ROHM RSD080N06

Data Sheet
4V Drive Nch MOSFET
RSD080N06
 Structure
Silicon N-channel MOSFET
 Dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
0.9
1.5
5.5
Features
1) Low on-resistance.
2) 4V drive.
3) High power package(CPT3).
2.5
0.75
9.5
1.5
(SC-63)
<SOT-428>
(1)
(2)
(3)
0.8Min.
0.65
0.9 2.3
2.3
0.5
1.0
 Application
Switching
 Packaging specifications
Package
Code
Basic ordering unit (pieces)
RSD080N06
Type
 Inner circuit
Taping
TL
2500

∗1
∗2
(1) Gate
(2) Drain
(3) Source
 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
VDSS
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VGSS
ID
IDP *1
IS
ISP
PD
*1
Limits
Unit
60
20
8
V
V
A
16
8
16
A
A
A
15
W
Tch
Tstg
150
55 to 150
C
C
Symbol
Rth (ch-c)*
Limits
8.33
Unit
C / W
*2
(1)
(2)
(3)
1 ESD PROTECTION DIODE
2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 TC=25C
 Thermal resistance
Parameter
Channel to Case
* T C=25C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.08 - Rev.A
Data Sheet
RSD080N06
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
IGSS
Drain-source breakdown voltage V(BR)DSS
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
60
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=60V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
*
RDS (on)
-
57
80
ID=8A, VGS=10V
Forward transfer admittance
l Yfs l*
4.8
-
-
S
VDS=10V, ID=8A
Input capacitance
Ciss
-
380
-
pF
VDS=10V
Output capacitance
Coss
-
90
-
pF
VGS=0V
Zero gate voltage drain current
-
70
98
m ID=8A, VGS=4.5V
-
78
109
ID=8A, VGS=4.0V
Reverse transfer capacitance
Crss
-
50
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
9
-
ns
VDD 30V, ID=4A
Rise time
tr *
td(off) *
-
13
-
ns
VGS=10V
-
30
-
ns
RL=7.5
tf *
-
10
-
ns
RG=10
Total gate charge
Qg *
-
9.4
-
nC
VDD 30V, ID=8A
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
1.8
2.3
-
nC
nC
VGS=10V
Min.
Typ.
Max.
-
-
1.5
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
VSD *
Unit
V
Conditions
Is=8A, VGS=0V
*Pulsed
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.08 - Rev.A
Data Sheet
RSD080N06
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
8
8
Ta=25°C
pulsed
VGS=10.0V
VGS=10.0V
VGS=4.5V
6
Drain Current : ID [A]
VGS=4.0V
Drain Current : ID [A]
VGS=4.5V
6
4
2
VGS=4.0V
4
VGS=3.0V
2
VGS=3.0V
0
0
0
0.2
0.4
0.6
0.8
1
0
2
Drain-Source Voltage : VDS [V]
6
8
10
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=10V
pulsed
Ta=25°C
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
4
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
VGS=4.0V
VGS=4.5V
VGS=10V
100
10
1
0.01
0.1
1
10
100
10
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Drain Current : ID [A]
1
10
100
Drain Current : ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
1000
1000
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
100
10
1
0.01
0.1
1
10
10
0.1
1
10
100
Drain Current : ID [A]
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
100
1
0.01
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
3/6
2011.08 - Rev.A
Data Sheet
RSD080N06
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
100
100
VDS=10V
pulsed
VDS=10V
pulsed
Drain Currnt : ID [A]
Forward Transfer Admittance
Yfs [S]
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
1
0.1
0.1
0.01
0.01
0.01
0.001
0.1
1
10
100
0.0
1.0
Drain Current : ID [A]
Fig.9 Source Current vs. Source-Drain Voltage
4.0
5.0
300
VGS=0V
pulsed
Static Drain-Source On-State Resistance
RDS(on) [mΩ]
Ta=25°C
pulsed
10
Source Current : Is [A]
3.0
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
250
ID=8.0A
200
ID=4.0A
150
100
50
0
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
10000
10
10
VDD≒30V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
Ta=25°C
VDD=30V
ID=8A
Pulsed
8
Gate-Source Voltage : VGS [V]
1000
Switching Time : t [ns]
2.0
Gate-Source Voltage : VGS [V]
tf
td(off)
100
tr
6
4
10
2
td(on)
1
0
0.01
0.1
1
10
0
Drain Current : ID [A]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2
4
6
8
10
Total Gate Charge : Qg [nC]
4/6
2011.08 - Rev.A
Data Sheet
RSD080N06
Fig.13 Typical Capacitance vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Area
10000
100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
Ta=25°C
f=1MHz
VGS=0V
10
Drain Current : ID [ A ]
Capacitance : C [pF]
1000
Ciss
100
Crss
10
PW = 100μs
1
PW = 1ms
PW = 10ms
0.1
Coss
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
1
0.01
0.01
0.1
1
10
100
0.1
1
10
100
Drain-Source Voltage : VDS [ V ]
Drain-Source Voltage : VDS [V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
Normalized Transient Thermal Resistance : r(t)
10
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
0.0001
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=47.4°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.08 - Rev.A
Data Sheet
RSD080N06
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
IG(Const.)
D.U.T.
Qg
VGS
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Fig.2-2 Gate Charge Waveform
6/6
2011.08 - Rev.A
Notice
Notes
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A