Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc Drain – Gate Voltage VDG 35 60 90 Vdc Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) 1 2 VGS VGSM ± 20 ± 40 ID IDM 2.0 3.0 Vdc Vpk CASE 29–05, STYLE 22 TO–92 (TO–226AE) Adc Total Device Dissipation @ TA = 25°C Derate above 25°C 3 PD Operating and Storage Junction Temperature Range Thermal Resistance 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to 150 °C θJA 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 35 60 90 — — — — — — IGSS — — 50 nAdc IDSS — — 10 µAdc VGS(Th) 1.0 — 3.5 Vdc MPF930 MPF960 MPF990 — — — 0.4 0.6 0.6 0.7 0.8 1.2 (ID = 1.0 Adc) MPF930 MPF960 MPF990 — — — 0.9 1.2 1.2 1.4 1.7 2.4 (ID = 2.0 Adc) MPF930 MPF960 MPF990 — — — 2.2 2.8 2.8 3.0 3.5 4.8 OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) V(BR)DSX MPF930 MPF960 MPF990 Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Vdc ON CHARACTERISTICS(2) Zero–Gate–Voltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 0.5 Adc) VDS(on) Vdc 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. v v REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit — — — 0.9 1.2 1.2 1.4 1.7 2.0 ID(on) 1.0 2.0 — Amps Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 70 — pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss — 20 — pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss — 49 — pF gfs 200 380 — mmhos Turn–On Time ton — 7.0 15 ns Turn–Off Time toff — 7.0 15 ns ON CHARACTERISTICS(2) (Continued) Static Drain–Source On Resistance (VGS = 10 Vdc, ID = 1.0 Adc) Ω rDS(on) MPF930 MPF960 MPF990 On–State Drain Current (VDS = 25 Vdc, VGS = 10 Vdc) SMALL– SIGNAL CHARACTERISTICS Forward Transconductance (VDS = 25 Vdc, ID = 0.5 Adc) SWITCHING CHARACTERISTICS 2. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. RESISTIVE SWITCHING +25 V TO SAMPLING SCOPE 50 Ω INPUT 23 PULSE GENERATOR 20 dB 50 Ω ATTENUATOR Vin 40 pF 50 50 1.0 M ton Vout toff 90% 90% OUTPUT V INVERTED out 10% 90% 10 V INPUT Figure 1. Switching Test Circuit 2 Vin 50% 10% PULSE WIDTH 50% Figure 2. Switching Waveforms Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 10 180 5.0 VGS = 0 V 160 VGS = 10 V C, CAPACITANCE (pF) V DS , DRAIN–SOURCE VOLTAGE (VOLTS) 2.0 1.0 0.5 140 Coss 120 100 80 Ciss 60 40 0.2 Crss 20 0.1 –55 –35 –15 85 105 +5.0 25 45 65 TJ, JUNCTION TEMPERATURE (°C) 125 0 145 0 5.0 Figure 3. On Voltage versus Temperature 10 20 30 40 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 50 Figure 4. Capacitance Variation 2.4 2.8 ID(on), DRAIN CURRENT (AMPS) ID(on), DRAIN CURRENT (AMPS) VGS = 10 V 2.1 VDS = 10 V 1.8 1.5 1.2 0.9 0.6 2.4 9.0 V 2.0 1.6 7.0 V 1.2 6.0 V 0.8 5.0 V 0.3 0.4 0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE – SOURCE VOLTAGE (VOLTS) 9.0 10 8.0 V 4.0 V 0 5.0 Figure 5. Transfer Characteristic ID(on), DRAIN CURRENT (AMPS) 2.8 10 20 30 40 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 50 Figure 6. Output Characteristic VGS = 10 V 2.4 9.0 V 2.0 8.0 V 1.6 7.0 V 1.2 6.0 V 0.8 5.0 V 0.4 0.2 4.0 V 3.0 V 0 0.5 1.0 2.0 3.0 4.0 VDS, DRAIN – SOURCE VOLTAGE (VOLTS) 5.0 Figure 7. Saturation Characteristic Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 SECTION X–X N C N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN Motorola reserves the right to make changes without further notice to any products herein. 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