Inchange Semiconductor Product Specification 2N6753 2N6754 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage ·Low saturation voltage ·Fast switching speed APPLICATIONS ·Off-line power supplies ·High-voltage inverters ·Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 2N6753 VCBO Collector-base voltage VALUE UNIT 900 Open emitter 2N6754 V 1000 VCEO Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector 500 V 8 V IC Collector current 10 A IB Base current 5 A PD Total Power Dissipation 150 W Tj Junction temperature -65~175 ℃ Tstg Storage temperature -65~200 ℃ VALUE UNIT 1.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A; IB=3A 3.0 V Base-emitter saturation voltage IC=5A ;IB=1A 1.3 V 2N6753 VCE=900V; VBE=-1.5V TC=100℃ 0.1 1.0 2N6754 VCE=1000V; VBE=-1.5V TC=100℃ 0.1 1.0 2.0 VBEsat ICEV CONDITIONS MIN TYP. MAX 500 UNIT V Collector cut-off current mA IEBO Emitter cut-off current VEB=8V; IC=0 hFE DC current gain IC=5A ; VCE=3V 8 40 COB Output capacitance IE=0 ; VCB=10V;f=0.1MHz 50 250 pF fT Transition frequency IC=0.2A ; VCE=10V 15 60 MHz 2 mA Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6753 2N6754 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) 3