PHILIPS TEA1099H

INTEGRATED CIRCUITS
DATA SHEET
TEA1099H
Speech and handsfree IC with
auxiliary inputs/outputs and analog
multiplexer
Product specification
Supersedes data of 1998 Jun 11
File under Integrated Circuits, IC03
1999 Apr 08
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
FEATURES
Auxiliary interfaces
Line interface
• General auxiliary output for transmit and receive
purposes
• Low DC line voltage
• Auxiliary transmit input with high signal level capability
dedicated to line transmission
• Voltage regulator with adjustable DC voltage
• Symmetrical high impedance inputs (70 kΩ) for
dynamic, magnetic or electret microphones
• Auxiliary receive input with high signal level capability
• Integrated multiplexer for channels selection.
• Dual Tone Multi-Frequency (DTMF) input with
confidence tone on earphone and/or loudspeaker
• Receive amplifier for dynamic, magnetic or
piezo-electric earpieces (with externally adjustable gain)
APPLICATIONS
• AGC: Automatic Gain Control for true line loss
compensation.
• Cordless telephones
Supplies
• Answering machines.
• Provides a strong 3.35 V regulated supply for
microcontroller or dialler
GENERAL DESCRIPTION
• Line powered telephone sets
• Fax machines
• Provides filtered power supply, optimized according to
line current and compatible with external voltage or
current sources
The TEA1099H is an analog bipolar circuit dedicated for
telephone applications. It includes a line interface, handset
(HS) microphone and earpiece amplifiers, handsfree (HF)
microphone and loudspeaker amplifiers, some specific
auxiliary Inputs/Outputs (I/Os) and an analog multiplexer
to enable the right transmit and/or receive channels.
The multiplexer is controlled by a logic circuit which
decodes four logic inputs provided by a microcontroller.
Thirteen different application modes have been defined
and can be accessed by selecting the right logic inputs.
An application mode is a special combination of transmit
and receive channels required by telephone applications.
• Filtered 2.0 V power supply output for electret
microphone
• Compatible with a ringer mode
• Power-Down (PD) logic input for power-down.
Handsfree
• Asymmetrical high-impedance input for electret
microphone
This IC can be supplied by the line and/or by the mains if
available (in a cordless telephone or an answering
machine for example). It provides a 3.35 V supply for a
microcontroller or dialler and a 2.0 V filtered voltage supply
for an electret microphone. The IC is designed to facilitate
the use of the loudspeaker amplifier during ringing phase.
• Loudspeaker amplifier with single-ended rail-to-rail
output and externally adjustable gain
• Dynamic limiter on loudspeaker amplifier to prevent
distortion
• Logarithmic volume control on loudspeaker amplifier via
linear potentiometer
• Duplex controller consisting of:
– Signal and noise envelope monitors for both
channels (with adjustable sensitivities and timing)
– Decision logic (with adjustable switch-over and Idle
mode timing)
– Voice switch control (with adjustable switching range
and constant sum of gain during switching).
1999 Apr 08
2
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
QUICK REFERENCE DATA
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; unless otherwise specified.
SYMBOL
PARAMETER
Iline
line current operating range
VSLPE
stabilized voltage between SLPE
and GND (Vref)
regulated supply voltage for
internal circuitry
VBB
VDD
regulated supply voltage on pin
VDD
CONDITIONS
MIN.
TYP.
MAX.
UNIT
11
−
140
mA
with reduced performance
1
−
11
mA
Iline = 15 mA
3.4
3.7
4.0
V
Iline = 70 mA
5.7
6.1
6.5
V
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
3.35
3.6
V
normal operation
VBB > 3.35 V + 0.25 V (typ) 3.1
otherwise
−
VBB − 0.25 −
V
VESI
external voltage supply allowed
on pin ESI
−
−
6
V
IESI(ext)
external current supply allowed on
pin ESI
−
−
140
mA
IBB
current available on pin VBB
speech mode
−
11
−
mA
handsfree mode
−
9
−
mA
IBB(pd)
current consumption on VBB
during power-down phase
PD = LOW
−
460
−
µA
Gv(MIC-LN)
voltage gain from pin
MIC+/MIC− to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(QR)
gain voltage range between pins
RECO and QR
−3
−
+15
dB
Gv(TXIN-TXOUT) voltage gain from pin TXIN to
TXOUT
VTXIN = 3 mV (RMS);
RGATX = 30.1 kΩ
12.7
15.2
17.7
dB
Gv(HFTX-LN)
VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ
25.5
28
30.5
dB
−
40
−
dB
with RSWR referenced to
365 kΩ
−40
−
+12
dB
5.45
6.45
7.45
dB
voltage gain from pin HFTX to LN
Gv(HFRX-LSAO) voltage gain from pin HFRX to
LSAO
SWRA
switching range
∆SWRA
switching range adjustment
∆Gv(trx)
gain control range for transmit and Iline = 70 mA; on
receive amplifiers affected by the Gv(MIC-LN), Gv(IR-RECO) and
AGC; with respect to Iline = 15 mA Gv(IR-AUXO)
ORDERING INFORMATION
TYPE
NUMBER
TEA1099H
1999 Apr 08
PACKAGE
NAME
QFP44
DESCRIPTION
plastic quad flat package; 44 leads (lead length 1.3 mm);
body 10 × 10 × 1.75 mm
3
VERSION
SOT307-2
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
BLOCK DIAGRAM
handbook, full pagewidth
LN
15
REG
SLPE
16
14
STARTER
LINE CURRENT DETECTION
LOW VOLTAGE BEHAVIOUR
AGC
18
SWITCH
D6
SUPPLY
MANAGEMENT
13
HFTX
36
TXAUX
DTMF
MIC+
MIC−
31
30
TXIN
28
TSEN
4
TENV
3
TNOI
2
RNOI
5
RENV
7
RSEN
6
GALS
11
LSAO
12
DLC
AUXO
RECO
8
ESI
19
VDD
20
MICS
38
PD
37
HFC
39
MUTT
Tail currents for preamps
ANALOG
MULTIPLEXER
CONTROL
43
32
VBB
9
AGC
POWER-DOWN
CURRENT SOURCES
GND
10
ATT.
40
MUTR
41
AUXC
27
GATX
TEA1099H
TX AND RX
ENVELOPE AND NOISE
DETECTORS
BUFFERS
AND
COMPARATORS
DUCO LOGIC
SWT STATUS
VOICE
SWITCH
VOLUME
CONTROL
26
TXOUT
29
GNDTX
24
SWT
25
IDT
21
STAB
22
SWR
23
VOL
1
DYNAMIC
LIMITER
44
17
IR
42
RAUX
35
GARX
34
QR
33
ATT.
MGM296
Fig.1 Block diagram.
1999 Apr 08
HFRX
4
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
PINNING
SYMBOL
HFRX
PIN
1
DESCRIPTION
receive input for loudspeaker
amplifier or auxiliary receive
amplifier
TNOI
2
transmit noise envelope timing
adjustment
TENV
3
transmit signal envelope timing
adjustment
TSEN
4
transmit signal envelope sensitivity
adjustment
RNOI
5
receive noise envelope timing
adjustment
SYMBOL
PIN
DESCRIPTION
MICS
20
microphone supply output
STAB
21
reference current adjustment
SWR
22
switching range adjustment
VOL
23
loudspeaker volume adjustment
SWT
24
switch-over timing adjustment
IDT
25
Idle mode timing adjustment
TXOUT
26
HF microphone amplifier output
GATX
27
HF microphone amplifier gain
adjustment
TXIN
28
HF microphone amplifier input
RSEN
6
receive signal envelope sensitivity
adjustment
GNDTX
29
ground reference for microphone
amplifiers
RENV
7
receive signal envelope timing
adjustment
MIC−
30
negative HS microphone amplifier
input
DLC
8
dynamic limiter capacitor for the
loudspeaker amplifier
MIC+
31
positive HS microphone amplifier
input
32
dual tone multi-frequency input
ESI
9
external supply input
DTMF
VBB
10
stabilized supply for internal
circuitry
QR
33
earpiece amplifier output
GARX
34
earpiece amplifier gain adjustment
RECO
35
receive amplifier output
HFTX
36
transmit input for line amplifier or
auxiliary receive amplifier
GALS
11
loudspeaker amplifier gain
adjustment
LSAO
12
loudspeaker amplifier output
GND
13
ground reference
HFC
37
logic input
SLPE
14
line current sense
PD
38
power-down input (active LOW)
LN
15
positive line terminal
MUTT
39
logic input (active LOW)
REG
16
line voltage regulator decoupling
MUTR
40
logic input (active LOW)
IR
17
receive amplifier input
AUXC
41
logic input
AGC
18
automatic gain control/line loss
compensation
RAUX
42
auxiliary receive amplifier input
3.35 V regulated voltage supply for
the microcontroller
TXAUX
43
auxiliary transmit amplifier input
AUXO
44
auxiliary amplifier output
VDD
1999 Apr 08
19
5
Philips Semiconductors
Product specification
34 GARX
35 RECO
36 HFTX
37 HFC
TEA1099H
38 PD
39 MUTT
40 MUTR
41 AUXC
42 RAUX
44 AUXO
handbook, full pagewidth
43 TXAUX
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
33 QR
HFRX 1
TNOI 2
32 DTMF
TENV 3
31 MIC+
TSEN 4
30 MIC−
RNOI 5
29 GNDTX
RSEN 6
28 TXIN
TEA1099H
RENV 7
27 GATX
26 TXOUT
DLC 8
25 IDT
ESI 9
SWR 22
MICS 20
STAB 21
VDD 19
AGC 18
IR 17
LN 15
REG 16
23 VOL
SLPE 14
GALS 11
GND 13
24 SWT
LSAO 12
VBB 10
MGM297
Fig.2 Pin configuration.
