SECOS SMG3407

SMG3407
-4.1A, -30V,RDS(ON) 52mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A
Description
SC-59
L
The SMG 3407 uses advanced trench technology to
provide excellent on-resistance with low gate change.
S
2
3
Top View
B
1
The device is suitable for use as a load switch or in
PWM applications.
D
G
Features
* Lower Gate Charge
* Small Package Outline
J
C
K
H
Drain
* RoHS Compliant
Gate
Source
D
Dim
Min
Max
A
2.70
3.10
B
1.40
1.60
C
1.00
1.30
D
0.35
0.50
G
1.70
2.10
H
0.00
0.10
J
0.10
0.26
K
0.20
0.60
L
0.85
1.15
S
2.40
2.80
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
1
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Unit
V
V
A
A
A
W
W/
Tj, Tstg
Ratings
-30
±20
-4.1
-3.5
-20
1.38
0.01
-55 ~ +150
Symbol
Rthj-a
Ratings
90
Unit
/W
Thermal Data
Parameter
3
Thermal Resistance Junction-ambient Max.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 4
SMG3407
-4.1A, -30V,RDS(ON) 52mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
-30
-
-
V
VGS=0, ID=-250uA
Gate Threshold Voltage
VGS(th)
-1.0
-
-3.0
V
VDS=VGS, ID=-250uA
gfs
-
8.2
-
S
VDS=-5V, ID=-4A
IGSS
-
-
±100
nA
VGS= ±20V
-
-
-1
uA
VDS=-30V, VGS=0
-
-
-5
uA
VDS=-24V, VGS=0
-
-
52
-
-
87
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
m
Test Conditions
VGS=-10V, ID=-4.1A
VGS=-4.5V, ID=-3.0A
Total Gate Charge2
Qg
-
7
-
Gate-Source Charge
Qgs
-
3.1
-
Gate-Drain (“Miller”) Change
Qgd
-
3
-
Td(on)
-
8.6
-
Tr
-
5
-
Td(off)
-
28.2
-
Tf
-
13.5
-
Input Capacitance
Ciss
-
700
840
Output Capacitance
Coss
-
120
-
Reverse Transfer Capacitance
Crss
-
75
-
Rg
-
10
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
-1.0
V
IS=-1.0A, VGS=0V
Reverse Recovery Time
Trr
-
27
-
ns
Reverse Recovery Charge
Qrr
-
15
-
nC
IS=-4A, VGS=0V
dI/dt=100A/ s
Continuous Source Current (Body Diode)
IS
-
-
-2.2
A
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
ID=-4A
VDS=-15V
VGS=-4.5V
ns
VDS=-15V
VGS=-10V
RG=3
RL=3.6
pF
VGS=0V
VDS=-15V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
2
Test Conditions
VD=VG=0V, VS=-1.0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 270 /W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SMG3407
-4.1A, -30V,RDS(ON) 52mΩ
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1
0.1
0.01
0.001
0.0001
0.00001
0.000001
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SMG3407
-4.1A, -30V,RDS(ON) 52mΩ
Elektronische Bauelemente
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
P-Channel Enhancement Mode Power Mos.FET
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
Fig 10. Typical Capacitance Characteristics
Fig 11. Normalized Maximum Transient Thermal Impedance
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 4 of 4