ROHM RF05VA1S_11

Data Sheet
Fast Recovery Diode
RF05VA1S
lApplications
General rectification
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
1.1
0.17±0.1
0.05
1.9±0.1
2.5±0.2
lFeatures
1)Small mold type. (TUMD2)
2)Ultra high switching speed
3)Low VF
0.8 0.5
2.0
1.3±0.05
TUMD2
lConstruction
Silicon epitaxial planer
lStructure
0.8±0.05
0.6±0.2
ROHM : TUMD2
0.1
dot (year week factory) + day
lTaping dimensions (Unit : mm)
8.0±0.2
2.75
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
Average rectified forward current (*1)
Io
IFSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
Tstg
(*1)On the Glass epoxy substrate
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
φ 1.0±0.2
0
4.0±0.1
1.43±0.05
Limits
100
100
0.5
6
150
0.9±0.08
Unit
V
V
A
A
C
C
-55 to +150
Min.
Typ.
Max.
Unit
-
-
0.98
V
IF=0.5A
VR=100V
IF=0.5A,IR=1A,Irr=0.25*IR
Reverse current
IR
-
-
10
μA
Reverse recovery time
trr
-
-
25
ns
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2.8±0.05
0.25±0.05
1.75±0.1
φ 1.55±0.1
0
2.0±0.05
3.5±0.05
4.0±0.1
1/4
Conditions
2011.10 - Rev.A
Data Sheet
RF05VA1S
10
1000
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(A)
Tj=150°C
Tj=150°C
1
Tj=125°C
Tj=25°C
0.1
Tj=125°C
100
Tj=75°C
10
Tj=25°C
1
Tj=75°C
0
0.01
0
300 400 500 600 700 800 900 1000 1100 1200 1300
20
40
60
100
100
850
f=1MHz
IF=0.5A
FORWARD VOLTAGE:VF(mV)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
10
840
830
820
AVE:819.3mV
810
1
800
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
1
AVE:0.80nA
Ta=25°C
29
VR=100V
n=20pcs
28
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
10
27
f=1MHz
VR=0V
AVE:28.18pF
26
25
24
23
22
21
0.1
20
IR DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.10 - Rev.A
Data Sheet
RF05VA1S
30
25
1cyc
IFSM
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
30
8.3ms
20
15
10
AVE:12.2A
5
0
IF=0.5A
IR=1A
Irr=0.25×IR
25
20
15
10
AVE:12.2ns
5
0
trr DISPERSION MAP
IFSM DISPERSION MAP
100
100
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
10
1
IFSM
10
1
1
10
100
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
0.9
Rth(j-a)
On glass-epoxy substrate
soldering land 6mm□
0.8
100
Rth(j-l)
Rth(j-a)
On glass-epoxy substrate
soldering land 10mm□
10
D.C.
D=0.8
0.7
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
t
0.6
D=0.5
half sin wave
0.5
0.4
D=0.2
D=0.1
0.3
D=0.05
0.2
0.1
1
0.001
0
0.1
10
0
1000
TIME:t(s)
Rth-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
0.2
0.4
0.6
0.8
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
1
2011.10 - Rev.A
1.2
1.2
T
0.6
0.4
half sin wave
D=0.2
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
VR
0.8
D=0.8
D=0.5
VR
t
1
t
D.C.
Io
0A
0V
Io
0A
0V
1
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
RF05VA1S
D=t/T
VR=150V
Tj=150°C
D=0.1
0.2
T
D.C.
0.8
D=t/T
VR=150V
Tj=150°C
D=0.8
0.6
D=0.5
0.4
half sin wave
D=0.2
D=0.1
0.2
D=0.05
D=0.05
0
0
0
30
60
90
120
150
0
30
60
90
120
150
CASE TEMPERATURE:Tc(°C)
DERATING CURVE (Io-Tc)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(kV)
25
20
15
10
AVE:13.3kV
5
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A