The voltage between pins SLPE and REG is used by the
internal regulator to generate the stabilized reference
voltage and is decoupled by means of a capacitor between
pins LN and REG. This capacitor converted into an
equivalent inductance realizes the set impedance
conversion from its DC value (RSLPE) to its AC value (done
by an external impedance).
FUNCTIONAL DESCRIPTION
All data given in this chapter are typical values, except
when otherwise specified.
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE,
REG AND VBB)
The IC regulates the line voltage at pin LN and it can be
calculated as follows:
The supply for the TEA1099H and its peripherals is
obtained from the line. The IC generates a stabilized
reference voltage (Vref) between pins SLPE and GND.
This reference voltage is equal to 3.7 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 6.1 V for line currents
higher than 45 mA. For line currents below 9 mA, the
internal reference voltage generating Vref is automatically
adjusted to a lower value. This is the so-called low voltage
area and the TEA1099H has limited performances in this
area (see Section “Low voltage behaviour”). This
reference voltage is temperature compensated.
1999 Apr 08
V LN = V ref + R SLPE × I SLPE
I SLPE = I line – I
x
where:
Iline = line current
Ix = current consumed on pin LN (approximately a few µA)
ISLPE = current flowing through the RSLPE resistor
6
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
The preferred value for RSLPE is 20 Ω. Changing this value
will affect more than the DC characteristics; it also
influences the transmit gains to the line, the gain control
characteristic, the sidetone level and the maximum output
swing on the line.
The aim of the current switch TR1 and TR2 is to reduce
distortion of large AC line signals. Current ISLPE is supplied
to VBB via TR1 when the voltage on SLPE is greater than
VBB + 0.25 V. When the voltage on SLPE is lower than this
value, the current ISLPE is shunted to GND via TR2.
As can be seen from Fig.3, the internal circuitry is supplied
by pin VBB, which is a strong supply point combined with
the line interface. The line current is flowing through the
RSLPE resistor and is sunk by the VBB voltage stabilizer,
becoming available for a loudspeaker amplifier or any
peripheral IC. Its voltage is equal to 3.0 V for line currents
lower than 18 mA. It than increases linearly with the line
current and reaches the value of 5.3 V for line currents
greater than 45 mA. It is temperature compensated.
See Fig.4 for the main DC voltages.
The reference voltage Vref can be increased by connecting
an external resistor between pins REG and SLPE.
For large line currents, this increase can slightly affect
some dynamic performances such as maximum signal
level on the line for 2% Total Harmonic Distortion (THD).
The voltage on pin VBB is not affected by this external
resistor.
LN
handbook, full pagewidth
TR2
RSLPE
GND
20 Ω
TR1
SLPE
CREG
4.7 µF
VBB
E2
E1
TP1
D1
J1
R3
D1
REG
R1
TN2
R2
from
preamp
J2
TN1
GND
GND
Fig.3 Line interface principle.
1999 Apr 08
7
MGM298
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
FCA049
8
handbook, full pagewidth
LN
voltages
(V)
SLPE
6
VBB
4
VDD
MICS
2
0
0
0.01
0.02
0.03
0.04
0.05
0.06
Iline (A)
0.07
Fig.4 Main DC voltages.
EXTERNAL SUPPLY (PINS ESI AND VBB)
VDD SUPPLY FOR MICROCONTROLLER (PIN VDD)
The TEA1099H can be supplied by the line as well as by
external power sources (voltage or current sources) that
must be connected to pin ESI.
The voltage on VDD supply point follows the voltage on VBB
with a difference typically equal to 250 mV and is internally
limited to 3.35 V. This voltage is temperature
compensated. This supply point can provide a current up
to 3 mA typically. Its internal consumption stays low (a few
10 nA) as long as VDD does not exceed 1.5 V (see Fig.5).
The IC will choose which supply to use according to the
voltage it can provide. A voltage supply on ESI is efficient
only if its value is greater than the working voltage of the
internal VBB voltage stabilizer. Otherwise the IC continues
to be line powered. The current consumed on this source
is at least equal to the internal consumption. It increases
with the voltage difference between the value forced on
ESI and the working voltage of the internal stabilizer.
The excess current compared to the internal consumption
becomes then available for other purposes such as
supplying a loudspeaker amplifier. The voltage source
should not exceed 6 V. If the value of the external voltage
source can be lower than the working voltage of the
internal stabilizer, an external diode is required to avoid
reverse current flowing into the external power supply.
An external voltage can be connected on VDD with limited
extra consumption on VDD (typically 100 µA). This voltage
source should not be lower than 3.5 V or higher than 6 V.
VBB and VDD can supply external circuits in the limit of
currents provided either from the line or from ESI, taking
into account the internal current consumption.
In case of current source, the voltage on VBB and ESI
depends on the current available. It is internally limited to
6.6 V. The current source should not exceed 140 mA.
1999 Apr 08
8
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
FCA050
10 8
handbook, full pagewidth
IDD
(pA)
10 7
10 6
10 5
10 4
10 3
10 2
10
1.0
1.5
2.0
2.5
VDD (V)
3.0
Fig.5 Current consumption on VDD.
These two channels are able to deliver signals for line
currents as small as 3 mA. The HFC input is tied to GND
sinking a current typically equal to 300 µA.
SUPPLY FOR MICROPHONE (PINS MICS AND GNDTX)
The MICS output can be used as a supply for electret
microphones. Its voltage is equal to 2.0 V; it can source
current up to 1 mA and has an output impedance equal to
200 Ω.
POWER-DOWN MODE (PINS PD AND AUXC)
To reduce current consumption during dialling or register
recall (flash), the TEA1099H is provided with a
power-down input (PD). When the voltage on both pins PD
and AUXC is LOW, the current consumption from VBB and
VDD is reduced to 460 µA typically. Therefore a capacitor
of 470 µF on VBB is sufficient to power the TEA1099H
during pulse dialling or flash. The PD input has a pull-up
structure, while AUXC has a pull-down structure. In this
mode, the capacitor CREG is internally disconnected.
LOW VOLTAGE BEHAVIOUR
For line currents below 9 mA, the reference voltage is
automatically adjusted to a lower value; the VBB voltage
follows the SLPE voltage with 250 mV difference.
The excess current available for other purposes than DC
biasing of the IC becomes small. In this low voltage area,
the IC has limited performances.
When the VBB voltage reaches 2.7 V, the VBB detector of
the receive dynamic limiter on LSAO acts and discharges
the DLC capacitor. The loudspeaker is then automatically
disabled below this DC voltage.
RINGER MODE (PINS ESI, VBB, AUXC AND PD)
The TEA1099H is designed to be activated during the
ringing phase. The loudspeaker amplifier can be used for
the ringing signal. The IC must be powered by an external
supply on ESI, while applying a HIGH level on the logic
input AUXC and a LOW level on PD input. Only the HFRX
input and the LSAO output are activated, in order to limit
the current consumption. Some dynamic limitation is
provided to prevent the LSAO output from saturation and
VBB from being discharged below 2.7 V.
When VBB becomes lower than 2.5 V, the TEA1099H is
forced into a low voltage mode whatever the levels on the
logic inputs are. It is a speech mode with reduced
performances only enabling the microphone channel
(between the MIC inputs and LN) and the earpiece
amplifier.
1999 Apr 08
9
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
Transmit channels (pins MIC+, MIC−, DTMF, TXAUX,
HFTX and LN)
TEA1099H
HANDSFREE TRANSMIT OUTPUT STAGE (PINS HFTX AND LN)
The TEA1099H has an asymmetrical HFTX input, which is
mainly intended for use in combination with the TXOUT
output. The input impedance between HFTX and GND is
20 kΩ (typ.). The voltage gain between pins HFTX and LN
is set to 34.7 dB. Without limitation from the output, the
input stage can accommodate signals up to 95 mV (RMS)
at room temperature for 2% of THD. The HFTX input is
biased at two diodes voltage.
HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND
LN)
The TEA1099H has symmetrical microphone inputs.
The input impedance between MIC+ and MIC− is
70 kΩ (typ.). The voltage gain between pins MIC+/MIC−
and LN is set to 44.3 dB. Without limitation from the output,
the microphone input stage can accommodate signals up
to 18 mV (RMS) at room temperature for 2% of THD.
The microphone inputs are biased at one diode voltage.
Automatic gain control is provided for line loss
compensation.
Automatic gain control is provided for line loss
compensation.
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC−
AND TXOUT)
DTMF AMPLIFIER (PINS DTMF, LN AND RECO)
The voltage gain between the microphone inputs
MIC+/MIC− and the output TXOUT is set to 49.8 dB. This
channel gives an image of the signal sent on the line while
speaking in the handset microphone. Using external
circuitry, this signal can be used for several purposes such
as sending dynamic limitation or anti-howling in a
listening-in application. The TXOUT output is biased at two
diodes voltage.
The TEA1099H has an asymmetrical DTMF input.
The input impedance between DTMF and GND is
20 kΩ (typ.). The voltage gain between pins DTMF and LN
is set to 25.35 dB. Without limitation from the output, the
input stage can accommodate signals up to
180 mV (RMS) at room temperature for 2% of THD.
When the DTMF amplifier is enabled, dialling tones may
be sent on the line. These tones can be heard in the
earpiece or in the loudspeaker at a low level. This is called
the confidence tone. The voltage attenuation between pins
DTMF and RECO is typically equal to −16.5 dB.
The automatic gain control has no effect on these
channels.
Receive channels (pins IR, RAUX, RECO, GARX and
QR)
The DC biasing of this input is 0 V.
RX AMPLIFIER (PINS IR AND RECO)
The automatic gain control has no effect on these
channels.
The receive amplifier has one input IR which is referred to
the line. The input impedance between pins IR and LN is
20 kΩ (typ.) and the DC biasing between these pins is
equal to one diode voltage. The gain between pins IR
(referred to LN) and RECO is typically equal to 29.7 dB.
Without limitation from the output, the input stage can
accommodate signals up to 50 mV (RMS) at room
temperature for 2% of THD.
AUXILIARY TRANSMIT AMPLIFIER (PINS TXAUX AND LN)
The TEA1099H has an asymmetrical auxiliary input
TXAUX. The input impedance between TXAUX and GND
is 20 kΩ (typ.). The voltage gain between pins TXAUX and
LN is set to 12.5 dB. Without limitation from the output, the
input stage can accommodate signals up to 1.2 V (RMS)
at room temperature for 2% of THD. The TXAUX input is
biased at two diodes voltage.
This receive amplifier has a rail-to-rail output RECO, which
is designed for use with high ohmic (real) loads (larger
than 5 kΩ). This output is biased at two diodes voltage.
Automatic gain control is provided for line loss
compensation.
1999 Apr 08
Automatic gain control is provided for line loss
compensation.
10
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
AUXILIARY AMPLIFIERS USING THE MICROPHONE INPUTS
(PINS MIC+, MIC− AND AUXO)
EARPIECE AMPLIFIER (PINS GARX AND QR)
The earpiece amplifier is an operational amplifier having
its output (QR) and its inverting input (GARX) available.
Its input signal comes, via a decoupling capacitor, from the
receive RECO output. It is used in combination with two
resistors to get the required gain or attenuation compared
to the receive gain. It can be chosen between
−3 and +15 dB.
The auxiliary transmit amplifier using the microphone
MIC+ and MIC− inputs has a gain of 25.5 dB referenced to
AUXO. Without limitation from the output, the input stage
can accommodate signals up to 16 mV (RMS) at room
temperature for 2% of THD.
The automatic gain control has no effect on this channel.
Two external capacitors CGAR (connected between GARX
and QR) and CGARS (connected between GARX and
GND) ensure stability. The CGAR capacitor provides a
1st-order low-pass filter. The cut-off frequency
corresponds to the time constant CGAR × Re2.
The relationship CGARS ≥ 10 × CGAR must be fulfilled.
AUXILIARY AMPLIFIERS USING HFTX
(PINS HFTX AND AUXO)
The auxiliary transmit amplifier using the HFTX input has
a gain of 15.2 dB referenced to AUXO.
The automatic gain control has no effect on this channel.
The earpiece amplifier has a rail-to-rail output QR, biased
at two diodes voltage. It is designed for use with low ohmic
(real) loads (150 Ω) or capacitive loads (100 nF in series
with 100 Ω).
RX AMPLIFIER USING IR (PINS IR AND AUXO)
The auxiliary receive amplifier uses pin IR as input.
The input is referred to LN and the DC biasing between
these two pins is one diode voltage. The voltage gain
between the input IR (referenced to LN) and the output
AUXO is typically equal to 32.8 dB, which compensates
typically the attenuation provided by the anti-sidetone
network.
AUXILIARY RECEIVE AMPLIFIER (PINS RAUX AND RECO)
The auxiliary receive amplifier has an asymmetrical input
RAUX; it uses the RECO output. Its input impedance
between pins RAUX and GND is typically equal to 20 kΩ.
The voltage gain between pins RAUX and RECO is equal
to −2.4 dB. Without any limitation from the output, the input
stage can accommodate signals up to 0.95 V (RMS) at
room temperature for 2% of THD.
Automatic gain control is provided for line loss
compensation.
AGC (pin AGC)
This auxiliary amplifier has a rail-to-rail output RECO,
which is designed for use with high ohmic (real) loads
(larger than 5 kΩ). This output is biased at two diodes
voltage.
The TEA1099H performs automatic line loss
compensation, which fits well with the true line attenuation.
The automatic gain control varies the gain of some
transmit and receive amplifiers in accordance with the DC
line current. The control range is 6.45 dB for Gv(MIC-LN),
Gv(IR-RECO) and Gv(IR-AUXO) and 6.8 dB for the other
affected channels, which corresponds approximately to a
line length of 5.5 km for a 0.5 mm twisted-pair copper
cable.
The automatic gain control has no effect on this channel.
Auxiliary amplifiers using AUXO (pins MIC+, MIC−,
HFTX, IR and AUXO)
The TEA1099H has an auxiliary output AUXO, biased at
two diodes voltage. This output stage is a rail-to-rail one,
designed for use with high ohmic (real) loads (larger than
5 kΩ). The AUXO output amplifier is used in three different
channels, two transmit channels and one receive channel.
1999 Apr 08
TEA1099H
To enable this gain control, the AGC pin must be shorted
to pin LN. The start current for compensation corresponds
to a line current equal to typically 23 mA and the stop
current to 57 mA. The start current can be increased by
connecting an external resistor between pins AGC and LN.
It can be increased up to 40 mA (using a resistor typically
equal to 80 kΩ). The start and stop current will be
maintained in a ratio equal to 2.5. By leaving the AGC pin
open-circuit, the gain control is disabled and no line loss
compensation is performed.
11
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
The difference between the maximum gain and minimum
gain is called the switching range.
Handsfree application
As can be seen from Fig.3, a loop is formed via the
sidetone network in the line interface part and the acoustic
coupling between loudspeaker and microphone of the
handsfree part. When this loop gain is greater than 1,
howling occurs. In a full duplex application, this would be
the case. The loop-gain has to be much lower than 1 and
therefore has to be decreased to avoid howling. This is
achieved by the duplex controller. The duplex controller of
the TEA1099H detects which channel has the ‘largest’
signal and then controls the gain of the microphone
amplifier and the loudspeaker amplifier so that the sum of
the gains remains constant.
HANDSFREE MICROPHONE CHANNEL: PINS TXIN, GATX,
TXOUT AND GNDTX (see Fig.7)
The TEA1099H has an asymmetrical handsfree
microphone input TXIN with an input resistance of 20 kΩ.
The DC biasing of the input is 0 V. The gain of the input
stage varies according to the mode of the TEA1099H.
In the transmit mode, the gain is at its maximum; in the
receive mode, it is at its minimum and in the Idle mode it is
halfway between maximum and minimum.
Switch-over from one mode to the other is smooth and
click-free. The output TXOUT is biased at two diodes
voltage and has a current capability equal to 20 µA (RMS).
In the transmit mode, the overall gain of the microphone
amplifier (from pins TXIN to TXOUT) can be adjusted from
0 up to 31 dB to suit specific application requirements.
The gain is proportional to the value of RGATX and equals
15.2 dB with RGATX = 30.1 kΩ. Without limitation from the
output, the microphone input stage can accommodate
signals up to 18 mV (RMS) at room temperature for 2% of
THD.
As a result, the circuit in this handsfree application can be
in three stable modes:
1. Transmit mode (TX mode).
The gain of the microphone amplifier is at its maximum
and the gain of the loudspeaker amplifier is at its
minimum.
