Phototransistors PNZ109CL (PN109CL) Silicon NPN Phototransistor Unit : mm 3.0±0.3 For optical control systems 12.7 min. 2.0±0.1 0.2±0.05 Features High sensitivity : ICE(L) = 2 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use 3-ø0.45±0.05 Fast response : tr = 5 µs (typ.) 2.54±0.25 1. Signal mixing capability using base pin 1. 0± 15 0. 0. 15 0± Small size (low in height) package ø5.75 max. ø4.2±0.2 3˚ 45± Resin to cutoff visible light is used 3 1 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO 5 V Collector current IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 2.5 Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 500 lx*1 typ max 0.05 2 4 Unit µA mA Peak sensitivity wave length λP VCE = 10V 900 nm Acceptance half angle θ Measured from the optical axis to the half power point 80 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 5 µs Fall time tf*2 RL = 100Ω 6 µs Collector saturation voltage VCE(sat) ICE(L) = 1mA, L = 1000 lx*1 0.3 0.6 V *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ;;;; ;; 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. 1 Phototransistors PNZ109CL ICE(L) — VCE 80 60 40 20 Ta = 25˚C T = 2856K ICE(L) — L 16 VCE = 10V Ta = 25˚C T = 2856K 10 3 500 lx 300 lx 200 lx 12 Collector photo current ICE(L) (mA) 100 Collector photo current PC (mW) Collector power dissipation 20 ICE(L) (mA) PC — Ta 120 100 lx 8 50 lx 4 10 2 10 1 10 –1 L = 10 lx 0 20 40 60 Ambient temperature 80 0 100 Ta (˚C ) 0 4 8 12 ICEO — Ta 10 –2 40 60 Ambient temperature 80 1 Ta (˚C ) 80 60 40 0 600 120 700 800 900 1000 1100 1200 Wavelength λ (nm) Ta (˚C ) tf — ICE(L) VCC = 10V Ta = 25˚C 10 4 50˚ 10 3 60˚ 70˚ 80˚ 90˚ tr (µs) 20 80 VCC = 10V Ta = 25˚C 10 4 Rise time 40 Relative sensitivity S (%) 60 VCE = 10V Ta = 25˚C tr — ICE(L) 30˚ 40˚ 100 80 20˚ 40 10 3 tf (µs) 10˚ 0 Ambient temperature Directivity characteristics 0˚ 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 1 1 10 –1 10 –2 10 –1 1 Collector photo current 2 10 4 20 10 –1 – 40 100 10 3 L (lx) Spectral sensitivity characteristics 100 Relative sensitivity 10 –1 10 2 10 Illuminance S (%) ICE(L) (mA) 1 Collector photo current Dark current ICEO (µA) 10 1 VCE (V) VCE = 10V L = 100 lx T = 2856K VCE = 10V 20 10 –2 24 ICE(L) — Ta 10 0 20 Collector to emitter voltage 10 2 10 –3 – 20 16 Fall time 0 – 20 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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