SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance D 100% Rg Tested APPLICATIONS D Automotive Such As − High-Side Switch − Motor Drives − 12-V Boardnet S TO-263 G G D S Top View D Ordering Information: SUM110P06-08L SUM110P06-08L—E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS −60 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Currentd (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current Single Pulse Avalanche L = 0.1 0 1 mH Energya TC = 25_C Power Dissipation TA = 25_Cb Operating Junction and Storage Temperature Range ID V −110 −75 IDM −200 IAS −65 EAS 211 PD Unit 272c 3.75b A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit Junction-to-Ambient PCB Mountb RthJA 40 Junction-to-Case RthJC 0.55 THERMAL RESISTANCE RATINGS Parameter _C/W Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 73045 S-41506—Rev. A, 09-Aug-04 www.vishay.com 1 SUM110P06-08L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = −250 mA −60 VGS(th) VDS = VGS, ID = −250 mA −1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = −60 V, VGS = 0 V −1 VDS = −60 V, VGS = 0 V, TJ = 125_C −50 VDS = −60 V, VGS = 0 V, TJ = 175_C −250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = −5 V, VGS = −10 V −120 VGS = −10 V, ID = −30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) gfs 0.0065 nA mA m 0.008 0.0129 VGS = −10 V, ID = −30 A, TJ = 175_C 0.016 VDS = −15 V, ID = −50 A V A VGS = −10 V, ID = −30 A, TJ = 125_C VGS = −4.5 V, ID = −20 A Forward Transconductancea −3 0.0085 W 0.0105 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss 760 Total Gate Chargec Qg 160 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 9200 VGS = 0 V, VDS = −25 V, f = 1 MHz 975 pF 240 40 VDS = −30 V,, VGS = −10 V,, ID = −110 A nC 36 f = 1.0 MHz 1.5 3 4.5 td(on) 20 30 tr VDD = −30 30 V, RL = 0.27 W 190 285 td(off) ID ] −110 A, VGEN = −10 V, Rg = 2.5 W 140 210 300 450 tf W ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Is −110 Pulsed Current ISM −200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = −50 A, VGS = 0 V trr IRM(REC) Qrr IF = −50 A,, di/dt = 100 A/ms m A −1.0 −1.5 V 60 90 ns −3 −4.5 A 0.09 0.2 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 73045 S-41506—Rev. A, 09-Aug-04 SUM110P06-08L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 200 VGS = 10 thru 5 V 160 I D − Drain Current (A) I D − Drain Current (A) 160 120 4V 80 40 120 80 TC = 125_C 40 25_C 3V −55_C 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.020 25_C 160 125_C 120 80 40 r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 0 0.016 0.012 VGS = 4.5 V 0.008 VGS = 10 V 0.004 0.000 0 10 20 30 40 50 60 70 80 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 6000 3000 Coss Crss 0 0 100 120 Gate Charge 20 12000 9000 80 ID − Drain Current (A) Capacitance 15000 60 VDS = 30 V ID = 110 A 16 12 8 4 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Document Number: 73045 S-41506—Rev. A, 09-Aug-04 60 0 40 80 120 160 200 240 280 320 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM110P06-08L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) 1.7 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 2.0 1.4 1.1 0.8 0.5 −50 −25 0 25 50 75 100 125 150 TJ = 150_C 1 175 0.0 0.3 TJ − Junction Temperature (_C) 1000 TJ = 25_C 10 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 76 72 ID = 250 mA V (BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 25_C 10 68 64 1 IAV (A) @ TA = 150_C 60 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 56 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 73045 S-41506—Rev. A, 09-Aug-04 SUM110P06-08L New Product Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 200 Limited by rDS(on) 100 Limited by Package 50 0 100 ms 10 1 1 ms 10 ms 100 ms, dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) TC − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 10 ms 100 I D − Drain Current (A) I D − Drain Current (A) 150 Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Document Number: 73045 S-41506—Rev. A, 09-Aug-04 www.vishay.com 5