ISC 2N6753

Inchange Semiconductor
Product Specification
2N6753 2N6754
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
·Low saturation voltage
·Fast switching speed
APPLICATIONS
·Off-line power supplies
·High-voltage inverters
·Switching regulators
PINNING
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
2N6753
VCBO
Collector-base voltage
VALUE
UNIT
900
Open emitter
2N6754
V
1000
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
500
V
8
V
IC
Collector current
10
A
IB
Base current
5
A
PD
Total Power Dissipation
150
W
Tj
Junction temperature
-65~175
℃
Tstg
Storage temperature
-65~200
℃
VALUE
UNIT
1.0
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6753 2N6754
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCEsat-1
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VCEsat-2
Collector-emitter saturation voltage
IC=10A; IB=3A
3.0
V
Base-emitter saturation voltage
IC=5A ;IB=1A
1.3
V
2N6753
VCE=900V; VBE=-1.5V
TC=100℃
0.1
1.0
2N6754
VCE=1000V; VBE=-1.5V
TC=100℃
0.1
1.0
2.0
VBEsat
ICEV
CONDITIONS
MIN
TYP.
MAX
500
UNIT
V
Collector cut-off current
mA
IEBO
Emitter cut-off current
VEB=8V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
8
40
COB
Output capacitance
IE=0 ; VCB=10V;f=0.1MHz
50
250
pF
fT
Transition frequency
IC=0.2A ; VCE=10V
15
60
MHz
2
mA
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6753 2N6754
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3