DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip C-to-B Zener diode for surge voltage absorption • Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) • Ideal for use in a direct drive from IC to the devices such as OA and FA equipment and motor solenoid relay printer head drivers ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 ±10 V Collector to emitter voltage VCEO 60 ±10 V Emitter to base voltage VEBO 7.0 V Collector current IC(DC) 2.0 A Collector current IC(pulse)* 4.0 A IB(DC) 0.2 A Total power dissipation PT (Tc = 25°C) 15 W Total power dissipation PT (Ta = 25°C) 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current * PW ≤ 300 µs, duty cycle ≤ 10% (OHFWURGH&RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU )LQFROOHFWRU The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16189EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SD1481 ELECTRICAL CHARACTERISTICS (Ta = 25°°C) Parameter Symbol Conditions MIN. TYP. MAX. Unit 1.0 µA Collector cutoff current ICBO VCB = 40 V, IE = 0 DC current gain hFE1 VCE = 2.0 V, IC = 1.0 A* 2,000 DC current gain hFE2 VCE = 2.0 V, IC = 3.0 A* 500 Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 1.0 mA* 1.5 V Base saturation voltage VBE(sat) IC = 1.0 A, IB = 1.0 mA* 2.0 V Turn-on time ton Storage time tstg Fall time IC = 1.0 A, IB1 = −IB2 = 10 mA RL = 50 Ω, VCC ≅ 50 V Refer to the test circuit. tf 20,000 0.5 µs 2.0 µs 1.0 µs * Pulse test PW ≤ 350 µs, duty cycle ≤ 2% hFE CLASSIFICATION Marking M L K hFE1 2,000 to 5,000 4,000 to 10,000 8,000 to 20,000 TYPICAL CHARACTERISTICS (Ta = 25°°C) With infinite heatsink Collector Current IC (A) Total Power Dissipation PT (W) CASE Collector to Emitter Voltage VCE (V) IC Derating dT (%) Collector Current IC (A) Case Temperature Tc (°C) Collector to Emitter Voltage VCE (V) Case Temperature TC (°C) 2 Notes 1. Tc = 25°C 2. 3. Data Sheet D16189EJ1V0DS DC Current Gain hFE Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) 2SD1481 Pulse test Collector Current IC (A) Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVHFXUUHQW ZDYHIRUP &ROOHFWRUFXUUHQW ZDYHIRUP Data Sheet D16189EJ1V0DS 3 2SD1481 • The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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