Transistors 2SC3526H Silicon NPN epitaxial planar type For display video output Unit: mm 5.9±0.2 4.9±0.2 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob • Wide current range 8.6±0.2 ■ Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 110 V Collector-emitter voltage VCER 100 V 0.45+0.2 –0.1 0.45+0.2 –0.1 (1.27) (Resistor between B and E) (1.27) 1 2 3 Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 3.5 V Collector current IC 150 mA Peak collector current ICP 300 mA Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (3.2) Parameter 2.54±0.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 110 V Collector-emitter voltage (Resistor between B and E) VCER IC = 500 µA, RBE = 470 Ω 100 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0 3.5 V Collector-emitter cutoff current (Base open) ICEO VCE = 35 V, IB = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA VCE(sat) IC = 150 mA, IB = 15 mA Collector-emitter saturation voltage Conditions Min Typ Max 10 Unit µA 20 0.5 Transition frequency fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 Collector output capacitance (Common base, input open circuited) Cob VCB = 30 V, IE = 0, f = 1 MHz 3 V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJC00133BED 1 2SC3526H IC VCE Collector power dissipation PC (W) 240 Collector current IC (mA) 200 1.2 0.8 0.4 IC VBE Ta = 25°C 120 IB = 5.0 mA 100 4.5 mA 160 4.0 mA 3.5 mA 120 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 40 Collector current IC (mA) PC Ta 1.6 VCE = 5 V 25°C Ta = 75°C −25°C 80 60 40 20 1.0 mA 0.5 mA 0 40 80 120 0 160 Ambient temperature Ta (°C) 0 2 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 1 Ta = 75°C 25°C −25°C 1 10 100 1 000 Collector current IC (mA) 80 60 Ta = 75°C 25°C 40 −25°C 20 0 0.1 1 10 Collector current IC (mA) Collector output capacitance C (pF) (Common base, input open circuited) ob 4 3 2 1 0 1 10 100 Collector-base voltage VCB (V) 2 0 SJC00133BED 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage VBE (V) fT I E 100 IE = 0 f = 1 MHz Ta = 25°C 5 0 12 600 VCE = 5 V Cob VCB 6 10 hFE IC 10 0.01 8 120 IC / IB = 10 0.1 6 Collector-emitter voltage VCE (V) VCE(sat) IC 100 4 VCB = 10 V Ta = 25˚C Transition frequency fT (MHz) 0 100 500 400 300 200 100 0 −1 −10 −100 Emitter current IE (mA) −1 000 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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