FREESCALE MRF183LSR1

ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
MOTOROLA
Order this document
by MRF183/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power
Field Effect Transistors
MRF183R1
MRF183LSR1
N - Channel Enhancement - Mode Lateral
MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large - signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 11.5 dB
Efficiency — 33%
IMD — - 28 dBc
1.0 GHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
D
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
Impedance Parameters
CASE 360B - 05, STYLE 1
NI - 360
MRF183R1
• S - Parameter Characterization at High Bias Levels
ARCHIVED 2005
• 100% Tested for Load Mismatch Stress at all Phase Angles
with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW
• In Tape and Reel. R1 Suffix = 500 Units per
32 mm, 13 inch Reel.
G
CASE 360C - 05, STYLE 1
NI - 360S
MRF183LSR1
S
MAXIMUM RATINGS
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
65
Vdc
Drain- Gate Voltage (RGS = 1 Meg Ohm)
VDGR
65
Vdc
VGS
± 20
Vdc
Drain Current - Continuous
ID
5
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70°C
PD
86
0.67
W
W/°C
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
1.5
°C/W
Gate - Source Voltage
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 15
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
MRF183R1 MRF183LSR1
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 50 mAdc)
BVDSS
65
-
-
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
-
-
1
µAdc
Gate - Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
-
-
1
µAdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 250 mAdc)
VGS(Q)
3
-
5
Vdc
Drain- Source On - Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
-
0.7
-
Vdc
gfs
-
2
-
S
Input Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Ciss
-
82
-
pF
Output Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Coss
-
38
-
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0, f = 1 MHz)
Crss
-
4.5
-
pF
Gps
11.5
13.5
-
dB
η
33
38
-
%
3rd Order Intermodulation Distortion
IMD
-
- 32
- 28
dBc
Input Return Loss
IRL
9
14
-
dB
13
-
dB
OFF CHARACTERISTICS
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 5 Adc)
ARCHIVED 2005
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA)
Two - Tone Common Source Amplifier Power Gain
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA)
Two - Tone Common Source Amplifier Power Gain
Two - Tone Drain Efficiency
Gps
-
η
-
35
-
%
3rd Order Intermodulation Distortion
IMD
-
- 32
-
dBc
Input Return Loss
IRL
-
12
-
dB
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA,
f = 945 MHz, VSWR 5:1 at All Phase Angles)
MRF183R1 MRF183LSR1
2
Ψ
No Degradation in Output Power
Before and After Test
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
VGG
R1
B1
R2
+
C1
B2
C2
R3
C3
C4
C13
L1
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C6
ARCHIVED 2005
B1
B2
C1
C2, C14
C3
C4, C13
C5, C12
C6, C11
C7, C8
C9, C10
C15
C16
L1, L2
R1
R2
C9
Z6
+
VDD
C16
L2
Z7
C7
Short Ferrite Bead
Long Ferrite Bead
10 µF, 50 V Electrolytic Capacitor
0.1 µF Chip Capacitor
1000 pF Chip Capacitor
47 pf Chip Capacitor
47 pF Chip Capacitor
0.8 - 8.0 pF Trim Capacitor
10 pF Chip Capacitor
10 pF Chip Capacitor
100 pF Chip Capacitor
250 µF, 50 V Electrolytic Capacitor
5 Turns, 24 AWG, ID 0.059″
120 Ω, 1/4 W Carbon
18 kΩ, 1/4 W Carbon
C15
DUT
C8
C5
C14
Z8
Z9
C10
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Board
RF
OUTPUT
C12
Z10
Z11
C11
4.7 MΩ, 1/4 W Carbon
T - Line, 0.200″ x 0.080″
T - Line, 0.570″ x 0.120″
T - Line, 0.610″ x 0.320″
T - Line, 0.160″ x 0.320″ x 0.620″
Tapered Line
T - Line, 0.650″ x 0.620″
T - Line, 0.020″ x 0.620″
T - Line, 0.270″ x 0.320″
T - Line, 0.130″ x 0.320″
T - Line, 0.370″ x 0.080″
T - Line, 1.050″ x 0.080″
T - Line, 0.290″ x 0.080″
0.030″ Glass Teflon, εr = 2.55
