PF0147 MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-322D (Z) 5th. Edition June, 1996 Application For GSM class4 890 to 915MHz. Features • • • • 2stage amplifier Small package: 0.6cc High efficiency: 40% Typ High speed switching: 0.9µsec Typ Pin Arrangement • RF-H1 5 5 1 2 3 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND 4 Absolute Maximum Ratings (Tc = 25°C) Item Symbol Rating Unit Supply voltage VDD 10 V Supply current IDD 3 A VAPC voltage VAPC 6 V Input power Pin 20 mW Operating case temperature Tc (op) –30 to +100 °C Storage temperature Tstg –30 to +100 °C Output power Pout 7 W PF0147 Internal Diagram G G G G: GND PIN1 Pin G PIN2 VAPC PIN3 VDD PIN4 Pout Electrical Characteristics (Tc = 25°C) Item Symbol Min Typ Max Unit Frequency range f 890 — 915 MHz Control voltage range VAPC 0.5 — 3.5 V — — 100 µA VDD = 10V, VAPC = 0V Drain cutoff current IDS Test Condition Total efficiency ηT 35 40 — % Pin = 10mW, VDD = 4.8V, 2nd harmonic distortion 2nd H.D. — –50 –40 dBc Pout = 3.2W (at APC controlled), 3rd harmonic distortion 3rd H.D. — –50 –40 dBc RL = Rg = 50Ω, Tc = 25°C Input VSWR VSWR (in) — 2 3 — Output power (1) Pout (1) 3.2 3.8 — W Pin = 10mW, VDD = 4.8V, VAPC = 3.5V, RL = Rg = 50Ω, Tc = 25°C Output power (2) Pout (2) 1.8 2.4 — W Pin = 10mW, VDD = 4.3V, VAPC = 3.5V, RL = Rg = 50Ω, Tc = 80°C Isolation — — — –20 dBm Pin = 10mW, VDD = 4.8V, VAPC = 0.5V, RL = Rg = 50Ω, Tc = 25°C Switching time tr, tf — 0.9 2 µs Pin = 10mW, VDD = 4.8V, Pout = 3.2W, RL = Rg = 50Ω, Tc = 25°C Stability — No parasitic oscillation — Pin = 10mW, VDD = 6.0V, Pout ≤ 3.2W (at APC controlled), Rg = 50Ω, t = 20sec., Tc = 25°C, Output VSWR = 10 : 1 All phases PF0147 Test System Diagram S.G VAPC VDD Power Meter Spectrum Analyzer 3dB ATT L.P.F TEST FIXTURE Power Meter RF SW. Directional Coupler Directional Coupler Phase Shifter Short Switching Time Test Diagram VDD = 4.8V S.G Z=50Ω Pin Power Meter D.U.T Pout P.G 2p 2p VAPC f = 217Hz 1SS106 100p Oscillo Scope 1SS106 2.2kΩ Vout Duty=1/8 50% 50% VAPC 95% 5% Pout tr tf PF0147 Test Fixture Test Circuit Pin VAPC Z1 VDD FB1 Pin C2 + FB2 VAPC VDD Pout C1 Z2 Pout C1 = 0.01µF Ceramic chip C2 = 220µF Aluminum electrolyte FB = Ferrite bead BLO1RN1-A62-001 (MURATA) or equivalent Z1 = Z2 = 50Ω Micro strip line Printed Circuit Board Layout 41.87 16.26 41.87 5 30 2.88 5 5 6.5 2 2 5 5 5 7 80 5 7 100 Grass Epoxy Double sided P.C.B (t=1.6mm, εr=4.8) Unit: mm : Through hole (φ=1mm) PF0147 Note for Use • At evaluation of a sample, take the drop of VDD voltage and power loss on test P.C.B. into account. • Apply control voltage range as VAPC = 0.5 to 3.5V, and GSM burst mode must be applied to all operation. For instance, pulse width = 0.577msec., duty = 12.5% and VAPC ≤ 0.5V, for all 4.616msec. frame except for 0.577msec. pulse. • Unevenness and distortion at the surface of PCB mounted module should be as small as possible. • To protect devices from electro-static damage, soldering iron, measuring equipment and human body, etc. should be grounded. • To avoid the degradation of efficiency and output power, lead pins should not be floated from copper foil of PCB, and connected to right position of RF signal line. (refer to figure 2) • Recommendation to improve the thermal resistance is shown below. — Make through holes as many as possible under module. — Use heat sink on the top case of module. • When the external components (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics of total system should be evaluated enough. • To avoid destruction of module caused by excess power consumption, voltage of