STMICROELECTRONICS STZT2907

STZT2907
STZT2907A
MEDIUM POWER AMPLIFIER
ADVANCE DATA
■
■
■
■
SILICON EPITAXIAL PLANAR NPN
TRANSISTORS
MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
GENERAL PURPOSE MAINLY INTENDED
FOR USE IN MEDIUM POWER INDUSTRIAL
APPLICATION AND FOR AUDIO AMPLIFIER
OUTPUT STAGE
PNP COMPLEMENTS ARE STZT2222 AND
STZT2222A RESPECTIVELY
2
1
2
3
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STZT2907
STZT2907A
V CBO
Collector-Base Voltage (I E = 0)
-60
-60
V
V CEO
Collector-Emitter Voltage (I B = 0)
-40
-60
V
V EBO
Emitter-Base Voltage (I C = 0)
IC
Collector Current
o
P tot
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
October 1995
-5
V
-0.8
A
-1.5
W
-65 to 150
o
C
150
o
C
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STZT2907/STZT2907A
THERMAL DATA
R thj-amb •
R thj-tab •
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Collecor Tab
Max
Max
o
83.3
10
o
C/W
C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
I CBO
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
-20
-10
nA
µA
Collector Cut-off
Current (I E = 0)
V CB = rated V CBO
V CB = rated V CBO
I CEX
Collector Cut-off
Current (V BE = 0.5V)
V CE = -30 V
for STZT2222A
-50
nA
IBEX
Base Cut-off Current
(V BE = 0.5V)
V CE = -30 V
for STZT2222A
-50
nA
Collector-Base
Breakdown Voltage
(I E = 0)
I C = -10 µA
-60
V
I C = -10 mA
for STZT2907
for STZT2907A
-40
-60
V
V
-5
V
V (BR)CBO
V (BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
o
T amb = 125 C
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = -10 µA
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
I B = -15 mA
I B = -50 mA
-0.4
-1.6
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
I C = -150 mA
I C = -500 mA
I B = -15 mA
I B = -50 mA
-1.3
-2.6
V
V
DC Current Gain
I C = -0.1 mA V CE =
for STZT2907
for STZT2907A
I C = -1 mA
V CE =
for STZT2907
for STZT2907A
I C = -10 mA
V CE =
for STZT2907
for STZT2907A
I C = -150 mA V CE =
I C = -500 mA V CE =
for STZT2907
for STZT2907A
h FE ∗
fT
35
75
-10 V
50
100
-10 V
75
100
100
-10 V
-10 V
I C = -10 mA V CE = -10 V f = 100 MHz
C CBO
Collector-Base
Capacitance
IE = 0
V CB = -10 V
C EBO
Emitter-Base
Capacitance
IC = 0
V EB = -2 V
td
Delay Time
I B1 = -15 mA
tr
Rise Time
I C = -150 mA
V CC = -30 V
I C = -150 mA
V CC = -30 V
I B1 = -I B1 = -15 mA
t on
Turn-on Time
ts
Storage Time
tf
Fall Time
t off
Turn-off Time
300
10
50
Transition Frequency
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
2/4
-10 V
f = 1 MHz
f = 1 MHz
200
MHz
8
pF
30
pF
10
ns
40
ns
45
ns
80
ns
30
ns
100
ns
STZT2907/STZT2907A
SOT223 MECHANICAL DATA
mm
DIM.
mils
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
a
2.27
2.3
2.33
89.4
90.6
91.7
b
4.57
4.6
4.63
179.9
181.1
182.3
c
0.2
0.4
0.6
7.9
15.7
23.6
d
0.63
0.65
0.67
24.8
25.6
26.4
e1
1.5
1.6
1.7
59.1
63
66.9
e4
0.32
12.6
f
2.9
3
3.1
114.2
118.1
122.1
g
0.67
0.7
0.73
26.4
27.6
28.7
l1
6.7
7
7.3
263.8
275.6
287.4
l2
3.5
3.5
3.7
137.8
137.8
145.7
L
6.3
6.5
6.7
248
255.9
263.8
L
e1
l2
d
a
c
b
e4
f
l1
C
B
C
E
g
P008B
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STZT2907/STZT2907A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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