ARLON - GX - 0300 - 55 - 22
Figure 1. MRF183LSR1 Two Tone Test Circuit Schematic
MOTOROLA RF DEVICE DATA
MRF183R1 MRF183LSR1
3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
−25
VDD = 28 Vdc
IDQ = 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
−30
−35
3rd ORDER
−20
−25
IDQ = 75 mA
−30
−40
−35
5th
−45
150 mA
−40
−50
−55
−45
7th
−60
250 mA
−50
−65
−70
0
5
10
15
20
25
30
35
40
Pout, OUTPUT POWER (WATTS) PEP
45
50
−55
0.1
Figure 2. Intermodulation Distortion Products
versus Output Power
285 mA
15
150 mA
14
13.5
Pout , OUTPUT POWER (WATTS)
Gpe , POWER GAIN (dB)
VDD = 28 Vdc
f = 945 MHz
IDQ = 450 mA
14.5
75 mA
1
10
Pout, OUTPUT POWER (WATTS)
15
50
Gpe
40
14
30
13
Pout
12
20
VDD = 28 Vdc
IDQ = 75 mA
f = 945 MHz
10
0
100
16
0
Figure 4. Power Gain versus Output Power
0.5
1
2
2.5
1.5
3
Pin, INPUT POWER (WATTS)
11
3.5
4
10
Figure 5. Output Power versus Input Power
90
50
Pin = 4.0 W
80
P out , OUTPUT POWER (WATTS)
P out , OUTPUT POWER (WATTS)
ARCHIVED 2005
100
60
15.5
70
2.0 W
60
50
40
1.0 W
30
20
VDD = 28 Vdc
IDQ = 75 mA
f1 = 945 MHz
10
0
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Intermodulation Distortion versus
Output Power
16
13
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
450 mA
Gpe , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−20
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
15
17
19
21
23
25
27
29
VDS, DRAIN VOLTAGE (VOLTS)
31
33
Figure 6. Output Power versus Drain Bias
Supply Voltage
MRF183R1 MRF183LSR1
4
45
40
35
30
TYPICAL DEVICE SHOWN
VGS(th) TYPICAL = 3.13 V
25
20
15
VDD = 28 Vdc
Pin = 1.5 W
f1 = 945 MHz
10
5
35
0
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE BIAS (VOLTS)
4
4.5
5
Figure 7. Output Power versus Gate Bias
Supply Voltage
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
4000
3500
50
I D, DRAIN CURRENT (mA)
P out , OUTPUT POWER (WATTS)
60
3000
Pin = 2.0 W
40
2500
30
TYPICAL DEVICE SHOWN
2000
1.0 W
1500
20
0
800
820
840
1000
0.5 W
VDD = 28 Vdc
IDQ = 75 mA
SINGLE TONE
10
0.1 W
860
880 900 920 940
f, FREQUENCY (MHz)
960
VDS = 28 Vdc
500
0
980 1000
0
Figure 8. Output Power versus Frequency
4
Ciss
80
60
40
Coss
VGS = 0 Vdc
f = 1.0 MHz
20
6
5
10
20
30
15
25
35
40
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
50
45
ID = 3.67 A
3.5
TCASE = 70°C
3
2.5
TCASE = 100°C
2
1.5
1
0.5
Crss
0
I D, DRAIN CURRENT (AMPS)
C, CAPACITANCE (pF)
5
4.5
100
0
TJ = 175°C
0
Figure 10. Capacitance versus Voltage
5
15
25
10
20
30
VDS, DRAIN VOLTAGE (VOLTS)
35
40
Figure 11. Class A Safe Operating Region
60
50
P out , OUTPUT POWER (dBm)
ARCHIVED 2005
2
4
3
VGS, GATE VOLTAGE (VOLTS)
Figure 9. Drain Current versus Gate Voltage
120
0
1
40
FUNDAMENTAL
30
20
10
0
3rd ORDER
−10
VDS = 26 Vdc
ID = 1.8 A
f1 = 945 MHz
f2 = 945.1 MHz
−20
−30
−40
10
15
20
25
30
Pin, INPUT POWER (dBm)
35
40
Figure 12. Class A Third Order Intercept Point
MOTOROLA RF DEVICE DATA
MRF183R1 MRF183LSR1
5
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
G T, GAIN (dB)
η
11
35
10
−30
9
−31
IMD
8
−32
7
−33
VSWR
6
925
930
935
940
945
950
f, FREQUENCY (MHz)
955
960
−34
965
3.00
40
12
2.00
GAIN
INPUT VSWR
13
1.00
45
INTERMODULATION
DISTORTION (dBc)
14
η, EFFICIENCY (%)
TYPICAL CHARACTERISTICS
Figure 13. Broadband Power Performance of
MRF183LSR1
ARCHIVED 2005
C1
TO GATE
BIAS
FEEDTHRU
R2
R1
C2
B1
C3
C4
IND1
B2
C14 C15
C13
C8
TO DRAIN
BIAS
FEEDTHRU
C16
IND2
C9
C10
C5
C12
C7
C6
C11
MRF183S
Figure 14. MRF183LSR1 Two Tone Test Circuit Component Parts Layout
MRF183R1 MRF183LSR1
6
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Z0 = 10 Ω
f = 930 MHz
Zin
f = 960 MHz
f = 930 MHz
ARCHIVED 2005
ZOL*
f = 960 MHz
VDD = 28 V, IDQ = 250 mA, Pout = 45 W PEP
Zin
f
MHz
Zin
Ohms
ZOL*
Ohms
930
1.10 + j0.93
2.60 − j0.13
945
1.10 + j0.78
2.70 − j0.28
960
1.10 + j0.60
2.80 − j0.42
= Conjugate of source impedance.