APC should be limited less than 6V. • To get good stability, all GND pins should be soldered to ground pattern of PCB. • Don’ t apply Full Heating Methods except Infrared Heating Methods. • In case of Partial Heating Methods, soldering temperature and time should be less than 230°C, 10sec, per each GND pin. • Soldering temperature and time for I.R. Reflow should be the reflow profile shown in figure 2. • Recommended conditions for Rising Methods shows as follows. Solvents: de-ionized water, isopropyl alcohol, ethyl alcohol Rising condition: in case of soak rising 5 Min Max, in case of ultrasonic rising 5 Min Max • Don’ t apply dipping solder method to mount. • Apply the way of washing after actual confirmation. • Recommended pattern of footprint is shown in figure 3. RF signal line Worse Better module module PCB All of lead pins should be connected just on the RF signal line. Figure 1 PF0147 (°C) Soldering 230 Natural-cooling Pre-heating 160 140 –1[°C/s] 60 to 90s 30s Max 1[°C/s] –4[°C/s] 4[°C/s] Room temp. Package surface temperature (an example) Figure 2 Recommended Reflow Profile 14.2 3.1 8.2 0.4 1.5 1.5 1.5 1.5 1.6 3.1 4.0 Package Surface Temperature 230°C Max 1 to 4[°C/s] 5.1 5.1 3.5 Unit: mm Figure 3 Recommended Pattern of Footprint PF0147 Characteristics Curve VAPC, ηT, VSWR (in) vs. Frequency 3 50 5 Apc Voltage VAPC (V) 2 40 3 30 VAPC 20 2 VSWR 1.5 10 1 Pin = 10.4mW VDD = 4.8V Pout = 3.2W 1 0 870 885 900 915 0 930 Frequency f (MHz) 2nd H.D, 3rd H.D vs. Frequency –30 –30 Pin = 10.4mW VDD = 4.8V Pout = 3.2W 2nd H.D (dB) –40 –40 –50 2nd H.D –50 –60 3rd H.D –60 –70 –80 870 –70 885 900 Frequency f (MHz) 915 –80 930 3rd H.D (dB) V.S.W.R. (in) 2.5 Efficiency ηT (%) ηT 4 PF0147 Pout, ηT vs. VAPC (1) 50 5 f = 890MHz Pin = 10.4mW VDD = 4.8V 40 30 3 Pout 2 20 1 10 0 1 1.5 2 3 2.5 Efficiency ηT (%) Output Power Pout (W) 4 ηT 0 3.5 Apc Voltage VAPC (V) Pout, ηT vs. VAPC (2) 50 5 f = 915MHz Pin = 10.4mW VDD = 4.8V 40 3 30 Pout 2 20 1 10 0 1 1.5 2 2.5 Apc Voltage VAPC (V) 3 0 3.5 Efficiency ηT (%) Output Power Pout (W) 4 ηT PF0147 2nd H.D, 3rd H.D, VSWR (in) vs. VAPC (1) 3 –20 –20 –30 –30 –40 –40 2nd H.D VSWR –50 –50 3rd H.D (dBc) 2 2nd H.D (dBc) V.S.W.R. (in) 2.5 3rd H.D 1.5 –60 1 –60 f = 890MHz Pin = 10.4mW VDD = 4.8V –70 1 1.5 2 2.5 3 –70 3.5 Apc Voltage VAPC (V) 2nd H.D, 3rd H.D, VSWR (in) vs. VAPC (2) 3 –20 –20 –30 –30 2nd H.D (dBc) V.S.W.R. (in) 2 2nd H.D –40 –40 –50 –50 1.5 3rd H.D f = 915MHz Pin = 10.4mW VDD = 4.8V –60 1 –60 –70 1 1.5 2 2.5 Apc Voltage VAPC (V) 3 –70 3.5 3rd H.D (dBc) VSWR 2.5 PF0147 Pout, ηT vs. Pin (1) 60 5 f = 890MHz VDD = 4.8V VAPC = 3.5V 50 ηT 3 40 2 30 1 20 0 5 6 7 8 9 10 11 12 13 14 Efficiency ηT (%) Output Power Pout (W) 4 Pout 10 15 Input Power Pin (mW) Pout, ηT vs. Pin (2) 60 5 f = 915MHz VDD = 4.8V VAPC = 3.5V Pout 50 ηT 3 40 2 30 1 20 0 5 6 7 8 9 10 11 12 Input Power Pin (mW) 13 14 10 15 Efficiency ηT (%) Output Power Pout (W) 4 PF0147 ηT, VAPC, VSWR (in) vs. Pin (1) 3 5 50 ηT 4 Efficiency ηT (%) V.S.W.R. (in) 2 VSWR VAPC 30 3 20 2 Apc Voltage VAPC (V) 40 2.5 1.5 10 1 1 f = 890MHz VDD = 4.8V Pout = 3.2W 0 5 6 7 8 9 10 11 12 13 14 0 15 Input Power Pin (mW) ηT, VAPC, VSWR (in) vs. Pin (2) 3 5 50 40 4 30 3 2 Efficiency ηT (%) V.S.W.R. (in) 2.5 VAPC 2 20 1.5 VSWR 10 1 1 f = 915MHz VDD = 4.8V Pout = 3.2W 0 5 6 7 8 9 10 11 12 Apc Voltage VAPC (V) 13 14 0 15 Apc Voltage VAPC (V) ηT PF0147 Package Dimensions Unit: mm (1.8) (2.5) 2 3 4 (5.1) (5.1) (2.5) (0.3) 12 }0.5 (7.5) (4 – 3.0) 1 3.0MAX. 2.35 }0.5 (1.5) (17 ) (1.7 ) 20 }0.3 (1.5) (0.25) (0.5) Hitachi code EIAJ code JEDEC code RF-H1 — —