2SD2607 Transistors Power Transistor (100V, 8A) 2SD2607 !External dimensions (Units: mm) !Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1668. Limits Unit Collector-emitter voltage Emitter-base voltage VEBO 100 100 7 8 V V V A (DC) 10 A (Pulse) 2 30 Power dissipation PC 8.0 1.3 0.8 0.75 2.54 ROHM : TO-220FN * Junction temperature Tj 150 Storage temperature Tstg −55~+150 °C Single pulse, Pw = 10ms !Packaging specifications and hFE Type 2SD2607 Package hFE TO-220FN 1k~20k Code Basic ordering unit (pieces) 500 !Circuit diagram C B R1 R2 E R1 R2 5kΩ 300kΩ B : Base C : Collector E : Emitter !Electrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current BVCBO BVCEO 100 100 - - V V ICBO 10 3 µA mA 1.5 20000 V MHz Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance *1 Measured using pulse current. - - IEBO - - VCE(sat) - hFE 1000 - 40 fT Cob 2.6 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) (1) (2) (3) W W (Tc = 25°C) °C * 2.8 (1) (2) (3) VCBO VCEO IC 1.2 2.54 Symbol Collector current 5.0 14.0 15.0 12.0 φ 3.2 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage 4.5 10.0 50 *2 Transition frequency of the device. - pF Conditions IC = 50µA IC = 5mA VCB = 100V VEB = 5V IC/IB = 3A/6mA VCE/IC = 3V/2A VCE = 5V , IE = −0.2A , f = 10MHz VCB = 10V , IE = 0A , f = 1MHz *1 *1 *2