ZOL* =
Conjugate of the load impedance at a given output
power, voltage, and current conditions.
Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and
intermodulation distortion.
Figure 15. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF183R1 MRF183LSR1
7
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 1. Typical Common Source S - Parameters (VDS = 13.5 V)
ARCHIVED 2005
ID = 1.5 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
20
0.954
- 157
29.58
100
0.017
11
0.778
- 161
30
0.941
- 164
19.73
96
0.017
8
0.796
- 168
40
0.922
- 168
14.84
93
0.017
4
0.804
- 170
50
0.907
- 171
11.94
91
0.017
3
0.808
- 172
60
0.903
- 172
9.75
89
0.017
2
0.812
- 173
70
0.899
- 173
8.34
88
0.017
0
0.814
- 174
80
0.898
- 174
7.29
86
0.017
-1
0.816
- 175
90
0.896
- 175
6.49
85
0.017
-2
0.816
- 175
100
0.897
- 175
5.83
84
0.017
-2
0.817
- 175
150
0.895
- 177
3.82
79
0.017
-6
0.822
- 176
200
0.898
- 178
2.84
74
0.016
-9
0.828
- 176
250
0.902
- 178
2.24
70
0.016
- 11
0.835
- 176
300
0.908
- 179
1.84
66
0.015
- 14
0.842
- 176
350
0.905
- 179
1.55
62
0.015
- 16
0.850
- 176
400
0.913
- 180
1.32
58
0.014
- 18
0.861
- 176
450
0.920
180
1.15
54
0.014
- 18
0.865
- 176
500
0.924
179
1.01
51
0.013
- 20
0.874
- 177
550
0.922
179
0.89
47
0.013
- 21
0.881
- 177
600
0.931
178
0.80
44
0.012
- 21
0.889
- 177
650
0.935
178
0.72
41
0.011
- 20
0.895
- 177
700
0.935
177
0.64
38
0.011
- 17
0.901
- 178
750
0.937
177
0.59
37
0.012
- 18
0.905
- 178
800
0.940
176
0.54
33
0.012
- 20
0.913
- 178
850
0.943
176
0.50
30
0.012
- 29
0.919
- 179
900
0.945
175
0.46
28
0.010
- 33
0.924
- 179
950
0.947
174
0.43
26
0.009
- 34
0.930
- 180
1000
0.947
174
0.40
24
0.008
- 29
0.935
180
1050
0.947
173
0.37
21
0.007
- 24
0.939
179
1100
0.952
172
0.35
19
0.007
- 19
0.944
179
1150
0.949
172
0.32
17
0.007
- 17
0.948
178
1200
0.946
171
0.30
14
0.006
- 16
0.948
177
1250
0.954
170
0.28
12
0.006
- 13
0.953
177
1300
0.952
170
0.27
9
0.006
- 12
0.950
176
1350
0.949
169
0.26
9
0.006
- 10
0.951
176
1400
0.948
168
0.23
8
0.005
-7
0.953
175
1450
0.948
168
0.22
6
0.004
4
0.948
174
1500
0.940
167
0.21
4
0.004
19
0.944
174
MRF183R1 MRF183LSR1
8
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 2. Typical Common Source S - Parameters (VDS = 28 V)
ARCHIVED 2005
ID = 1.5 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
20
0.968
- 132
45.79
113
0.014
24
0.579
- 145
30
0.953
- 145
31.75
106
0.015
17
0.623
- 157
40
0.921
- 154
24.33
99
0.015
12
0.648
- 161
50
0.904
- 159
19.68
95
0.015
7
0.661
- 164
60
0.898
- 163
16.11
92
0.015
5
0.670
- 166
70
0.890
- 165
13.79
90
0.015
2
0.677
- 167
80
0.886
- 167
12.06
87
0.015
1
0.681
- 168
90
0.886
- 168
10.71
86
0.015
-1
0.684
- 169
100
0.887
- 169
9.61
84
0.015
-3
0.688
- 169
150
0.886
- 172
6.26
76
0.015
-9
0.706
- 170
200
0.890
- 174
4.59
69
0.014
- 13
0.724
- 170
250
0.898
- 175
3.57
64
0.014
- 17
0.744
- 169
300
0.906
- 176
2.88
59
0.013
- 19
0.764
- 169
350
0.908
- 177
2.37
54
0.012
- 23
0.785
- 169
400
0.915
- 178
2.00
49
0.011
- 24
0.807
- 170
