NEC 2SD1481

DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
PACKAGE DRAWING (UNIT: mm)
• On-chip C-to-B Zener diode for surge voltage absorption
• Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A)
• Ideal for use in a direct drive from IC to the devices such as OA
and FA equipment and motor solenoid relay printer head drivers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60 ±10
V
Collector to emitter voltage
VCEO
60 ±10
V
Emitter to base voltage
VEBO
7.0
V
Collector current
IC(DC)
2.0
A
Collector current
IC(pulse)*
4.0
A
IB(DC)
0.2
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Base current
* PW ≤ 300 µs, duty cycle ≤ 10%
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16189EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
2SD1481
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
1.0
µA
Collector cutoff current
ICBO
VCB = 40 V, IE = 0
DC current gain
hFE1
VCE = 2.0 V, IC = 1.0 A*
2,000
DC current gain
hFE2
VCE = 2.0 V, IC = 3.0 A*
500
Collector saturation voltage
VCE(sat)
IC = 1.0 A, IB = 1.0 mA*
1.5
V
Base saturation voltage
VBE(sat)
IC = 1.0 A, IB = 1.0 mA*
2.0
V
Turn-on time
ton
Storage time
tstg
Fall time
IC = 1.0 A, IB1 = −IB2 = 10 mA
RL = 50 Ω, VCC ≅ 50 V
Refer to the test circuit.
tf
20,000
0.5
µs
2.0
µs
1.0
µs
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE1
2,000 to 5,000
4,000 to 10,000
8,000 to 20,000
TYPICAL CHARACTERISTICS (Ta = 25°°C)
With infinite heatsink
Collector Current IC (A)
Total Power Dissipation PT (W)
CASE
Collector to Emitter Voltage VCE (V)
IC Derating dT (%)
Collector Current IC (A)
Case Temperature Tc (°C)
Collector to Emitter Voltage VCE (V)
Case Temperature TC (°C)
2
Notes 1. Tc = 25°C
2.
3.
Data Sheet D16189EJ1V0DS
DC Current Gain hFE
Pulse test
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
2SD1481
Pulse test
Collector Current IC (A)
Collector Current IC (A)
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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Data Sheet D16189EJ1V0DS
3
2SD1481
• The information in this document is current as of July, 2001. The information is subject to change
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