ROHM 2SA1037AK_09

General Purpose Transistor (50V, 0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
Dimensions (Unit : mm)
2SA1576A
2.0
(1)
1.3
(2)
0.65 0.65
0.9
(3)
0.3
(2)
0.95 0.95
1.9
2.9
(3)
0.7
(1)
2SA1037AK
0.4
Features
1) Excellent hFE linearity.
2) Complements the 2SC2412K / 2SC4081 /
2SC4617 / 2SC5658 / 2SC1740S.
1.25
1.6
2.1
0.1 to 0.4
0 to 0.1
0.3 to 0.6
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : F ∗
Abbreviated symbol : F ∗
2SA2029
0.5
0.13
0 to 0.1
0.7
0 to 0.1
0.55
0.15
ROHM : EMT3
EIAJ : SC-75A
0.22
(1)
1.6
0.1Min.
0.2
(2)
(3)
0.8
1.2
0.32
0.2
0.8
1.2
0.8
0.2
1.6
(2)
(3)
1.0
0.5 0.5
(1)
0.2
2SA1774
0.3
0 to 0.1
0.15
1.1
0.8
0.15
0.2
2.8
0.4 0.4
Structure
Epitaxial planar type.
PNP silicon transistor
(1) Emitter
(2) Base
(3) Collecto
ROHM : VMT3
EIAJ :
Abbreviated symbol : F ∗
0.15Max.
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F ∗
2SA933AS
2
(15Min.)
3Min.
3
4
0.45
2.5
0.5 0.45
5
(1) (2) (3)
Taping specifications
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
2009.12 - Rev.B
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
Data Sheet
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
IC
−0.15
A (DC)
PC
0.15
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55 to +150
˚C
Parameter
Collector current
2SA1037AK, 2SA1576A
Collector power
dissipation
0.2
2SA2029, 2SA1774
2SA933AS
W
0.3
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
−60
−
−
V
IC= −50μA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC= −1mA
Emitter-base breakdown voltage
Conditions
BVEBO
−6
−
−
V
IE= −50μA
Collector cutoff current
ICBO
−
−
−0.1
μA
VCB= −60V
Emitter cutoff current
IEBO
−
−
−0.1
μA
VEB= −6V
VCE(sat)
−
−
−0.5
V
IC/IB= −50mA/−5mA
hFE
120
−
390
−
VCE= −6V, IC= −1mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
4.0
5.0
pF
Collector-emitter saturation voltage
DC current transfer ratio
VCE= −12V, IE=2mA, f=100MHz
VCB= −12V, IE=0A, f=1MHz
Packaging specifications and hFE
Package
Type
hFE
2SA2029
QR
Taping
Code
T146
T106
TL
T2L
TP
Basic ordering
unit (pieces)
3000
3000
3000
8000
5000
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2SA1037AK QR
2SA1576A
−
QR
2SA1774
QR
−
−
2SA933AS
QR
−
−
−
hFE values are classified as follows:
Item
Q
R
hFE
120 to 270
180 to 390
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/3
2009.12 - Rev.B
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
Data Sheet
Electrical characteristic curves
−5
−2
−1
−0.5
−0.2
−0.1
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Fig.1 Grounded emitter propagation
characteristics
−24.5
−21.0
−6
−17.5
−14.0
−4
−10.5
−7.0
−2
−3.5μA
−0.8
−0.4
−1.6
−1.2
−250
−200
−150
−40
−100
−20
−50μA
IB=0
0
−1
−2
−3
−4
−5
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
−40˚C
200
100
50
50
−1
Ta=25˚C
−0.5
−0.2
IC/IB=50
−0.1
20
10
−0.05
−2
−5 −10 −20
−0.2 −0.5 −1
−50 −100
Fig.4 DC current gain vs.
collector current (I)
1000
TRANSITION FREQUENCY : fT (MHz)
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
500
200
100
50
0.5
1
2
5
10
20
50
100
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
3/3
−5 −10 −20
−50 −100
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Ta=25˚C
VCE= −12V
lC/lB=10
−2
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (II)
−0.5
−0.2 −0.5 −1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
−1
VCE= −6V
−5 −10 −20 −50 −100
−2
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
−0.2 −0.5 −1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−500
−450
−400
−350
−300
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
25˚C
100
−60
Ta=25˚C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Ta=100˚C
200
−80
IB=0
−2.0
500
VCE= −5V
−3V
−1V
Ta=25˚C
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
500
−28.0
−8
0
BASE TO EMITTER VOLTAGE : VBE (V)
−100
−31.5
COLLECTOR CURRENT : IC (mA)
−10
−35.0
Ta=25˚C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
−20
−10
VCE= −6V
Ta=100˚C
25˚C
−40˚C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
−50
20
Ta=25˚C
f=1MHz
IE=0A
IC=0A
Cib
10
Co
b
5
2
−0.5
−1
−2
−5
−10
−20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
2009.12 - Rev.B
Notice
Notes
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