STPS80L60CY ® POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) 2 x 40 A VRRM 60 V Tj (max) 150 °C VF (max) 0.56 V K A2 FEATURES AND BENEFITS ■ ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED A2 K A1 DESCRIPTION Dual center tap Schottky rectifier suited for CAD computers and servers. Packaged in Max247, STPS80L60CY is intended for use in low voltage, high frequency switching power supplies, free wheeling and polarity protection applications. Max247 ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF(RMS) RMS forward current 56 A 40 80 A 400 A 2 A 20000 W - 55 to + 150 °C 150 °C 10000 V/µs IF(AV) Average forward current Tc = 130°C δ = 0.5 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal IRRM Repetitive peak reverse current tp = 2 µs square F = 1kHz PARM Repetitive peak avalanche power tp = 1µs Tstg Tj dV/dt * : Storage temperature range Per diode Per device Tj = 25°C Maximum operating junction temperature * Critical rate of rise of reverse voltage dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 4A 1/4 STPS80L60CY THERMAL RESISTANCES Symbol Rth (j-c) Parameter Junction to case Rth (c) Value Unit Per diode 0.70 °C/W Total 0.50 Coupling 0.3 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25°C Min. Typ. Forward voltage drop 1.8 mA 0.9 A 0.57 V 0.4 Tj = 25°C IF = 40 A Tj = 125°C 0.50 Tj = 25°C IF = 80 A 0.56 0.78 Tj = 125°C Pulse test : Unit VR = VRRM Tj = 125°C VF * Max. 0.69 0.77 * tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation : P = 0.36 x IF(AV) + 0.005 x IF2(RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature (δ = 0.5). IF(av)(A) P(W) 35 45 δ = 0.5 Rth(j-a)=Rth(j-c) 40 30 δ = 0.2 35 δ = 0.1 25 δ = 0.05 30 δ=1 20 25 15 20 Rth(j-a)=5°C/W 15 10 T 10 5 δ=tp/T IF(av)(A) 5 tp 0 Tamb(°C) 0 0 10 20 30 40 50 Fig. 3: Normalized avalanche power derating versus pulse duration. 0 50 75 100 125 150 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 25 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.4 0.01 0.2 0.01 2/4 Tj(°C) tp(µs) 0.001 0.1 1 0 10 100 1000 0 25 50 75 100 125 150 STPS80L60CY Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration. IM(A) Zth(j-c)/Rth(j-c) 500 1.0 450 0.9 400 0.8 350 0.7 300 0.6 250 Tc=25°C 200 Tc=75°C δ = 0.5 0.5 150 0.4 δ = 0.2 0.3 δ = 0.1 Tc=125°C 100 T 0.2 IM Single pulse 50 t 0.1 t(s) δ=0.5 0 tp(s) δ=tp/T 0.0 1.E-03 1.E-02 1.E-01 1.E+00 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). 1.E-03 1.E-02 1.E-01 tp 1.E+00 Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IR(mA) C(pF) 1.E+03 100.0 F=1MHz Vosc=30mV Tj=25°C Tj=125°C 1.E+02 Tj=100°C 10.0 Tj=75°C 1.E+01 Tj=50°C 1.E+00 1.0 Tj=25°C 1.E-01 VR(V) VR(V) 1.E-02 0.1 0 5 10 15 20 25 30 35 40 45 50 55 60 1 10 100 Fig. 9: Forward voltage drop versus forward current. IFM(A) 1000 100 Tj=125°C (Maximum values) Tj=125°C (Typical values) 10 Tj=25°C (Maximum values) VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 3/4 STPS80L60CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. E A D L1 A1 L b1 b2 e Ordering type b Marking STPS80L60CY STPS80L60CY ■ Millimeters Inches Min. Max. Min. Max. A 4.70 5.30 0.185 0.209 A1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 D 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 E 15.30 15.90 0.602 0.626 L 14.20 15.20 0.559 0.598 L1 3.70 4.30 0.146 0.169 c Package Weight Base qty Delivery mode Max247 4.4g 30 Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. 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