IXTQ 23N60Q Power MOSFETs VDSS ID25 Q-Class = = = RDS(on) 600 V 23 A 0.32 Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Gate Charge and Capacitances Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±30 ±40 V V ID25 TC = 25°C 23 A IDM TC = 25°C, pulse width limited by TJM 92 A IAR TC = 25°C 23 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.5 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C TJ ≤ 150°C, RG = 2 Ω PD TC = 25°C TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Nm/lb.in. Weight 6 Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. VDSS VGS = 0 V, ID = 250 µA 600 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2003 IXYS All rights reserved g TJ = 25°C TJ = 125°C V 4.5 V ±100 nA 25 1 µA mA 0.32 Ω TO-3P (IXTQ) G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z IXYS advanced low gate charge process z International standard package z Low gate charge and capacitance - easier to drive - faster switching z Low RDS (on) z Unclamped Inductive Switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density DS99080(08/03) IXTQ 23N60Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 10 20 S 3300 pF 410 pF C rss 130 pF td(on) 20 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 20 ns td(off) RG = 1.5 Ω (External) 45 ns tf 20 ns Qg(on) 90 nC 20 nC 45 nC Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC 0.31 0.25 RthCK Source-Drain Diode TO-3P Outline K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 23 A ISM Repetitive; pulse width limited by TJM 92 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 500 ns IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXTQ 23N60Q Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extende d Output Characte ris tics @ 25 deg. C 25 50 VGS = 10V 7V VGS = 10V 40 6V I D - Amperes I D - Amperes 20 15 10 5V 5 7V 30 6V 20 10 5V 0 0 0 2 4 6 8 10 0 5 10 Fig. 3. Output Characteris tics @ 125 Deg. C 25 30 V GS = 10V 2.8 R D S (on) - Normalized I D - Amperes 25 3.1 6V 15 5V 10 20 Fig. 4. RDS(on) Norm alized to ID25 Value vs . Junction Tem perature VGS = 10V 7V 20 15 V D S - Volts V D S - Volts 5 2.5 2.2 1.9 I D = 23A 1.6 I D = 11.5A 1.3 1 0.7 0 0.4 0 5 10 15 20 25 -50 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID25 Value vs . ID Fig. 6. Drain Curre nt vs. Case Tem pe rature 25 3.1 VGS = 10V 2.8 TJ = 125ºC I D - Amperes R D S (on) - Normalized 20 2.5 2.2 1.9 1.6 15 10 1.3 5 TJ = 25ºC 1 0.7 0 0 10 20 30 I D - Amperes © 2003 IXYS All rights reserved 40 50 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTQ 23N60Q Fig. 8. Trans conductance Fig. 7. Input Adm ittance 50 35 30 40 TJ = -40ºC 25ºC 125ºC g f s - Siemens I D - Amperes 25 20 15 10 TJ = 125ºC 25ºC -40ºC 5 30 20 10 0 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 V G S - Volts 30 40 50 60 I D - Amperes Fig. 9. Source Curre nt vs. Source-ToDrain Voltage Fig. 10. Gate Charge 10 70 VDS = 300V I D = 11.5A I G = 10mA 60 8 VG S - Volts I S - Amperes 50 40 TJ = 125ºC 30 20 6 4 TJ = 25ºC 2 10 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 1.1 20 40 60 80 100 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Re sis tance Fig. 11. Capacitance 10000 1 C iss R (th) J C - (ºC/W) Capacitance - pF f = 1MHz 1000 C oss 0.1 C rss 100 0.01 0 5 10 15 20 25 30 35 40 V DS - Volts 1 10 100 1000 Pulse Width - milliseconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343