450
0.924
- 178
1.71
45
0.010
- 25
0.821
- 170
500
0.930
- 179
1.48
41
0.010
- 26
0.838
- 171
550
0.928
- 180
1.28
37
0.009
- 26
0.851
- 171
600
0.937
180
1.13
33
0.008
- 25
0.865
- 172
650
0.944
179
1.00
30
0.007
- 22
0.878
- 172
700
0.943
178
0.88
27
0.008
- 14
0.888
- 173
750
0.946
178
0.81
25
0.008
- 15
0.895
- 173
800
0.949
177
0.73
22
0.009
- 17
0.906
- 174
850
0.954
177
0.67
20
0.009
- 28
0.912
- 175
900
0.953
175
0.61
18
0.007
- 34
0.919
- 175
950
0.957
175
0.56
15
0.005
- 32
0.927
- 176
1000
0.957
174
0.51
13
0.004
- 22
0.934
- 177
1050
0.957
174
0.48
10
0.004
- 11
0.939
- 178
1100
0.962
173
0.45
8
0.004
-2
0.945
- 178
1150
0.959
172
0.41
7
0.004
3
0.950
- 179
1200
0.955
171
0.39
4
0.004
9
0.950
- 180
1250
0.962
170
0.36
2
0.004
13
0.955
180
1300
0.959
170
0.33
0
0.004
17
0.953
179
1350
0.956
169
0.31
-1
0.004
25
0.954
178
1400
0.954
168
0.29
-4
0.004
32
0.957
177
1450
0.955
168
0.28
-6
0.004
46
0.952
177
1500
0.948
167
0.26
-7
0.004
56
0.948
176
MOTOROLA RF DEVICE DATA
MRF183R1 MRF183LSR1
9
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005
NOTES
MRF183R1 MRF183LSR1
10
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
Q
aaa
2X
G
B
M
T A
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
1
3
B
R
2
(FLANGE)
2X
D
bbb M T A
2X
B
M
(LID)
K
ccc
T A
M
M
B
M
M
F
H
N
ccc
(LID)
T A
M
B
M
M
C
E
S
(INSULATOR)
aaa
T
M
bbb
(INSULATOR)
A
T A
M
M
B
CASE 360B - 05
ISSUE F
NI - 360
MRF183R1
M
A
A
A
1
2
B
(FLANGE)
2X
2X
D
bbb
M
T A
B
M
K
R
(LID)
ccc
M
M
T A
M
B
M
F
H
N
(LID)
ccc
M
T A
M
B
M
S
(INSULATOR)
E
C
PIN 3
T
M
(INSULATOR)
bbb
M
T A
M
M
B
M
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
(FLANGE)
B
ARCHIVED 2005
SEATING
PLANE
T A
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
B
SEATING
PLANE
M
MOTOROLA RF DEVICE DATA
aaa
M
T A
M
B
M
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.375
0.385
0.225
0.235
0.105
0.155
0.210
0.220
0.035
0.045
0.004
0.006
0.067
0.057
0.085
0.115
0.355
0.365
0.357
0.363
0.227
0.23
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
9.53
9.78
5.72
5.97
2.67
3.94
5.33
5.59
0.89
1.14
0.10
0.15
1.70
1.45
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 360C - 05
ISSUE D
NI - 360S
MRF183LSR1
MRF183R1 MRF183LSR1
11
Archived 2005
ARCHIVED 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
“Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the
rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part.
MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective
owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola Inc. 2003
HOW TO REACH US:
JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center,
3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
USA /EUROPE /LOCATIONS NOT LISTED:
Motorola Literature Distribution
P.O. Box 5405, Denver, Colorado 80217
1-800-521-6274 or 480-768-2130
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2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF183R1 MRF183LSR1
12
◊
MOTOROLA RF DEVICE DATA
MRF183/D
Archived 2005