Product Description SPA-2118 Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 850 MHz 1 Watt Power Amplifier with Active Bias This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 850 MHz band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. +20.7 dBm IS-95 CDMA Channel Power at -55 dBc ACP +47 dBm typ. OIP3 VC1 VBIAS Product Features • High Linearity Performance: Active Bias RFIN RFOUT/ VC2 VPC2 • On-chip Active Bias Control • High Gain: 33 dB Typ. • Patented High Reliability GaAsHBT Technology • Surface-Mountable Plastic Package Applications • IS-95 CDMA Systems • Multi-Carrier Applications • AMPS, ISM Applications Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, VCC= 5.0V Units Min. Typ. Max. Frequency of Operation MHz 810 900 960 P 1dB Output Power at 1dB Compression dB m 29.0 AC P Adjacent Channel Power IS-95 @880 MHz, ±885 KHz offset, POUT=20.7 dBm dB c -55.0 -52.0 Small Signal Gain, 880 MHz dB 33.0 34.5 Symbol f0 S 21 VSWR OIP3 NF ICC Input VSWR Output Third Order Intercept Point Power out per tone = +14 dBm Noise Figure Device Current IBIAS = 10mA, IC1 = 70mA, IC2 = 320mA VCC Device Voltage Rth j-l Thermal Resistance (junction - lead), TL = 85ºC 31.5 - 1.5:1 dB m 47.0 dB 5.0 mA 360 400 425 V 4.75 5.0 5.25 ºC/W 31 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data, Icc=400mA, Vcc=5V, IS-95, 9 Channels Forward 880 MHz Adjacent Channel Power vs. Channel Output Power -40.0 -45.0 -40C 25C 85C -50.0 dBc -55.0 -60.0 -65.0 -70.0 -75.0 -80.0 -85.0 11 12 13 14 15 16 17 18 Power 19 20(dBm) 21 22 Channel Output 23 24 25 dBm IS-95 CDMA at 880 MHz T=+25C +24 dBm +20 dBm +10 dBm +16 dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data, ICC=400mA, VCC=5V Input/Output Return Loss, Isolation vs Frequency 0 T=+25°C S22 Gain vs. Frequency 40 -10 -40C 25C 85C 36 S11 -20 dB dB 32 -30 28 -40 S12 24 -50 0.8 0.85 0.9 0.95 0.8 1 0.85 0.9 GHz P1dB vs Frequency 36 1 Device Current vs. Source Voltage 600 -40C 25C 85C 25C -40C 85C 500 Device Current (mA) 34 32 dBm 0.95 GHz 30 28 26 400 300 200 100 0 0.8 0.85 0.9 0.95 1 0 GHz 522 Almanor Ave., Sunnyvale, CA 94085 1 2 3 4 5 6 Vcc (V) Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. 850 - 950 MHz Schematic Vcc 10uF Tantalum External Connection 82pF Z=63 Ω, 9.5° 1000pF IC1 2.2nH 6.8K IBIAS 39pF 1 8 2 7 3 6 4 5 IC2 33 nH Z=50 Ω, 15.1° 100pF 6.8pF 15pF 1200pF 330 Ohm Vpc 850 - 950 MHz Evaluation Board Layout Vcc Ref. Des. C3 Part Number Rohm MCH18 series C1 15pF, 5% C2 82pF, 5% Rohm MCH18 series C3 10uF, 10% AVX TAJB106K020R C2 C4 1000pF, 5% Rohm MCH18 series L1 C5 39pF, 5% Rohm MCH18 series C6 1200pF, 5% Rohm MCH18 series C7 6.8pF, ±0.5pF Rohm MCH18 series C4 C1 Value C5 R1 L2 2012 C8 C6 C7 R2 Sirenza Microdevices ECB-101161 Rev. C Vpc 522 Almanor Ave., Sunnyvale, CA 94085 C8 100pF, 5% Rohm MCH18 series L1 2.2nH, ±0.3nH Toko LL1608-FS series L2 33nH, 5% Coilcraft 1008HQ series R1 6.8K Ohm, 5% Rohm MCR03 series R2 330 Ohm, 5% Rohm MCR03 series SOIC-8 PA Eval Board Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. Pin # Function Description 1 V c1 2 V bi as Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic. 3 RF In RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the Application Schematic. 4 V p c2 Vpc2 is the bias control pin for the active bias network for the second stage. The recommended configuration is shown in the Application Schematic. 5, 6, 7, 8 RF Out/Vc2 RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. EPAD Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6). VC1 is the supply voltage for the first stage transistor. The configuration as shown on application schematic is required for optimum RF performance. Simplified Device Schematic 4 2 2 ACTIVE BIAS NETWORK 5-8 1 ACTIVE BIAS NETWORK Absolute Maximum Ratings 3 Parameter (Ta = 25ºC) Absolute Limit Max. Supply Current (IC1) at VCC typ. 150 mA Max. Supply Current (IC2) at VCC typ. 750 mA Max. Device Voltage (VCC) at Icc typ. 6.0 V Max. RF Input Power 10 dB m Caution: ESD sensitive Max. Junction Temp. (TJ) +160 ºC Appropriate precautions in handling, packaging and testing devices must be observed. Max. Storage Temp. +150 ºC The Moisture Sensitivity Level rating for this device is level 1 (MSL-1) based on the JEDEC 22-A113 standard classification. No special moisture packaging/handling is required during storage, shipment, or installation of the devices. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: ICCVCC (max) < (TJ - TL)/Rth,j-l http://www.sirenza.com EDS-102012 Rev F Preliminary SPA-2118 850 MHz 1 Watt Power Amp. Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SPA-2118 500 7" Package Outline Drawing (See SMDI MPO-101644 for tolerances, available on our website) 8 7 6 5 .194 [4.93] EXPOSED PAD Lot ID SPA 2118 .236 [5.994] .155 [3.937] 1 2 3 4 Beveled Edge .045 [1.143] .035 [.889] TOP VIEW BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .058 [1.473] .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW END VIEW Recommended Land Pattern PARTING LINE 0.150 [3.81] Plated-Thru Holes (0.015" Dia, 0.030" Pitch) .025 5° 0.140 [3.56] Machine Screws 0.300 [7.62] DETAIL A 0.080 [2.03] Note: DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 0.050 [1.27] Phone: (800) SMI-MMIC 6 0.020 [0.51] http://www.sirenza.com EDS-102012 Rev F