HITACHI 2SK3070S

2SK3070(L),2SK3070(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-684G (Z)
8th. Edition
February 1999
Features
• Low on-resistance
R DS(on) = 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
D
1
1
G
S
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
Datasheet Title
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
40
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
75
A
300
A
75
A
50
A
333
mJ
100
W
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Avalanche current
Avalanche energy
I AP
Note 1
Note 3
EAR
Note 3
Note 2
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Datasheet Title
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
40
—
—
V
I D = 10 mA, VGS = 0
Gate to source leak current
I GSS
—
—
±0.1
µA
VGS = ±20 V, VDS = 0
Zero gate voltege drain current
I DSS
—
—
10
µA
VDS = 40 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
I D = 1 mA, VDS = 10 V Note1
Static drain to source on state
RDS(on)
—
4.5
5.8
mΩ
I D = 40 A, VGS = 10 V Note1
—
6.5
10
mΩ
I D = 40 A, VGS = 4 V Note1
resistance
Forward transfer admittance
|yfs|
50
80
—
S
I D = 40 A, VDS = 10 V Note1
Input capacitance
Ciss
—
6800
—
pF
VDS = 10 V
Output capacitance
Coss
—
1300
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
380
—
pF
f = 1 MHz
Total gate charge
Qg
—
130
—
nc
VDD = 25 V
Gate to source charge
Qgs
—
25
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
30
—
nc
I D = 75 A
Turn-on delay time
t d(on)
—
60
—
ns
VGS = 10 V, ID = 40 A
Rise time
tr
—
300
—
ns
RL = 0.75 Ω
Turn-off delay time
t d(off)
—
550
—
ns
Fall time
tf
—
400
—
ns
Body–drain diode forward voltage
VDF
—
1.05
—
V
I F = 75 A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
90
—
ns
I F = 75 A, VGS = 0
diF/ dt = 50 A/ µs
Note:
1. Pulse test
3
Datasheet Title
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
I D (A)
150
Drain Current
Channel Dissipation
Pch (W)
200
100
50
100
30
10
3
1
50
100
Case Temperature
150
200
Tc (°C)
=
10
DC ms
Op (1
s
e
(T rati hot)
c = on
25
Operation in
°C
)
this area is
limited by R DS(on)
Typical Transfer Characteristics
100
4V
3.5 V
5V
Pulse Test
VGS = 10 V
ID
60
(A)
80
Drain Current
I D (A)
PW
0.1 Ta = 25°C
3
30
0.1 0.3
1
10
100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
100
Drain Current
10
0.3
0
3V
40
20
80
0
2
4
6
Drain to Source Voltage
8
V DS (V)
10
V DS = 10 V
Pulse Test
60
40
20
2.5 V
4
10
µ
0µ s
s
1
m
s
300
0
75°C
25°C
Tc = –25°C
1
2
3
Gate to Source Voltage
4
5
V GS (V)
Datasheet Title
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.4
0.3
I D = 50 A
0.2
20 A
0.1
10 A
0
Static Drain to Source on State Resistance
R DS(on) (mΩ )
Drain to Source On State Resistance
R DS(on) (m Ω )
Pulse Test
12
4
8
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
8
4
0
–50
I D = 50 A
VGS = 10 V
10, 20 A
10, 20, 50 A
4V
0
50
100
Case Temperature
100
Pulse Test
50
20
10
150
Tc
(°C)
200
VGS = 4 V
5
10 V
2
1
1
16
20
V GS (V)
3
10
30 100 300 1000
Drain Current I D (A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |y fs | (S)
Drain to Source Saturation Voltage
V DS(on) (V)
0.5
Static Drain to Source on State Resistance
vs. Drain Current
500
200
V DS = 10 V
Pulse Test
100
Tc = –25 °C
50
20
10
25 °C
5
75 °C
2
1
0.5
0.1
0.3
1
3
10
30
100
Drain Current I D (A)
5
Datasheet Title
Body–Drain Diode Reverse
Recovery Time
30000
VGS = 0
f = 1 MHz
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
20
10
0.1
10000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
40
20
0
V DS
12
8
V DD = 40 V
25 V
10 V
80
160
240
320
Gate Charge Qg (nc)
4
0
400
V GS (V)
16
Crss
10
20
30
40
50
Switching Characteristics
t d(off)
500
Switching Time t (ns)
V DD = 40 V
25 V
10 V
60
1000
Gate to Source Voltage
V DS (V)
Drain to Source Voltage
V GS
Coss
1000
Drain to Source Voltage V DS (V)
20
80
3000
100
0
0.3
1
3
10
30
100
Reverse Drain Current I DR (A)
I D = 75 A
Ciss
300
Dynamic Input Characteristics
100
6
Typical Capacitance vs.
Drain to Source Voltage
tf
200
tr
100
t d(on)
50
20
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
10
0.1 0.2 0.5 1
2
Drain Current
5 10 20
I D (A)
50 100
Datasheet Title
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy E AR (mJ)
Maximun Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current I DR (A)
100
10 V
80
5V
60
V GS = 0, –5 V
40
20
Pulse Test
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
2.0
500
I AP = 50 A
V DD = 25 V
duty < 0.1 %
Rg > 50 Ω
400
300
200
100
0
25
V SD (V)
50
100
125
150
Channel Temperature Tch (°C)
Avalanche Test Circuit
V DS
Monitor
75
Avalanche Waveform
EAR =
L
1
2
• L • I AP •
2
I AP
Monitor
VDSS
VDSS – V DD
V (BR)DSS
I AP
Rg
D. U. T
V DS
VDD
ID
Vin
15 V
50Ω
0
VDD
7
Datasheet Title
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 1.25 °C/W, Tc = 25 °C
0.1
0.05
PDM
0.02
1
lse
0.0 t pu
o
h
1s
0.03
0.01
10 µ
D=
PW
T
PW
T
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
Vin
Vin
10 V
50Ω
V DD
= 30 V
Vout
10%
10%
90%
td(on)
8
tr
10%
90%
td(off)
tf
Datasheet Title
Package Dimensions
1.2 ± 0.2
0.4 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
L type
2.54 ± 0.5
(1.4)
(1.5)
(1.5)
1.27 ± 0.2
3.0 +0.3
–0.5
2.59 ± 0.2
4.44 ± 0.2
8.6 ± 0.3
10.0 +0.3
–0.5
10.2 ± 0.3
1.27 ± 0.2
0.76 ± 0.1
1.3 ± 0.2
11.3 ± 0.5
4.44 ± 0.2
11.0 ± 0.5
1.2 ± 0.2
0.86 +0.2
–0.1
8.6 ± 0.3
10.0 +0.3
–0.5
(1.5)
10.2 ± 0.3
(1.4)
Unit: mm
1.3 ± 0.2
0.1 +0.2
–0.1
2.59 ± 0.2
0.4 ± 0.1
0.86 +0.2
–0.1
2.54 ± 0.5
S type
Hitachi Code
EIAJ
JEDEC
LDPAK
—
—
9
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