2. Receive mode (RX mode).
The gain of the loudspeaker amplifier is at its
maximum and the gain of the microphone amplifier is
at its minimum.
3. Idle mode.
The gain of the amplifiers is halfway between their
maximum and minimum value.
handbook, full pagewidth
acoustic
coupling
telephone
line
DUPLEX
CONTROL
HYBRID
sidetone
MGM299
Fig.6 Handsfree telephone set principles.
1999 Apr 08
12
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
GATX 27
RGATX
VBB
CMIC
28 TXIN
V
I
I
TXOUT 26
V
RMIC
to
envelope
detector
GNDTX 29
from
voice
switch
MGM300
Fig.7 Handsfree microphone channel.
LOUDSPEAKER CHANNEL
handbook, full pagewidth
to
logic
RGALS
11 GALS
CGALS
12 LSAO
to/from
voice switch
to
envelope
detector
VBB
V
I
I
V
HFRX 1
CLSAO
8 DLC
DYNAMIC
LIMITER
VOLUME
CONTROL
VOL 23
RVOL
CDLC
MGM301
Fig.8 Loudspeaker channel.
1999 Apr 08
13
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
When the supply voltage drops below an internal threshold
voltage of 2.7 V, the gain of the loudspeaker amplifier is
rapidly reduced (approximately 1 ms). When the supply
voltage exceeds 2.7 V, the gain of the loudspeaker
amplifier is increased again.
Loudspeaker amplifier: pins HFRX, GALS and LSAO
The TEA1099H has an asymmetrical input for the
loudspeaker amplifier with an input resistance of 20 kΩ
between pins HFRX and GND. It is biased at two diodes
voltage. Without limitation from the output, the input stage
can accommodate signals up to 580 mV (RMS) at room
temperature for 2% of THD.
By forcing a level lower than 0.2 V on pin DLC, the
loudspeaker amplifier is muted and the TEA1099H is
automatically forced into the transmit mode.
The gain of the input stage varies according to the mode
of the TEA1099H. In the receive mode, the gain is at its
maximum; in the transmit mode, it is at its minimum and in
the Idle mode, it is halfway between maximum and
minimum. Switch-over from one mode to the other is
smooth and click-free. The rail-to-rail output stage is
designed to power a loudspeaker connected as a
single-ended load (between pins LSAO and GND).
RX amplifier using AUXO
In some cordless applications, the handset may be used to
perform handsfree function (instead of the base). As the
TEA1099H is in the base and the active loudspeaker is in
the handset, a second receive output is required.
The amplifier using HFRX as an input and AUXO as an
output will be used for communication with the RF IC,
sending information to the handset. It will be controlled by
the duplex controller in the same way as the loudspeaker
amplifier.
In the receive mode, the overall gain of the loudspeaker
amplifier can be adjusted from 0 up to 35 dB to suit specific
application requirements. The gain from HFRX to LSAO is
proportional to the value of RGALS and equals 28 dB with
RGALS = 255 kΩ. A capacitor connected in parallel with
RGALS is recommended and provides a 1st-order low-pass
filter.
The voltage gain between pins HFRX and AUXO is equal
to 3.7 dB. The amplifier can manage the same input signal
as the loudspeaker amplifier. It has a rail-to-rail output,
biased by two diodes, designed for use with high ohmic
(real) loads (larger than 5 kΩ). The volume control and the
dynamic limiter are not active on this channel.
Volume control: pin VOL
The loudspeaker amplifier gain can be adjusted with the
potentiometer RVOL. A linear potentiometer can be used to
obtain logarithmic control of the gain at the loudspeaker
amplifier. Each 1.9 kΩ increase of RVOL results in a gain
loss of 3 dB. The maximum gain reduction with the volume
control is internally limited to the switching range.
DUPLEX CONTROLLER
Signal and noise envelope detectors: pins TSEN, TENV,
TNOI, RSEN, RENV and RNOI
The signal envelopes are used to monitor the signal level
strength in both channels. The noise envelopes are used
to monitor background noise in both channels. The signal
and noise envelopes provide inputs for the decision logic.
The signal and noise envelope detectors are shown in
Fig.9.
Dynamic limiter: pin DLC
The dynamic limiter of the TEA1099H prevents clipping of
the loudspeaker output stage and protects the operation of
the circuit when the supply voltage at VBB falls below 2.7 V.
Hard clipping of the loudspeaker output stage is prevented
by rapidly reducing the gain when the output stage starts
to saturate. The time in which gain reduction is effected
(clipping attack time) is approximately a few milliseconds.
The circuit stays in the reduced gain mode until the peaks
of the loudspeaker signal no longer cause saturation.
The gain of the loudspeaker amplifier then returns to its
normal value within the clipping release time (typically
250 ms). Both attack and release times are proportional to
the value of the capacitor CDLC. The total harmonic
distortion of the loudspeaker output stage, in reduced gain
mode, stays below 2% up to 10 dB (minimum) of input
voltage overdrive [providing VHFRX is below
580 mV (RMS)].
1999 Apr 08
TEA1099H
For the transmit channel, the input signal at TXIN is 40 dB
amplified to TSEN. For the receive channel, the input
signal at HFRX is 0 dB amplified to RSEN. The signals
from TSEN and RSEN are logarithmically compressed and
buffered to TENV and RENV respectively. The sensitivity
of the envelope detectors is set with RTSEN and RRSEN.
The capacitors connected in series with the two resistors
block any DC component and form a 1st-order high-pass
filter. In the basic application (see Fig.16) it is assumed
that VTXIN = 1 mV (RMS) and VHFRX = 100 mV (RMS)
nominal and both RTSEN and RRSEN have a value of 10 kΩ.
With the value of CTSEN and CRSEN at 100 nF, the cut-off
frequency is at 160 Hz.
14
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
The buffer amplifiers which apply the compressed signals
to TENV and RENV have a maximum source current of
120 µA and a maximum sink current of 1 µA. Together with
the capacitor CTENV and CRENV, the timing of the signal
envelope monitors can be set. In the basic application, the
value of both capacitors is 470 nF. Because of the
logarithmic compression, each 6 dB signal increase
means 18 mV increase of the voltage on the envelopes
TENV or RENV at room temperature. Thus, timings can be
expressed in dB/ms. At room temperature, the 120 µA
sourced current corresponds to a maximum rise-slope of
the signal envelope of 85 dB/ms. This is sufficient to track
normal speech signals. The 1 µA current sunk by TENV or
RENV corresponds to a maximum fall-slope of 0.7 dB/ms.
This is sufficient for a smooth envelope and also eliminates
the effect of echoes on switching behaviour.
TEA1099H
To determine the noise level, the signals on TENV and
RENV are buffered to TNOI and RNOI. These buffers have
a maximum source current of 1 µA and a maximum sink
current of 120 µA. Together with the capacitors CTNOI and
CRNOI, the timings can be set. In the basic application
(see Fig.16) the value of both capacitors is 4.7 µF. At room
temperature, the 1 µA sourced current corresponds to a
maximum rise-slope of the noise envelope of
approximately 0.07 dB/ms.
This is small enough to track background noise and not to
be influenced by speech bursts. The 120 µA current that is
sunk corresponds to a maximum fall-slope of
approximately 8.5 dB/ms. However, during the decrease
of the signal envelope, the noise envelope tracks the
signal envelope so it will never fall faster than
approximately 0.7 dB/ms. The behaviour of the signal
envelope and noise envelope monitors is illustrated in
Fig.10.
handbook, full pagewidth
DUPLEX CONTROLLER
to logic
to logic
LOG
LOG
from
microphone
amplifier
from
loudspeaker
amplifier
TSEN
TENV
TNOI
RSEN
RENV
RNOI
4
3
2
6
7
5
RTSEN
CTSEN
RRSEN
CTENV
CTNOI
CRSEN
CRENV
CRNOI
MGM302
Fig.9 Signal and noise envelope detectors.
1999 Apr 08
15
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
4 mV (RMS)
handbook, full pagewidth
MBG354
1 mV (RMS)
INPUT SIGNAL
SIGNAL ENVELOPE
A
36 mV
A
B
B
A: 85 dB/ms
B: 0.7 dB/ms
NOISE ENVELOPE
C
B
36 mV
B: 0.7 dB/ms
C: 0.07 dB/ms
B
C
time
Fig.10 Signal and noise envelope waveforms.
Decision logic: pins IDT and SWT
handbook, full pagewidth
IDT 25
DUPLEX CONTROLLER
Vref
LOGIC(1)
3 TENV
RIDT
2 TNOI
13 mV
SWT 24
ATTENUATOR
CSWT
7 RENV
5 RNOI
X
X
1
1
−10 µA
X
1
0
X
+10 µA
1
X
0
X
+10 µA
X
X
1
0
0
0
0
0
X
0
13 mV
Vdt
from logic
from dynamic
limiter
MGM303
(1) When VDLC < 0.2 V, −10 µA is forced.
