Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-2500 MHz, Silicon Germanium Cascadeable Gain Block This circuit uses a Darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 Ohm impedance, the SGA-4563 requires only DC blocking and bypass capacitors for external components. Product Features DC-2500 MHz Operation Single Voltage Supply Low Current Draw: 45mA at 3.5V typ. High Output Intercept: 26 dBm typ. at 1950MHz Small Signal Gain vs. Frequency 30 dB 20 10 Applications Oscillator Amplifiers Broadband Gain Blocks IF/RF Buffer Amplifiers 25C -40C 85C 0 0.1 1 1.9 2.8 3.7 4.6 Frequency GHz Sy mbol Parameters: Test C onditions: Z0 = 50 Ohms, ID = 45 mA, T = 25ºC U nits Min. Ty p. Output Power at 1dB C ompressi on f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 15.0 12.8 11.6 IP3 Thi rd Order Intercept Poi nt Power out per tone = -10 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dB m dB m dB m 27.1 26.2 25.3 S 21 Small Si gnal Gai n f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 25.5 20.0 18.5 MHz 2500 P 1dB Bandwi dth Input and Output VSWR: Mi ni mum 2:1 S11 Input VSWR f = 1950 MHz - 1.2:1 S 22 Output VSWR f = 1950 MHz - 1.9:1 S 12 Reverse Isolati on f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 28.0 24.5 23.0 NF Noi se Fi gure f = 1950 MHz dB 2.4 VD D evi ce Voltage V 3.5 ºC /W 255 Rth, j-l Thermal Resi stance (juncti on - lead) Max. The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101803 Rev. A Preliminary Preliminary SGA-4563 DC-2.5 GHz 3.5V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Parameter Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Value Unit Supply Current 90 mA Device Voltage 6 V -40 to +85 ºC +10 dBm Operating Temperature Maximum Input Pow er Storage Temperature Range Operating Junction Temperature -40 to +150 ºC +150 ºC Key parameters, at typical operating frequencies: Parameter Ty pical 25ºC Test Condition Unit 100 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 28.7 27.0 15.7 19.2 30.5 1.9 dB dBm dBm dB dB dB 500 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 27.4 26.2 15.0 20.7 29.7 1.9 dB dBm dBm dB dB dB 850 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 25.6 27.1 15.0 24.5 28.7 1.9 dB dBm dBm dB dB dB 1950 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation Noise Figure 20.2 26.2 12.8 19.9 24.5 2.4 dB dBm dBm dB dB dB 2400 MHz Gain Output IP3 Output P1dB Input Return Loss Reverse Isolation 18.6 25.3 11.6 16.5 23.0 dB dBm dBm dB dB 726 Palomar Ave., Sunnyvale, CA 94085 (ID = 45mA, unless otherwise noted) Tone spacing = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Tone spacing = 1 MHz, Pout per tone = -10dBm Zs = 50 Ohms Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101803 Rev A Preliminary Preliminary SGA-4563 DC-2.5 GHz 3.5V SiGe Amplifier Pin # 1 Function Description GND Connection to ground. For best performance use via holes (as close to ground leads as possible) to reduce lead inductance. GND Same as Pin 1 RF IN RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Same as Pin 1 GND Same as Pin 1 RF OUT RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of this bias netw ork should be w ell bypassed. 2 3 4 5 6 Device Schematic Application Schematic Recommended 1% Bias Resistor Values Supply Voltage(Vs) 5V 8.0V 9V 12V Rbias (Ohms) 33.2 100 121 187 Cd1 Cd2 R bias Vs Note: A bias resistor is needed for stability over temperature. Lchoke 50 ohm microstrip 50 ohm microstrip 1,2 3 6 Cb1 Cb2 4,5 R eference D esignator Function 500 MH z 850 MH z 1950 MH z 2400 MH z C b1 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C b2 D C Blocki ng 220 pF 100 pF 68 pF 56 pF C d1 D ecoupli ng 1 uF 1 uF 1 uF 1 uF C d2 D ecoupli ng 100 pF 68 pF 22 pF 22 pF Lchoke AC Blocki ng 68 nH 33 nH 22 nH 18 nH 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101803 Rev A Preliminary Preliminary SGA-4563 DC-2.5 GHz 3.5V SiGe Amplifier S21 vs. Temperature, ID = 45mA 30 S12 vs. Temperature, ID = 45mA 0 20 dB dB -10 10 -20 25C -40C 85C 0 25C -40C 85C -30 0.1 1 1.9 2.8 3.7 4.6 0.1 1 1.9 GHz S11 vs. Temperature, ID = 45mA 0 3.7 4.6 S22 vs. Temperature, ID = 45mA 0 -10 dB -10 dB 2.8 GHz -20 25C -40C 85C -30 -20 25C -40C 85C -30 -40 -40 0.1 1 1.9 2.8 3.7 4.6 0.1 1 1.9 GHz IP3 vs. Temperature, ID = 45mA 40 2.8 3.7 4.6 GHz P1dB vs. Temperature, ID = 45mA 20 15 dBm dBm 30 20 25C 10 10 25C 5 -40C -40C 85C 0 85C 0 0.1 1 1.9 2.8 3.7 0.1 GHz 726 Palomar Ave., Sunnyvale, CA 94085 1 1.9 2.8 3.7 GHz Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101803 Rev A Preliminary Preliminary SGA-4563 DC-2.5 GHz 3.5V SiGe Amplifier Caution: ESD sensitive Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. 6 5 1 2 Reel Size Devices/Reel SGA-4563 7" 3000 4 Note: Pin 1 is on lower left when you can read package marking A45 Package Marking Part Number 3 Package Dimensions Pad Layout 0.026 1.30 (0.051) REF. 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 0.075 0.035 0.650 BSC (0.025) 2.20 (0.087) 1.80 (0.071) 0.016 0.425 (0.017) TYP. 0.10 (0.004) 0.00 (0.00) 1.00 (0.039) 0.80 (0.031) 0.20 (0.0080 0.10 (0.004) 0.30 REF. 0.25 (0.010) 0.15 (0.006) 10° 0.30 (0.012) 0.10 (0.0040 DIMENSIONS ARE IN INCHES [MM] 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101803 Rev A