Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946 Collector-base voltage (Emitter open) VCBO Rating Unit 30 V 2SD0946A 60 2SD0946B 100 Collector-emitter voltage 2SD0946 (Base open) 2SD0946A VCEO 25 0.5±0.1 4.6±0.2 V 1 80 VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 Symbol Collector-base voltage 2SD0946 (Emitter open) 2SD0946A Conditions C B 2SD1263 Min 50 Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = 10 V, IC = 1 A VCE(sat) VBE(sat) Transition frequency V 25 80 Base-emitter saturation voltage *1 Unit 100 IC = 1 mA, IB = 0 VCEO 2SD0946B Collector-emitter saturation voltage Max 30 2SD0946A *1 Typ E 60 2SD0946B Collector-emitter voltage (Base open) 1: Emitter 2: Collector 3: Base TO-126B-A1 Package ≈ 200 Ω IC = 100 µA, IE = 0 VCBO 3 1.76±0.1 Internal Connection ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter 0.5±0.1 2.3±0.2 50 2SD0946B Emitter-base voltage (Collector open) 0.75±0.1 3.05±0.1 3.8±0.3 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer. • A shunt resistor is omitted from the driver. 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 5 V 0.1 µA 0.1 µA 40 000 IC = 1 A, IB = 1 mA 1.8 V IC = 1 A, IB = 1 mA 2.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz fT V 4 000 150 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE Q R S 4 000 to 10 000 8 000 to 20 000 16 000 to 40 000 Note) The part numbers in the parenthesis show conventional part number. Publication date: May 2003 SJD00164BED 1 2SD0946, 2SD0946A, 2SD0946B Collector power dissipation PC (W) Without heat sink 1.2 0.8 0.4 0 0 40 80 120 160 IC/IB=1000 10 1 TC=–25˚C 100˚C 25˚C 0.1 0.01 0.01 Ambient temperature Ta (°C) Forward current transfer ratio hFE 25˚C TC=100˚C –25˚C 103 0.1 1 Collector current IC (A) 2 Collector output capacitance C (pF) (Common base, input open circuited) ob VCE=10V 24 16 12 8 4 0 1 10 Collector-base voltage VCB (V) SJD00164BED TC=–25˚C 1 100˚C 25˚C 0.1 0.1 1 Collector current IC (A) IE=0 f=1MHz TC=25˚C 20 IC/IB=1000 10 0.01 0.01 1 Cob VCB 105 102 0.01 0.1 Collector current IC (A) hFE IC 104 VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.6 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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