Fig.11 Decision logic.
1999 Apr 08
16
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
The switch-over time from Idle mode to transmit mode or
receive mode is approximately 4 ms (180 mV swing on
SWT).
The TEA1099H selects its mode of operation (transmit,
receive or Idle mode) by comparing the signal and the
noise envelopes of both channels. This is executed by the
decision logic. The resulting voltage on pin SWT is the
input for the voice switch.
The switch-over time, from receive mode or transmit mode
to Idle mode is equal to 4 × RIDTCSWT and is approximately
2 seconds (Idle mode time).
To facilitate the distinction between signal and noise, the
signal is considered as speech when its envelope is more
than 4.3 dB above the noise envelope. At room
temperature, this is equal to a voltage difference
VENV − VNOI = 13 mV. This so called speech/noise
threshold is implemented in both channels.
The input DLC overrules the decision logic. When the
voltage on pin DLC goes lower than 0.2 V, the capacitor
CSWT is discharged with 10 µA thus resulting in the
transmit mode.
The signal on pin TXIN contains both the speech and the
input signal from the loudspeaker (acoustic coupling).
When receiving, the contribution from the loudspeaker
overrules the speech. As a result, the signal envelope on
TENV is formed mainly by the loudspeaker signal.
To correct this, an attenuator is connected between TENV
and the TENV/RENV comparator. Its attenuation equals
that applied to the microphone amplifier.
Table 1
Modes of TEA1099H
VSWT − VIDT (mV)
<−180
0
>180
MODE
transmit mode
Idle mode
receive mode
Voice-switch: pins STAB and SWR
When a dial tone is present on the line, without monitoring,
the tone would be recognized as noise because it is a
signal with a constant amplitude. This would cause the
TEA1099H to go into the Idle mode and the user of the set
would hear the dial tone fade away. To prevent this, a dial
tone detector is incorporated which, in standard
applications, does not consider input signals between
HFRX and GND as noise when they have a level greater
than 25 mV (RMS). This level is proportional to RRSEN.
A diagram of the voice-switch is illustrated in Fig.12. With
the voltage on SWT, the TEA1099H voice-switch
regulates the gains of the transmit and the receive
channels so that the sum of both is kept constant.
In the transmit mode, the gain of the microphone amplifier
is at its maximum and the gain of the loudspeaker amplifier
is at its minimum. In the receive mode, the opposite
applies. In the Idle mode, both microphone and
loudspeaker amplifier gains are halfway. The difference
between maximum and minimum is the so called switching
range. This range is determined by the ratio of
RSWR and RSTAB and is adjustable between 0 and 52 dB.
RSTAB should be 3.65 kΩ and sets an internally used
reference current. In the basic application diagram given in
Fig.16, RSWR is 365 kΩ which results in a switching range
of 40 dB. The switch-over behaviour is illustrated in Fig.13.
In the same way, a transmit detector is integrated which, in
standard applications, does not consider input signals
between TXIN and GNDTX as noise when they have a
level greater than 0.75 mV (RMS). This level is
proportional to RTSEN.
The output of the decision logic is a current source
(see Fig.11). The logic table gives the relationship
between the inputs and the value of the current source.
It can charge or discharge the capacitor CSWT with a
current of 10 µA (switch-over). If the current is zero, the
voltage on SWT becomes equal to the voltage on IDT via
the high-ohmic resistor RIDT (idling). The resulting voltage
difference between SWT and IDT determines the mode of
the TEA1099H and can vary between −400 and +400 mV
(see Table 1).
In the receive mode, the gain of the loudspeaker amplifier
can be reduced using the volume control. Since the voice
switch keeps the sum of the gains constant, the gain of the
microphone amplifier is increased at the same time (see
dashed curves in Fig.13). In the transmit mode, however,
the volume control has no influence on the gain of the
microphone amplifier or the gain of the loudspeaker
amplifier. Consequently, the switching range is reduced
when the volume is reduced. At maximum reduction of
volume, the switching range becomes 0 dB.
The switch-over timing can be set with CSWT, the Idle
mode timing with CSWT and RIDT. In the basic application
given in Fig.16, CSWT is 220 nF and RIDT is 2.2 MΩ. This
enables a switch-over time from transmit to receive mode
or vice-versa of approximately 13 ms (580 mV swing on
SWT).
1999 Apr 08
TEA1099H
17
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
handbook, full pagewidth
DUPLEX CONTROLLER
to
microphone
amplifier
from
SWT
Gvtx + Gvrx = C(1)
VOICE SWITCH
from
volume
control
STAB
21
RSTAB
SWR
22
RSWR
to
loudspeaker
amplifier
MGM304
(1) C = constant.
Fig.12 Voice switch.
Tx mode
Gvtx, Gvrx
(10 dB/div)
MGM305
idle
mode
handbook, halfpage
Rx mode
RVOL
(Ω)
Gvtx
11400
7600
3800
0
0
3800
7600
11400
Gvrx
−400
−200
0
+200
+400
VSWT − VIDT (mV)
Fig.13 Switch-over behaviour.
1999 Apr 08
18
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
Logic inputs
Table 2
Selection of transmit and receive channels for 13 different application modes
LOGIC INPUTS
FEATURES
APPLICATION
EXAMPLES
PD
HFC
MUTT
MUTR
AUXC
0
X
X
X
1
0
X
X
X
0
1
0
0
0
0
DTMF to LN; DTMF to RECO;
QR and MICS are active
DTMF dialling in handset
mode
1
0
0
1
0
MIC to AUXO; RAUX to RECO;
QR and MICS are active
cordless intercom with
corded handset
1
0
1
1
0
MICS to LN; IR to RECO; IR to AUXO
handset conversation
MIC to TXOUT; QR and MICS are active
1
0
1
0
1
TXAUX to LN; IR to AUXO
conversation using
auxiliary I/O such as
cordless conversation
1
1
1
1
1
TXIN to TXOUT; HFTX to LN;
IR to RECO; HFRX to AUXO
cordless: HF mode in
cordless handset
1
1
0
1
1
RAUX to RECO; HFRX to LSAO
listening on the loudspeaker
1
1
0
0
1
TXAUX to LN; IR to AUXO;
RAUX to RECO; HFRX to LSAO
answering machine: play
and record messages;
listen to the recorded
message on the
loudspeaker
1
1
0
0
0
DTMF to LN; DTMF to RECO;
HFRX to LSAO; QR and MICS are
active
DTMF dialling in HF/GL
modes
1
1
1
0
1
TXAUX to LN; IR to AUXO;
IR to RECO; HFRX to LSAO
answering machine: play
and record messages while
listening on the loudspeaker
1
1
0
1
0
TXIN to TXOUT; HFTX to AUXO;
RAUX to RECO; HFRX to LSAO;
MICS is active
cordless intercom with base
1
1
1
1
0
TXIN to TXOUT; HFTX to LN;
IR to RECO; IR to AUXO;
HFRX to LSAO; MICS is active
HF conversation mode
1
1
1
0
0
MIC to LN; IR to RECO; IR to AUXO;
HFRX to LSAO; MIC to TXOUT; QR;
MICS is active
handset conversation with
group-listening
1999 Apr 08
HFRX to LSAO
ringer mode
flash, DC dialling
19
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); all DC levels are referenced to GND.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
positive continuous line voltage
−0.4
+12
V
repetitive line voltage during switch-on or line
interruption
−0.4
+13.2
V
VESI
positive continuous voltage on pin ESI
−0.4
+6
V
Ii(ESI)
input current at pin ESI
−
140
mA
Vn(max)
maximum voltage
on pins REG, SLPE, IR and AGC
−0.4
VLN + 0.4
V
on all other pins except VDD
−0.4
VBB + 0.4
V
−
140
mA
−
720
mW
VLN
Iline(max)
maximum line current
Ptot
total power dissipation
Tstg
IC storage temperature
−40
+125
°C
Tamb
operating ambient temperature
−25
+75
°C
Tamb = 75 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
1999 Apr 08
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
20
in free air
VALUE
UNIT
63
K/W
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
FCA029
160
handbook, full pagewidth
Iline
(mA)
(1)
(2)
120
(3)
(4)
80
(5)
40
0
3
4
5
6
7
8
Fig.14 Safe operating area.
