Transistors 2SC5813 Silicon NPN epitaxial planar type For DC-DC converter Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing (0.95) (0.95) 1.9±0.1 (0.65) 2 1 2.90+0.20 –0.05 ■ Absolute Maximum Ratings Ta = 25°C Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 80 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A Collector power dissipation * PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 10˚ 1.1+0.2 –0.1 Rating 1.1+0.3 –0.1 Symbol 0 to 0.1 Parameter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: 5H Note) *: Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 80 Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 80 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 40 V, IE = 0 Forward current transfer ratio * hFE VCE = 2 V, IC = 100 mA Collector-emitter saturation voltage * Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob Conditions Min Typ Max Unit V 0.1 µA 200 IC = 1 A, IB = 20 mA 350 VCB = 10 V, IE = −50 mA, f = 200 MHz 180 VCB = 10 V, IE = 0, f = 1 MHz 15 500 mV MHz 25 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Publication date: December 2002 SJC00285BED 1 2SC5813 PC Ta IC VCE 200 2.0 mA 1.5 mA 0.6 0.5 1.0 mA 0.4 0.3 0.2 0.5 mA 0 0 20 40 60 80 100 120 140 160 0 1 2 Collector output capacitance C (pF) (Common base, input open circuited) ob IC / IB = 10 25°C Ta = 75°C −25°C 0.01 4 5 Cob VCB 0.1 0.01 0.001 3 Collector-emitter voltage VCE (V) VCE(sat) IC 1 0.1 Collector current IC (A) 1 100 f = 1 MHz Ta = 25°C 10 1 VCE = 2 V Ta = 75°C 300 25°C 250 200 −25°C 150 100 50 0.1 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 350 Forward current transfer ratio hFE 400 IB = 3.0 mA 2.5 mA 0.7 600 Collector current IC (A) Collector power dissipation PC (mW) 0.8 0 2 hFE IC 400 0.9 800 0 10 20 30 Collector-base voltage VCB (V) SJC00285BED 40 0 0.001 0.01 0.1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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