Transistors 2SB0976 (2SB976) Silicon PNP epitaxial planar type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.7±0.2 ■ Features 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −27 V Collector-emitter voltage (Base open) VCEO −18 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −5 A Peak collector current ICP −8 A Collector power dissipation PC 0.75 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −18 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 −100 nA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −1 µA hFE VCE = −2 V, IC = −2 A 625 VCE(sat) IC = −3 A, IB = − 0.1 A − 0.4 −1.0 V VCB = −6 V, IE = 50 mA, f = 200 MHz 120 MHz VCB = −20 V, IE = 0, f = 1 MHz 60 pF Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ 125 Max Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE 125 to 205 180 to 625 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00064BED 1 2SB0976 PC Ta IC VCE 0.4 0.2 −25 mA −4 −20 mA −15 mA −3 −10 mA −2 −5 mA −1 40 80 120 0 160 Ambient temperature Ta (°C) −1 mA −2 0 25°C −25°C − 0.1 − 0.1 −4 −6 −8 −1 −10 Collector current IC (A) 600 Ta = 75°C 400 25°C −25°C 200 0 − 0.01 − 0.1 −1 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob IE = 0 f = 1 MHz Ta = 25°C 120 80 40 −10 −100 Collector-base voltage VCB (V) 2 0 − 0.4 − 0.8 −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) fT I E 800 160 0 −1 0 −12 VCE = −2 V Cob VCB 200 −10 240 1 000 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C −25°C −4 hFE IC −10 − 0.01 − 0.01 Ta = 75°C −6 Collector-emitter voltage VCE (V) IC / IB = 30 −1 25°C −8 −2 VCE(sat) IC −100 VCE = −2 V −10 VCB = −6 V Ta = 25°C Transition frequency fT (MHz) 0 −30 mA Collector current IC (A) Collector current IC (A) Collector power dissipation PC (mW) 0.6 −12 Ta = 25°C IB = −40 mA −35 mA −5 0.8 0 IC VBE −6 1.0 SJC00064BED −10 200 160 120 80 40 0 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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