1999 Apr 08
21
9
10
11
VSLPE (V)
12
LINE
Tamb (°C)
Ptot (mW)
(1)
35
1304
(2)
45
1158
(3)
55
1012
(4)
65
866
(5)
75
720
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
CHARACTERISTICS
Iline = 15 mA; RSLPE = 20 Ω; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; AGC pin connected to LN; PD = HIGH; HFC = LOW;
AUXC = LOW; MUTT = HIGH; MUTR = HIGH; measured according to test circuits; all DC levels are referenced to
GND; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
LINE INTERFACE AND INTERNAL SUPPLY (PINS LN, SLPE, REG AND VBB)
VSLPE
stabilized voltage between SLPE
and GND (Vref)
Iline = 15 mA
3.4
3.7
4
V
Iline = 70 mA
5.7
6.1
6.5
V
regulated supply voltage for
internal circuitry
Iline = 15 mA
2.75
3.0
3.25
V
Iline = 70 mA
4.9
5.3
5.7
V
Iline
line current for voltage increase
start current
−
18
−
mA
stop current
−
45
−
mA
∆VSLPE(T)
stabilized voltage variation with
temperature referenced to 25 °C
Tamb = −25 to +75 °C
−
±60
−
mV
∆VBB(T)
regulated voltage variation with
temperature referenced to 25 °C
Tamb = −25 to +75 °C
−
±30
−
mV
IBB
current available on pin VBB
VBB
VLN
line voltage
speech mode
−
11
−
mA
handsfree mode
−
9
−
mA
Iline = 1 mA
−
1.55
−
V
Iline = 4 mA
−
2.35
−
V
Iline = 15 mA
3.7
4.0
4.3
V
Iline = 140 mA
−
8.9
9.5
V
−
−
6
V
EXTERNAL SUPPLY (PIN ESI)
VESI
external voltage supply allowed
on pin ESI
voltage on pin ESI when supplied
by a current source
IESI = 140 mA except in
Power-down mode
−
6.6
−
V
Ii(ESI)
input current on pin ESI
VESI = 3.5 V
−
3.1
−
mA
IESI(ext)
external current supply allowed
on pin ESI
−
−
140
mA
VBB > 3.35 V + 0.25 V
(typ.)
3.1
3.35
3.6
V
otherwise
−
VBB − 0.25 −
V
SUPPLY FOR PERIPHERALS (PIN VDD)
VDD
regulated supply voltage on VDD
∆VDD(T)
regulated voltage variation with
temperature referenced to 25 °C
Tamb = −25 to + 75 °C;
VBB > 3.35 V + 0.25 V
(typ.)
−
±30
−
mV
IDD
current consumption on VDD
(capacitor disconnected)
in trickle mode;
Iline = 0 mA; VDD = 1.5 V;
VBB discharging
−
15
150
nA
VDD > 3.35 V
60
100
−
µA
VDD = 3.35 V
−
−
−3
mA
IDD(o)
1999 Apr 08
current available for peripherals
22
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
SUPPLY FOR MICROPHONE (PIN MICS)
VMICS
supply voltage for a microphone
IMICS
current available on MICS
IMICS = 0 mA
−
2.0
−
V
−
−
−1
mA
POWER-DOWN INPUT (PIN PD)
VIL
LOW-level input voltage
−0.4
−
0.3
V
VIH
HIGH-level input voltage
1.8
−
VBB + 0.4
V
Ii(pd)
input current
IBB(pd)
current consumption on VBB
during power-down phase
−
−3
−6
µA
PD = LOW;
AUXC = LOW
−
460
−
µA
RINGER MODE (PINS PD, AUXC, HFRX AND LSAO)
Ii(ESI)
input current on pin ESI
PD = LOW;
AUXC = HIGH;
VESI = 3.5 V
−
3.1
−
mA
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
PD = LOW;
AUXC = HIGH;
VESI = 3.5 V;
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ
−
28
−
dB
Preamplifier inputs (pins MIC+, MIC−, IR, DTMF, TXIN, HFTX, HFRX, TXAUX and RAUX)
Zi(MIC)
input impedance
differential between
pins MIC+ and MIC−
−
70
−
kΩ
single-ended between
pins MIC+/MIC− and GNDTX
−
35
−
kΩ
Zi(IR)
input impedance between pins IR
and LN
−
20
−
kΩ
Zi(DTMF)
input impedance between pins
DTMF and GND
−
20
−
kΩ
Zi(TXIN)
input impedance between pins
TXIN and GNDTX
−
20
−
kΩ
Zi(HFTX)
input impedance between pins
HFTX and GND
−
20
−
kΩ
Zi(HFRX)
input impedance between pins
HFRX and GND
−
20
−
kΩ
Zi(TXAUX)
input impedance between pins
TXAUX and GND
−
20
−
kΩ
Zi(RAUX)
input impedance between pins
RAUX and GND
−
20
−
kΩ
1999 Apr 08
23
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
TX amplifiers
TX HANDSET MICROPHONE AMPLIFIER (PINS MIC+, MIC− AND LN); note 1
Gv(MIC-LN)
voltage gain from pin MIC+/MIC−
to LN
VMIC = 5 mV (RMS)
43.3
44.3
45.3
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
CMRR
common mode rejection ratio
−
80
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
Iline = 4 mA;
VLN = 0.12 V (RMS)
−
−
10
%
Vno(LN)
noise output voltage at pin LN;
pins MIC+/MIC− shorted through
200 Ω
psophometrically
weighted (p53 curve)
−
−77.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW;
60
80
−
dB
DTMF AMPLIFIER (PINS DTMF, LN AND RECO); note 1
Gv(DTMF-LN)
voltage gain from pin DTMF to LN VDTMF = 50 mV (RMS)
24.35 25.35
26.35
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = HIGH;
MUTR = HIGH;
AUXC = LOW
60
80
−
dB
Gv(DTMF-RECO)
voltage gain from pin DTMF to
RECO
VDTMF = 50 mV (RMS)
−
−16.5
−
dB
TX AUXILIARY AMPLIFIER USING TXAUX (PINS TXAUX AND LN); note 1
Gv(TXAUX-LN)
voltage gain from pin TXAUX to
LN
VTXAUX = 0.1 V (RMS)
11.5
12.5
13.5
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
VTXAUX(rms)
maximum input voltage at TXAUX Iline = 70 mA; THD = 2%
(RMS value)
−
1.2
−
V
Vno(LN)
noise output voltage at pin LN; pin psophometrically
TXAUX shorted to GND through
weighted (p53 curve)
200 Ω in series with 10 µF
−
−80.5
−
dBmp
1999 Apr 08
24
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
∆Gv(mute)
PARAMETER
gain reduction if not activated
CONDITIONS
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
TEA1099H
MIN.
TYP.
MAX.
UNIT
60
80
−
dB
TX AMPLIFIER USING HFTX (PINS HFTX AND LN); note 1
Gv(HFTX-LN)
voltage gain from pin HFTX to LN VHFTX = 15 mV (RMS)
33.5
34.7
35.9
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
THD
total harmonic distortion at LN
VLN = 1.4 V (RMS)
−
−
2
%
VHFTX(rms)
maximum input voltage at HFTX
(RMS value)
Iline = 70 mA; THD = 2%
−
95
−
mV
Vno(LN)
noise output voltage at pin LN; pin psophometrically
HFTX shorted to GND through
weighted (p53 curve)
200 Ω in series with 10 µF
−
−77.5
−
dBmp
∆Gv(mute)
gain reduction if not activated
60
80
−
dB
HFC = LOW;
MUTT = HIGH;
MUTR = LOW;
AUXC = HIGH
MICROPHONE MONITORING ON TXOUT (PINS MIC+, MIC− AND TXOUT); note 1
Gv(MIC-TXOUT)
voltage gain from pin MIC+/MIC−
to TXOUT
VMIC = 2 mV (RMS)
48.3
49.8
51.3
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.35
−
dB
RX amplifiers
RX AMPLIFIERS USING IR (PINS IR AND RECO); note 1
Gv(IR-RECO)
voltage gain from pin IR
(referenced to LN) to RECO
VIR = 15 mV (RMS)
28.7
29.7
30.7
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 30 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VIR(rms)(max)
maximum input voltage on IR
(referenced to LN) (RMS value)
Iline = 70 mA; THD = 2%
−
50
−
mV
THD = 2%
0.75
0.9
−
V
−
−88
−
dBVp
VRECO(rms)(max) maximum output voltage on
RECO (RMS value)
Vno(RECO)(rms)
1999 Apr 08
noise output voltage at pin RECO; psophometrically
pin IR is an open circuit
weighted (p53 curve)
(RMS value)
25
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
∆Gv(mute)
PARAMETER
gain reduction if not activated
CONDITIONS
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
TEA1099H
MIN.
TYP.
MAX.
