SEMICONDUCTOR KU310N10D TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications A C K D L B FEATURES H ・VDSS= 100V, ID= 27A J ・Drain-Source ON Resistance : MAXIMUM RATING (Tc=25℃) 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V @TC=25℃ Drain Current @TC=100℃ ID 17 EAS 60 mJ EAR 2.3 mJ dv/dt 4.5 V/ns 52 W 0.42 W/℃ Tj 150 ℃ Tstg -55 ~ 150 ℃ Thermal Resistance, Junction-to-Case RthJC 2.4 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 110 ℃/W Drain Power Dissipation Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range 2 M 3 1. GATE 2. DRAIN 3. SOURCE A 110* Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) F DPAK (1) 27 IDP Pulsed (Note1) N F RDS(ON)=31mΩ(Max.) @VGS = 10V CHARACTERISTIC E G DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N Thermal Characteristics * : Drain current limited by maximum junction temperature. PIN CONNECTION D G S 2011. 1. 21 Revision No : 0 1/7 KU310N10D ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V ID=5mA, Referenced to 25℃ - 0.10 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA RDS(ON) VGS=10V, ID=13.5A - 25 31 mΩ - 49 - - 10 - - 14 - - 30 - - 32 - - 115 - Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=80V, ID=34A VGS=10V (Note4,5) VDD=50V ID=34A RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 40 - Input Capacitance Ciss - 2230 - Output Capacitance Coss - 170 - Reverse Transfer Capacitance Crss - 85 - - - 34 - - 136 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=13.5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=34A, VGS=0V, - 53 - ns Reverse Recovery Charge Qrr dIs/dt=300A/μs - 0.11 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =35μH, IS=34A, VDD=80V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤34A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KU 310N10P 001 2011. 1. 21 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/7 KU310N10D Fig1. ID - VDS Fig2. ID - VGS 103 Drain Current ID (A) Drain Current ID (A) 103 VGS=7V, 10V 102 VGS=5V VGS=4.5V 101 100 10-1 100 101 VDS = 10V 102 100 C 25 C 101 100 102 2 3 4 3.0 1.3 VGS = 0V IDS = 5mA 1.1 1.0 0.9 0 100 50 150 2.5 2.0 1.5 1.0 0.5 0 -50 200 0 50 150 200 Fig6. IS - VSD - ௗ 103 102 Reverse Drain Current IS (A) Reverse Drain Current IS (A) 100 Drain Current ID (A) Fig5. IS - VSD - 102 100 C 25 C 101 0.6 0.8 1.0 1.2 1.4 1.6 Source - Drain Voltage VSD (V) 2011. 1. 21 8 VGS=10V ID=17A Junction Temperature Tj ( C ) 100 0.4 7 Fig4. RDS(ON) - ID Normalized On Resistance Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj 0.8 -50 6 Gate - Source Voltage VGS (V) Drain - Source Voltage VDS (V) 1.2 5 Revision No : 0 1.8 2.0 VGS=7V, 10V VGS=4V VGS=3V 101 VGS=0V VGS=2V 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 3/7 KU310N10D Fig7. RDS(ON) - ID Fig8. ID- Tj 40 35 Drain Current ID (A) On - Resistance RDS(ON) (mΩ) 80 60 40 VGS=4.5V VGS=5V VGS=10V 20 30 25 20 15 10 5 0 0 0 10 20 30 40 50 60 0 70 25 75 100 125 150 175 Junction Temperature Tj ( ) Drain Current ID (A) Fig 9. C - VDS Fig10. Qg- VGS 104 103 Coss 102 Crss Frequency=1MHz, VGS=0V 101 0 10 20 30 40 Gate - Source Voltage VGS (V) 12 Ciss Capacitance (pF) 50 VDS=80V 10 8 6 4 2 0 0 10 20 30 40 50 60 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Fig11. Safe Operation Area 103 Operation in this Drain Current ID (A) area is limited by RDS(ON) 102 10us 100us 1ms 101 10ms 100 10 -1 DC Tc= 25 C Single nonrepetitive pulse 10-1 100 101 102 103 Drain - Source Voltage VDS (V) 2011. 1. 21 Revision No : 0 4/7 KU310N10D Normalized Transient Thermal Resistance Fig12. Transient Thermal Response Curve 101 Duty=0.5 100 0.2 PDM 0.1 0.05 10-1 t1 0.02 0.01 t2 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2011. 1. 21 Revision No : 0 5/7 KU310N10D Fig13. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig14. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.8źVDSS 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig15. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2011. 1. 21 VGS Revision No : 0 td(on) ton tr td(off) tf toff 6/7 KU310N10D Fig16. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.8 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2011. 1. 21 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7