SKM 75GB123D - 3 04 5)! " Absolute Maximum Ratings Symbol Conditions IGBT )6 -7 3 04 5) %) -7 3 .4/ 5) %); .0// 94 * - 3 :/ 5) #/ * .4/ * = 0/ -7 3 .04 5) ./ A - 3 04 5) 94 * - 3 :/ 5) 4/ * .4/ * -7 3 .4/ 5) C:/ * - 3 04 5) D4 * <6 SEMITRANS® 2 )) 3 #// > <6 ? 0/ > )6 @ .0// Inverse Diode %' IGBT Modules SKM 75GB123D -7 3 .4/ 5) %'; %';30$%' %' 3 ./ > B Freewheeling Diode SKM 75GAL123D %' -7 3 .4/ 5) %'; %';30$%' %' 3 ./ > - 3 :/ 5) #4 * 0// * 90/ * 0// * -7 & C/ BBBE .4/ 5) - & C/ BBBE .04 5) 04// SKM 75GAR123D Features ! " # $ % & " ' ( " )* % +), + ) , - ./ 0/ -7 3 .4/ 5) Module %; *)! . B - 3 04 5)! " Characteristics Symbol Conditions IGBT <6 <6 3 )6! %) 3 0 * %)6 <6 3 / ! )6 3 )6 )6/ )6 Typical Applications *) 12 <6 3 .4 -7 3 04 5) max. Units C!4 4!4 #!4 /!. /!F * .!C .!# -7 3 .04 5) .!# .!: -7 3 045) 00 0: G -7 3 .045) F/ F: G %) 3 4/ *! <6 3 .4 -7 3 5) B 0!4 F ) ) )6 3 04! <6 3 / " 3 . H F!F /!4 C!F /!# ' ' /!00 /!F ' I< <6 3 &: & E0/ ;< -7 3 5) ;< 3 00 G ;<"" 3 00 G 6"" ;7& 1 typ. )6 6 "" " GAL min. -7 3 04 5) ) GB Units - 3 04 5) %);30$%) Values )) 3 #// %)3 4/* -7 3 .04 5) <6 3 =.4 4// ) 4 J CC 4# : F:/ 9/ .// .// 4// .// 4 %<,- K K /!09 LMN GAR 11-09-2006 RAA © by SEMIKRON SKM 75GB123D Characteristics Symbol Conditions Inverse Diode ' 3 6) %' 3 4/ *> <6 3 / '/ min. typ. max. Units -7 3 04 5) B 0 0!4 -7 3 .04 5) B .!: -7 3 04 5) .!. .!0 -7 3 .04 5) ' -7 3 04 5) .: 0# -7 3 .04 5) ® SEMITRANS 2 IGBT Modules %;; I %' 3 4/ * M 3 :// *MA 6 <6 3 / > )) 3 #// ;7&+ SKM 75GB123D %' 3 4/ *> <6 3 / '/ G -7 3 .04 5) F4 * A) K /!# LMN 0!0 -7 3 04 5) B .!:4 -7 3 .04 5) B .!# -7 3 04 5) .!. .!0 .4 0/ -7 3 .04 5) SKM 75GAL123D ' SKM 75GAR123D Features ! " # $ % & " ' ( " )* % +), + ) , - ./ 0/ Typical Applications *) 12 GB 2 GAL %;; I %' 3 4/ * 6 <6 3 / > )) 3 #// ;7&'+ -7 3 04 5) -7 3 .04 5) G Freewheeling Diode ' 3 6) -7 3 .04 5) C/ * A) K /!4 LMN Module )6 ;))OE66O F/ B! & ;& P # 4 -3 04 5) /!94 G -3 .04 5) . G /!/4 LMN F 4 Q 0!4 4 Q .#/ This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GAR 11-09-2006 RAA © by SEMIKRON SKM 75GB123D ® SEMITRANS 2 Zth Symbol Zth(j-c)l Conditions Values Units ; ; ; ; 3. 30 3F 3C 3. 30 3F .:/ #C 00 C /!/F09 /!/C9D /!//: PMN PMN PMN PMN 3C /!//4 ; ; ; ; 3. 30 3F 3C 3. 30 3F F:/ .D/ 0# C /!/DC9 /!//# /!/: PMN PMN PMN PMN 3C /!//F Zth(j-c)D IGBT Modules SKM 75GB123D SKM 75GAL123D SKM 75GAR123D Features ! " # $ % & " ' ( " )* % +), + ) , - ./ 0/ Typical Applications *) 12 GB 3 GAL GAR 11-09-2006 RAA © by SEMIKRON SKM 75GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 11-09-2006 RAA © by SEMIKRON SKM 75GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode reverse recovery charge 5 11-09-2006 RAA © by SEMIKRON SKM 75GB123D UL Recognized File 63 532 ) + #. <, 6 ) + #. <* ) + #0 R + #. 11-09-2006 RAA <*; ) + #F R + #. © by SEMIKRON