UNIT
60
80
−
dB
−3
−
+15
dB
RX EARPIECE AMPLIFIER (PINS GARX AND QR); note 1
∆Gv(RECO-QR)
gain voltage range between pins
RECO and QR
VQR(rms)(max)
maximum output voltage on QR
(RMS value)
sine wave drive;
RL = 150 Ω; THD < 2%
0.75
0.9
−
V
Vno(QR)(rms)
noise output voltage at pin QR;
pin IR is an open-circuit (RMS
value)
Gv(QR) = 0 dB;
psophometrically
weighted (p53 curve)
−
−88
−
dBVp
RX AMPLIFIER USING RAUX (PINS RAUX AND RECO); note 1
Gv(RAUX-RECO)
voltage gain from pin RAUX to
RECO
VRAUX = 0.4 V (RMS)
−3.7
−2.4
−1.1
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.25
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.25
−
dB
VRAUX(rms)
maximum input voltage on RAUX
(RMS value)
THD = 2%
−
0.95
−
V
Vno(RECO)(rms)
noise output voltage at pin RECO; psophometrically
pin RAUX shorted to GND
weighted (p53 curve)
through 200 Ω in series with
10 µF (RMS value)
−
−100
−
dBVp
∆Gv(mute)
gain reduction if not activated
60
80
−
dB
HFC = LOW;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
Auxiliary amplifiers using AUXO
TX AUXILIARY AMPLIFIER USING MIC+ AND MIC− (PINS MIC+, MIC− AND AUXO); note 1
Gv(MIC-AUXO)
voltage gain from pin MIC+/MIC−
to AUXO
VMIC = 10 mV (RMS)
24.2
25.5
26.8
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25°C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VMIC(rms)
maximum input voltage on
MIC+/MIC− (RMS value)
THD = 2%
−
16
−
mV
Vno(AUXO)
noise output voltage at pin AUXO; psophometrically
pins MIC+/MIC− shorted to
weighted (p53 curve)
GNDTX through 200 Ω in series
with 10 µF (RMS value)
−
−91
−
dBVp
1999 Apr 08
26
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
TX AUXILIARY AMPLIFIER USING HFTX (PINS HFTX AND AUXO); note 1
Gv(HFTX-AUXO)
voltage gain from pin HFTX to
AUXO
VHFTX = 100 mV (RMS)
14.2
15.2
16.2
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.1
−
dB
VAUXO(rms)
maximum output voltage on
AUXO (RMS value)
THD = 2%
0.8
0.9
−
V
Vno(AUXO)(rms)
noise output voltage at pin AUXO; psophometrically
pin HFTX shorted to GND through weighted (p53 curve)
200 Ω in series with 10 µF
(RMS value)
−
−91.5
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = LOW;
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW
60
80
−
dB
RX AMPLIFIER USING IR (PINS IR AND AUXO); note 1
Gv(IR-AUXO)
voltage gain from pin IR (referred
to LN) to AUXO
VIR = 3 mV (RMS)
31.6
32.8
34
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
VAUXO(rms)
maximum output voltage on
AUXO (RMS value)
THD = 2%
0.8
0.9
−
V
Vno(AUXO)(rms)
noise output voltage at pin AUXO; psophometrically
pin IR is an open circuit (RMS
weighted (p53 curve)
value)
−
−85
−
dBVp
∆Gv(mute)
gain reduction if not activated
HFC = HIGH;
MUTT = LOW;
MUTR = HIGH;
AUXC = HIGH
60
80
−
dB
Iline = 70 mA; on
Gv(MIC-LN), Gv(IR-RECO)
and Gv(IR-AUXO)
5.45
6.45
7.45
dB
Iline = 70 mA for other
transmit and receive
gains affected
5.8
6.8
7.8
Automatic Gain Control (pin AGC)
∆Gv(trx)
gain control range for transmit
and receive amplifiers affected
by the AGC; with respect to
Iline = 15 mA
Istart
highest line current for maximum
gain
−
23
−
mA
Istop
lowest line current for maximum
gain
−
57
−
mA
1999 Apr 08
27
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
Logic inputs (pins HFC, AUXC, MUTT and MUTR)
VIL
LOW-level input voltage
−0.4
−
0.3
V
VIH
HIGH-level input voltage
1.8
−
VBB + 0.4
V
I
input current
for pins HFC and AUXC
−
3
6
µA
for pins MUTT and MUTR
−
−2.5
−6
µA
12.7
15.2
17.7
dB
−15
−
+16
dB
VBB = 3 V
Handsfree
HF MICROPHONE AMPLIFIER (PINS TXIN, TXOUT AND GATX); note 1
Gv(TXIN-TXOUT)
voltage gain from pin TXIN to
TXOUT
∆Gv
voltage gain adjustment with
RGATX
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.15
−
dB
Vno(TXOUT)(rms) noise output voltage at pin
TXOUT; pin TXIN is shorted
through 200 Ω in series with
10 µF to GNDTX (RMS value)
psophometrically
weighted (p53 curve)
−
−101
−
dBmp
∆Gv(mute)
HFC = HIGH;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
−
dB
25.5
28
30.5
dB
−28
−
+7
dB
gain reduction if not activated
VTXIN = 8 mV (RMS);
RGATX = 30.1 kΩ
HF LOUDSPEAKER AMPLIFIER (PINS HFRX, LSAO, GALS AND VOL); note 1
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
∆Gv
voltage gain adjustment with
RGALS
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.3
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.3
−
dB
∆Gv(vol)
voltage gain variation related to
∆RVOL = 1.9 kΩ
when total attenuation
does not exceed the
switching range
−
−3
−
dB
Iline = 70 mA
RGALS = 33 kΩ; for 2%
THD in the input stage
−
580
−
mV
−
−79
−
dBVp
VHFRX(rms)(max) maximum input voltage at pin
HFRX (RMS value)
Vno(LSAO)(rms)
1999 Apr 08
VHFRX = 20 mV (RMS);
RGALS = 255 kΩ
noise output voltage at pin LSAO; psophometrically
pin HFRX is open circuit
weighted (p53 curve)
(RMS value)
28
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
VLSAO(rms)
PARAMETER
CONDITIONS
output voltage (RMS value)
IBB = 0 mA; IDD = 1 mA
without external supply on pin ESI
Iline = 18 mA
ILSAO(max)
maximum output current at pin
LSAO (peak value)
∆Gv(mute)
gain reduction if not activated
TEA1099H
MIN.
TYP.
MAX.
UNIT
−
0.9
−
V
Iline = 30 mA
−
1.3
−
V
Iline > 50 mA
−
1.6
−
V
150
300
−
mA
HFC = HIGH;
MUTT = HIGH;
MUTR = HIGH;
AUXC = HIGH
60
80
−
dB
when VHFRX jumps from
20 mV to 20 mV + 10 dB
−
−
5
ms
when VBB jumps below
VBB(th)
−
1
−
ms
DYNAMIC LIMITER (PINS LSAO AND DLC)
tatt
attack time
trel
release time
when VHFRX jumps from
20 mV + 10 dB to 20 mV
−
100
−
ms
THD
total harmonic distortion at
VHFRX = 20 mV + 10 dB
t > tatt
−
0.1
2
%
VBB(th)
VBB limiter threshold
−
2.7
−
V
−0.4
−
+0.2
V
MUTE LOUDSPEAKER (PIN DLC)
VDLC(th)
threshold voltage required on pin
DLC to obtain mute receive
condition
IDLC(th)
threshold current sourced by pin
DLC in mute receive condition
VDLC = 0.2 V
−
100
−
µA
∆Gvrx(mute)
voltage gain reduction in mute
receive condition
VDLC = 0.2 V
60
80
−
dB
RX AMPLIFIER USING HFRX (PINS HFRX AND AUXO); note 1
Gv(HFRX-AUXO)
voltage gain from pin HFRX to
AUXO
VHFRX = 0.25 V (RMS)
1.2
3.7
6.2
dB
∆Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
−
±0.1
−
dB
∆Gv(T)
gain variation with temperature
referenced to 25 °C
Tamb = −25 to +75 °C
−
±0.4
−
dB
VHFRX(rms)
maximum input voltage at pin
HFRX (RMS value)
Iline = 70 mA; for 2% THD −
in the input stage
580
−
mV
Vno(AUXO)(rms)
noise output voltage at pin AUXO; psophometrically
pin HFRX is an open-circuit
weighted (p53 curve)
(RMS value)
−
−100
−
dBVp
∆Gv(mute)
gain reduction if not activated
60
80
−
dB
1999 Apr 08
HFC = LOW;
MUTT = LOW;
MUTR = HIGH;
AUXC = LOW
29
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
TX AND RX ENVELOPE AND NOISE DETECTORS (PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI)
Preamplifiers
Gv(TSEN)
voltage gain from pin TXIN to
TSEN
−
40
−
dB
Gv(RSEN)
voltage gain from pin HFRX to
RSEN
−
0
−
dB
Logarithmic compressor and sensitivity adjustment
∆Vdet(TSEN)
sensitivity detection on pin TSEN; ITSEN = 0.8 to 160 µA
voltage change on pin TENV
when doubling the current from
TSEN
−
18
−
mV
∆Vdet(RSEN)
sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 µA
voltage change on pin RENV
when doubling the current from
RSEN
−
18
−
mV
120
−
µA
Signal envelope detectors
Isource(ENV)
maximum current sourced from
pin TENV or RENV
−
Isink(ENV)
maximum current sunk by pin
TENV or RENV
−1.25 −1
−0.75
µA
∆VENV
voltage difference between pins
RENV and TENV
−
±3
−
mV
0.75
1
1.25
µA
when 10 µA is sourced
from both RSEN and
TSEN; signal detectors
tracking; note 2
Noise envelope detectors
Isource(NOI)
maximum current sourced from
pin TNOI or RNOI
Isink(NOI)
maximum current sunk by pin
TNOI or RNOI
dial tone detector or TX
level limiter not activated
−
−120
−
µA
∆VNOI
voltage difference between pins
RNOI and TNOI
when 5 µA is sourced
from both RSEN and
TSEN; noise detectors
tracking; note 2
−
±3
−
mV
RRSEN = 10 kΩ
−
25
−
mV
RTSEN = 10 kΩ
−
0.75
−
mV
DIAL TONE DETECTOR
VHFRX(th)(rms)
threshold level at pin HFRX
(RMS value)
TX LEVEL LIMITER
VTXIN(th)(rms)
1999 Apr 08
threshold level at pin TXIN
(RMS value)
30
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
SYMBOL
PARAMETER
CONDITIONS
TEA1099H
MIN.
