DC COMPONENTS CO., LTD. 2SB564A DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency power amplifier applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A Total Power Dissipation PD 800 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO -30 - - V Collector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 ICBO - - -100 nA VCB=-30V, IE=0 Collector Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Base-Emitter Saturation Voltage DC Current Gain(1) VCE(sat) - - -0.5 V IC=-1A, IB=-100mA VBE(sat) - - -1.2 V IC=-1A, IB=-100mA hFE 70 - 400 - Transition Frequency fT - 110 - MHz Output Capacitance Cob - 18 - pF (1)Pulse Test: Pulse Width Test Conditions IC=-100µA, IE=0 380µs, Duty Cycle 2% Classification of hFE Rank O Y GR Range 70~140 120~240 200~400 IC=-100mA, VCE=-1V IC=-10mA, VCE=-6V, f=100MHz VCB=-6V, f=1MHz