2SK359 Silicon N-Channel MOS FET Application VHF amplifier Outline TO-92 (2) 1. Gate 2. Source 3. Drain 3 2 1 2SK359 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Ratings Unit 20 V Drain to source voltage VDSX* Gate to source voltage VGSS ±5 V Drain current ID 30 mA Gate current IG ±1 mA Channel power dissipation Pch 400 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. VGS = –4 V Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSX 20 — — V I D = 100 µA, VGS = –4 V Gate cutoff current I GSS — — ±20 nA VGS = ±5 V, VDS = 0 4 — 12 mA VDS = 10 V, VGS = 0 1 Drain current I DSS* Gate to source cutoff voltage VGS(off) 0 — –2.0 V VDS = 10 V, ID = 10 µA Forward transfer admittance y fs 8 14 — mS VDS = 10 V, VGS = 0, f = 1 kHz Input capacitance Ciss — 2.5 — pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 1.6 — pF Reverse transfer capacitance Crss — 0.03 — pF Power gain PG — 30 — dB Noise figure NF — 2 — dB Note: 1. The 2SK359 is grouped by I DSS as follows. D E F 4 to 8 6 to 10 8 to 12 2 VDS = 10 V, VGS = 0, f = 100 MHz 2SK359 Typical Output Characteristics 10 600 VGS = 0 V Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Dissipation Curve 400 200 6 –0.4 2 –0.5 –0.6 –0.7 –0.8 Forward Transfer Admittance yfs (mS) Drain Current ID (mA) VDS = 10 V 8.0 F 6.0 E D 2.0 –1.6 –1.2 –0.8 –0.4 Gate to Source Voltage VGS (V) 2 4 6 8 Drain to Source Voltage VDS (V) 10 Forward Transfer Admittance vs. Drain to Source Voltage 10.0 0 –2.0 –0.2 4 Typical Transfer Characteristics 4.0 –0.1 –0.3 0 50 100 150 Ambient Temperature Ta (°C) 0 8 0 20 16 12 8 4 0 VGS = 0 f = 1 kHz 2 4 6 8 Drain to Source Voltage VDS (V) 10 3 2SK359 Input Capacitance vs. Drain to Source Voltage 20 100 50 VDS = 10 V f = 1 kHz Input Capacitance Ciss (pF) Forward Transfer Admittance yfs (mS) Forward Transfer Admittance vs. Drain Current 20 10 5 2 1 0.2 0.5 1.0 2 5 10 Drain Current ID (mA) 10 5 2 1.0 0.5 0.5 20 4 0.5 20 VGS = 0 f = 1 MHz 0.1 0.05 0.02 0.01 0.5 1.0 2 5 10 20 Drain to Source Voltage VDS (V) Output Capacitance vs. Drain to Source Voltage 1.0 2 5 10 20 Drain to Source Voltage VDS (V) Output Capacitance Coss (pF) Reverse Transfer Capacitance Crss (pF) Reverse Transfer Capacitance vs. Drain to Source Voltage 0.2 VGS = 0 f = 1 MHz VGS = 0 f = 1 MHz 10 5 2 1.0 0.5 0.5 1.0 2 5 10 Drain to Source Voltage VDS (V) 20 2SK359 Power Gain, Noise Figure vs. Drain to Source Voltage 35 PG 25 f = 100 MHz 20 6 15 4 NF 10 5 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Noise Figure NF (dB) Power Gain PG (dB) 30 2 0 12 5 Unit: mm 4.8 ± 0.3 2.3 Max 0.7 0.60 Max 0.45 ± 0.1 12.7 Min 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. 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