2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 1 • • • • 1 2, 4 2 2 3 3 1 1. Gate 2. Drain 3. Source 4. Drain 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –30 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –120 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –30 A ——————————————————————————————————————————— Avalanche current IAP*** –30 A ——————————————————————————————————————————— Avalanche energy EAR*** 77 mJ ——————————————————————————————————————————— Channel dissipation Pch** 75 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ280 L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±200 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.033 0.043 Ω ID = –15 A VGS = –10 V * ———————————————————————— — 0.045 0.06 Ω ID = –15 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 17 25 — S ID = –15 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 3300 — pF VDS = 10 V ———————————————————————————————— Output capacitance Coss — 1500 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 480 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 30 — ns ID = –15 A ———————————————————————————————— Rise time tr — 170 — ns ———————————————————————————————— Turn–off delay time td(off) — 500 — ns VGS = –10 V RL = 2 Ω ———————————————————————————————— Fall time tf — 390 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.5 — V IF = –30 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 200 — ns IF = –30 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test 2SJ280 L , 2SJ280 S Maximum Safe Operation Area Power vs. Temperature Derating –500 –300 D (A) Drain Current I Drain Current I D (A) –10 ea ) ar on D S( O is pe lim ra ite tion d in by t R his ) °C 25 –2.5 V µs = –20 s m –40 –30 µs Typical Transfer Characteristics –50 –3 V 0 Drain Current I D (A) 10 –40 c (T 150 Typical Output Characteristics –10 V –6 V –4 V –3.5 V 10 –3 Ta = 25°C –1 –0.5 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage VDS (V) Case Temperature Tc (°C) –50 = 100 s m 50 –10 1 0 –30 n PW atio r pe O 25 10 50 –100 DC Channel Dissipation Pch (W) 75 Tc = 25°C –25°C 75°C Pulse Test –30 V = –10 V GS –20 –10 VGS = –2 V 0 0 –2 –4 –6 –8 –10 Drain to Source Voltage VDS (V) 0 –1 –2 –3 –4 –5 Gate to Source Voltage VGS (V) 2SJ280 L , 2SJ280 S Drain-Source Saturation Voltage vs. Gate-Source Voltage Static Drain-Source on State Resistance vs. Drain Current Pulse Test –1.6 –1.2 I D = –30 A 0.2 0.1 VGS = –4 V 0.05 –20 A –0.8 –10 V 0.02 –10 A –0.4 0 0.01 –2 –4 –6 –8 –10 Gate to Source Voltage VGS (V) Static Drain-Source on State Resistance vs. Temperature 0.1 Static Drain-Source on State Resistance RDS(on) ( Ω ) Static Drain-Source on State Resistance R DS(on) (Ω ) 0.5 0.08 Pulse test 0.005 –2 –5 –10 –20 –50 –100 –200 Drain Current I D (A) Forward Transfer Admittance vs. Drain Current 100 Forward Transfer Admittance |y fs | (s) Drain to Source Saturation Voltage V DS (on) (V) –2.0 50 I D = –30 A 20 0.06 VGS = –4 V –10 A, –20 A 0.04 0.02 0 –40 –10 V I D = –30 A –10 A, –20 A 0 40 80 120 160 Case Temperature TC (°C) Pulse Test VDS = –10 V Tc = 25°C –25°C 75°C 10 5 2 1 –0.5 –1 –2 –5 –10 –20 Drain Current I D (A) –50 2SJ280 L , 2SJ280 S Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain-Source Voltage 10000 Ciss C (pF) 200 100 50 20 di/dt = 50 A/ µ s, VGS = 0 Ta = 25°C 10 5 –1 Crss 100 VGS = 0, f = 1 MHz 10 0 –2 –5 –10 –20 –50 –100 Reverse Drain Current I DR (A) –60 –80 –100 0 VDD = –10 V –25 V –50 V –4 VDS –8 VDD = –10 V –25 V –50 V I D = –30 A 40 80 120 160 Gate Charge Qg (nc) –12 VGS –16 –20 200 td(off) Switching Time t (ns) –40 –40 –50 VDS (V) 1000 0 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) –20 –10 –20 –30 Drain to Source Voltage Switching Characteristics Dynamic Input Characteristics 0 Coss 1000 Capacitance Reverse Recovery Time t rr (ns) 500 500 tf 200 100 tr 50 td(on) 20 10 –0.5 –1 VGS = –10 V, VDD =: –30 V PW = 2 µs, duty < = 1% –2 –5 –10 –20 Drain Current I D (A) –50 2SJ280 L , 2SJ280 S Maxmum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current vs. Source to Drain Voltage Repetive Avaranche Energy E AR (mJ) Reverse Drain Current I DR (A) –50 Pulse Test –40 VGS = –10 V –30 –20 –5 V 0, 5V –10 0 0 100 I AP = –30 A VDD = –25 V duty < 0.1% Rg > = 50 Ω 80 60 40 20 0 25 –0.4 –0.8 –1.2 –1.6 –2.0 Source to Drain Voltage VSD (V) 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit and Waveform VDS Monitor Rg Vin –15 V VDSS E AR = 1 • L • I AP 2 • 2 VDSS – VDD L I AP Monitor D.U.T V(BR)DSS I AP VDD ID 50 Ω 0 VDD VDS 2SJ290 Silicon P-Channel MOS FET Application TO–220AB High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 2 1 1. Gate 2. Drain 3. Source 1 2 3 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ———————————————————————————————————————————– Drain to source voltage VDSS –60 V ———————————————————————————————————————————– Gate to source voltage VGSS ±20 V ———————————————————————————————————————————– Drain current ID –15 A ———————————————————————————————————————————– Drain peak current ID(pulse)* –60 A ———————————————————————————————————————————– Body–drain diode reverse drain current IDR –15 A ———————————————————————————————————————————– Avalanche current IAP*** –15 A ———————————————————————————————————————————– Avalanche energy EAR*** 19 mJ ———————————————————————————————————————————– Channel dissipation Pch** 50 W ———————————————————————————————————————————– Channel temperature Tch 150 °C ———————————————————————————————————————————– Storage temperature Tstg –55 to +150 °C ———————————————————————————————————————————– * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω