times vs.
Collector Current
65
td(on) - - - -
TJ = 125ºC, VGE = 15V
55
TJ - Degrees Centigrade
Fig. 11. Inductive Turn-on Switching Times vs.
Gate Resistance
VCE = 960V
500
400
I C - Amperes
135
700
t d(off) - Nanoseconds
800
t d(off) - Nanoseconds
td(off) - - - -
tf
tr
900
VCE = 960V
1600
150
10
1000
TJ = 125ºC
40
9
2000
tf
30
8
Fig. 10. Inductive Turn-off Switching Times vs.
Junction Temperature
1000
20
7
RG - Ohms
IC - Amperes
1000
6
IXGH 40N120A2
IXGT 40N120A2
Fig. 13. Inductive Turn-on Switching Times vs.
Junction Temperature
110
16
25
100
24
I C = 80A
I C = 40A
23
22
RG = 2Ω , VGE = 15V
70
21
VCE = 960V
60
20
I C = 40A
19
40
18
30
17
20
t d(on) - Nanoseconds
td(on) - - - -
tr
80
50
V CE = 600V
14
I G = 10 mA
12
VGE - Volts
90
t r - Nanoseconds
Fig. 14. Gate Charge
10
8
6
4
2
16
I C = 20A
10
25
35
45
55
65
75
85
95
105
115
0
15
125
0
20
40
TJ - Degrees Centigrade
60
80
100
120
140
QG - NanoCoulombs
Fig. 15. Capacitance
Fig. 16. Reverse-Bias Safe Operating Area
10,000
90
f = 1 MHz
70
C ies
1,000
IC - Amperes
Capacitance - PicoFarads
80
C oes
60
50
40
30
100
TJ = 125ºC
20
C res
RG = 5Ω
dV / dT < 10V / ns
10
0
10
0
5
10
15
20
25
30
35
40
200
300
400
500
600
700
800
900
1000 1100 1200
VCE - Volts
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
R(th)JC - ºC / W
1.00
0.10
0.01
0.0001
0.001
0.01
Pulse Width - Seconds
© 2005 IXYS All rights reserved
0.1
1
10