〈 SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit:mm ISAHAYA 2SC5974B is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. application 4.0 0.1 FEATURE ・ High Emitter to Base voltage 0.45 VEBO=40V ・ High Reverse hFE ・ Low ON RESISTANCE. R ON =0.75Ω 1.27 1.27 ・ Small packege for mounting ① ② ③ APPLICATION For muting, switching application TERMINAL CONNECTOR 1 2 3 MAXIMUM RATINGS (Ta=25℃) Symbol Parameter Ratings Unit V CBO Collector to Base voltage 40 V Collector to Emitter voltage Emitter to Base voltage 9 V 40 V V CEO V EBO I Collector current 200 mA PC Collector dissipation 450 mW Tj Junction temperature +125 ℃ -55 ∼ +125 ℃ C Tstg Storage temprature : EMITTER : COLLECTOR : BASE EIJA: - ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Limits Test conditions Min Typ Unit Max I CBO Collector cut off current V CB=40V, I E =0mA 0.1 μA I EBO Emitter cut off current V EB=40V, IC =0mA 0.1 μA h FE DC forward current gain V CE =2V, I V CE(sat) C to E saturation voltage I C =30mA, I B=3mA V CE =6V, I C =4mA V CB=10V, I E =0mA, f=1MHz fT C ob Gain bandwidth product Collector output capacitance C =4mA 2200 700 25 mV 150 MHz 3 .0 pF 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE COMMON EMITTER OUTPUT COMMON EMITTER TRANSFER 80 50 Ta=25℃ VCE=2V 60μA COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 70 60 50μA 50 40μA 40 30μA 30 20 20μA 10 IB=10μA 0 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 0 0.2 COLLECTOR TO EMITTER VOLTAGE VCE(V) DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 0.8 1 10000 Ta=25℃ VCE=2V DC REVERSE CURRENT GAIN hFER DC FORWARD CURRENT GAIN hFE 0.6 DC REVERSE CURRENT GAIN VS.COLLECTOR CURRENT 10000 1000 100 10 Ta=25℃ VEC=2V 1000 100 10 0.1 1 10 COLLECTOR CURRENT 100 0.1 1 IC(mA) EMITTER CURRENT COLLECTOR TO EMITTER SATURATION VOLTAGE VS, COLLECTOR CURRENT 10 100 IE(mA) ON RESISTANCE VS.BASE CURRENT 1000 10 Ta=25℃ IC/IB=10 Ta=25℃ 100 ON RESISTANCE Ron(Ω) C TO E SATURATION VOLTAGE VCE(sat)(mV) 0.4 BASE TO EMITTER VOLTAGE VBE(V) 10 1 0.1 1 0.1 0.1 1 10 COLLECTOR CURRENT 100 IC(mA) 1000 0.1 1 10 BASE CURRENT IB(mA) 100 〈SMALL-SIGNAL TRANSISTOR〉 2SC5974B FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE GAIN BAND WIDTH PRODUCT VS. COLLECTOR OUTPUT CAPACITANCE EMITTER CURRENT VS.COLLECTOR TO BASE VOLTAGE 1000 100 Ta=25℃ 100 10 -0.1 -1 -10 -100 Ta=25℃ IE=0 f=1MHz Cob(pF) COLLECTOR OUTPUT CAPACITANCE GAIN BAND WIDTH PRODUCT fT(MHz) VCE=6V 10 1 0.1 1 10 EMITTER CURRENT IE(mA) COLLECTOR TO BASE VOLTAGE VCB(V) 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Jan.2003