DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat). This transistor is ideal for use as a driver in DC/DC converters and actuators. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES • Auto-mounting possible in radial taping specifications • Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions • High hFE and low VCE(sat): VCE(sat) ≤ −0.3 V @IC = −3.0 A, IB = −0.15 A hFE ≥ 100 @VCE = −2.0 V, IC = −1.0 A • Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO −100 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −5.0 A Collector current (pulse) IC(pulse) −10 A Base current (DC) IB(DC) −2.5 A 1.8 W PW ≤ 300 µs, duty cycle ≤ 2% Ta = 25°C Total power dissipation PT Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15591EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 1998 2002 2SA1843 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. MAX. Unit Collector cutoff current ICBO VCB = −60 V, IE = 0 −10 µA Collector cutoff current ICER VCE = −60 V, REB = 50 Ω Ta = 125°C −1.0 mA Collector cutoff current ICEX1 VCE = −60 V, VBE(off) = 1.5 V −10 µA Collector cutoff current ICEX2 VCE = −60 V, VBE(off) = 1.5 V Ta = 125°C −1.0 mA Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10 µA DC current gain hFE1* VCE = −2.0 V, IC = −0.5 A 100 DC current gain hFE2* VCE = −2.0 V, IC = −1.0 A 100 DC current gain hFE3* VCE = −2.0 V, IC = −3.0 A 60 Collector saturation voltage VCE(sat)1* IC = −3.0 A, IB = −0.15 A −0.3 V Collector saturation voltage VCE(sat)2* IC = −4.0 A, IB = −0.2 A −0.5 V Base saturation voltage VBE(sat)1* IC = −3.0 A, IB = −0.15 A −1.2 V Base saturation voltage VBE(sat)2* IC = −4.0 A, IB = −0.2 A −1.5 V Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 80 MHz − 400 − − Collector capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 130 pF Turn-on time ton 0.15 µs Storage time tstg IC = −3.0 A IB1 = −IB2 = −0.15 A RL = 17 Ω, VCC = −50 V 1.0 µs 0.1 µs Fall time tf * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE 100 to 200 150 to 300 200 to 400 PACKAGE DRAWING (UNIT: mm) TAPING SPECIFICATION (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU 2 TYP. Data Sheet D15591EJ2V0DS 2SA1843 ,&'HUDWLQJG7 7RWDO3RZHU'LVVLSDWLRQ37: TYPICAL CHARACTERISTICS (Ta = 25°°C) $PELHQW7HPSHUDWXUH7D°& &ROOHFWRU&XUUHQW,&$ 7UDQVLHQW7KHUPDO5HVLVWDQFHUWKMDW°&: $PELHQW7HPSHUDWXUH7D°& 6LQJOHSXOVH 6LQJOHSXOVH 3XOVH:LGWK3:V &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 '&&XUUHQW*DLQK)( &ROOHFWRU&XUUHQW,&$ 3XOVHWHVW &ROOHFWRUWR(PLWWHU9ROWDJH9&(9 Data Sheet D15591EJ2V0DS &ROOHFWRU&XUUHQW,&$ 3 7XUQ2Q7LPHWRQµV 6WRUDJH7LPHWVWJµV )DOO7LPHWIµV 4 &ROOHFWRU&DSDFLWDQFH&RES) *DLQ%DQGZLGWK3URGXFWI70+] &ROOHFWRU6DWXUDWLRQ9ROWDJH9&(VDW9 3XOVHWHVW %DVH6DWXUDWLRQ9ROWDJH9%(VDW9 2SA1843 &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ &ROOHFWRU&XUUHQW,&$ Data Sheet D15591EJ2V0DS 3XOVHWHVW &ROOHFWRU&XUUHQW,&$ &ROOHFWRUWR%DVH9ROWDJH9&%9 2SA1843 SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP Data Sheet D15591EJ2V0DS 5 2SA1843 • The information in this document is current as of July, 2001. The information is subject to change without notice. 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