TYP.
MAX.
UNIT
DECISION LOGIC (PINS IDT AND SWT)
Signal recognition
∆VSrx(th)
threshold voltage between pins
RENV and RNOI to switch-over
from receive to Idle mode
VHFRX < VHFRX(th); note 3 −
13
−
mV
∆VStx(th)
threshold voltage between pins
TENV and TNOI to switch-over
from transmit to Idle mode
VTXIN < VTXIN(th); note 3
−
13
−
mV
10.0
12.5
µA
Switch-over
Isource(SWT)
current sourced from pin SWT
when switching to receive mode
7.5
Isink(SWT)
current sunk by pin SWT when
switching to transmit mode
−12.5 −10.0
−7.5
µA
Iidle(SWT)
current sourced from pin SWT in
Idle mode
−
0
−
µA
−
40
−
dB
−40
−
+12
dB
VOICE SWITCH (PINS STAB AND SWR)
SWRA
switching range
∆SWRA
switching range adjustment
|∆Gv|
voltage gain variation from
transmit or receive mode to Idle
mode
−
20
−
dB
Gtrx
gain tracking (Gvtx + Gvrx) during
switching, referenced to Idle
mode
−
0.5
−
dB
with RSWR referenced to
365 kΩ
Notes
1. When the channel is enabled according to Table 2.
2. Corresponds to ±1 dB tracking.
3. Corresponds to 4.3 dB noise/speech recognition level.
1999 Apr 08
31
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in
_white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in
white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ...
Dz
Vd = 10 V
RSLPE
20 Ω
VIR
Cemc
SLPE
10 nF
14
Cexch
CIR
Cimp
100 µF
100 µF
IR
CREG
4.7 µF
REG
16
AGC
18
LN
VBB
ESI
15
CVDD
47 µF
CVBB
470 µF
DESI
9
10
VDD
19
37
17
100 nF
CMICS
4.7 µF
39
40
MICS
MIC+
VMIC+
38
41
20
33
31
RMIC
200 Ω
MIC−
CHFTX
HFTX
34
32
30.1 kΩ
GATX
CTXIN
TXIN
MUTT
MUTR
AUXC
QR
GARX
36
35
TEA1099H
1
HFRX
CDTMF
DTMF
Cqr
CGARS
1 nF
CHFRX
100 nF
4.7 µF
VHFRX
27
11
28
GALS
100 nF
VTXIN
RQR
150 Ω
CRXE
100 nF
RECO
26
Re2
100 kΩ
CGAR
100 pF
Re1
100 kΩ
RGATX
VHFTX
HFC
30
100 nF
TXOUT
PD
Philips Semiconductors
Zimp
620 Ω
i = 15 mA
J_line
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
600 Ω
handbook, full pagewidth
1999 Apr 08
Zexch
external supply
or
current supply
32
12
43
6
42
7
LSAO
CGALS
150 pF
RGALS
255 kΩ
100 nF
VDTMF
CTXAUX
TXAUX
RSEN
100 nF
CRAUX
VTXAUX
VRAUX
RAUX
TSEN
TENV
TNOI
RTSEN
10 kΩ
4
CLSAO
220 µF
5
2
13
21
22
GNDTX STAB
RSTAB
3.65
kΩ
23
SWR
RSWR
365
kΩ
8
VOL
24
DLC
25
IDT
SWT
RRSEN
RIDT
2.2 MΩ
10 kΩ
RLSAO
50 Ω
RVOL
0 to
22 kΩ
CDLC
470 nF
CSWT
220 nF
CRNOI
4.7 µF
CRENV
470 nF
CRSEN
100 nF
FCA021
Fig.15 Test circuit.
Product specification
CTNOI
4.7 µF
29
TEA1099H
CTENV
470 nF
RNOI
3
GND
CTSEN
100 nF
RENV
100 nF
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
APPLICATION INFORMATION
handbook, full pagewidth
Cbal
220 nF
Rbal2
820 Ω
RSLPE
Zimp
620 Ω
Dz
Vd
10 V
4.7 µF
Rast3
DESI
392 Ω
Cemc
10 nF
external
supply
CREG
20 Ω
Rbal1
130 Ω
SLPE
Rast2
3.92 kΩ
REG
14
CIR
Cimp
22 µF
IR
16
AGC
18
LN
15
ESI
9
CVBB
470 µF
VBB
10
CVDD
47 µF
VDD
19
17
100 nF
38
Rast1
130 kΩ
D2
37
D3
41
39
MICS
MICS
RMICP
1 kΩ
handset
microphone
Ctx2
CMICS
4.7 µF
Rtx2
CMICH 22 nF
33 nF Ctx1
MIC+
20
40
31
15 kΩ R
tx3
Rtx1 8.2 kΩ
33
30
RMICM
1 kΩ
CHFTX
34
HFTX
100 nF TXOUT
A
RGATX
30.1 kΩ
from MICS
B
CTXIN
handsfree
microphone
CMICB
AUXC
from
controller
MUTT
MUTR
AUXO
CAUXO
CQR
10 µF
TXIN
QR
GARX
Re2
CGAR
100 pF
100 kΩ
Re1
36
100 kΩ
26
CGARS
1 nF
CRXE
TEA1099H
GATX
RBMICS
2 kΩ
HFC
100 nF
MIC−
15 kΩ
22 nF
44
PD
35
100 nF
RECO
CHFRX
27
1
100 nF
HFRX
28
100 nF
22 nF
CDTMF
CTXAUX 100 nF
100 nF C
RAUX
DTMF
TXAUX
RAUX
11
GALS
32
12
43
LSAO
RGALS
CGALS
CLSAO
255 kΩ
150 pF
220 µF
42
100 nF
D1
D4
TSEN
TENV
TNOI
4
6
3
7
2
5
RTSEN
10 kΩ
25
13
GND
CTSEN
100
nF
CTENV
470
nF
29
21
22
GNDTX STAB
CTNOI
4.7
µF
RSTAB
3.65
kΩ
23
SWR
8
VOL
RSWR
365
kΩ
RVOL
0 to
22 kΩ
RSEN
RENV
RNOI
RRSEN
IDT
10 kΩ
RIDT
24
DLC
SWT
CDLC
470
nF
CSWT
220
nF
2.2 MΩ
CRNOI
4.7
µF
CRENV
470
nF
CRSEN
100
nF
MGM306
Fig.16 Basic application diagram.
1999 Apr 08
33
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
PACKAGE OUTLINE
QFP44: plastic quad flat package; 44 leads (lead length 1.3 mm); body 10 x 10 x 1.75 mm
SOT307-2
c
y
X
A
33
23
34
22
ZE
e
E HE
A A2
wM
(A 3)
A1
θ
bp
Lp
pin 1 index
L
12
44
1
detail X
11
wM
bp
e
ZD
v M A
D
B
HD
v M B
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HD
HE
L
Lp
v
w
y
mm
2.10
0.25
0.05
1.85
1.65
0.25
0.40
0.20
0.25
0.14
10.1
9.9
10.1
9.9
0.8
12.9
12.3
12.9
12.3
1.3
0.95
0.55
0.15
0.15
0.1
Z D (1) Z E (1)
1.2
0.8
1.2
0.8
θ
o
10
0o
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-02-04
97-08-01
SOT307-2
1999 Apr 08
EUROPEAN
PROJECTION
34
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
If wave soldering is used the following conditions must be
observed for optimal results:
SOLDERING
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
1999 Apr 08
TEA1099H
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
35
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
TEA1099H
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
REFLOW(1)
WAVE
BGA, SQFP
not suitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not
PLCC(3),
SO, SOJ
suitable
suitable(2)
suitable
suitable
suitable
LQFP, QFP, TQFP
not recommended(3)(4)
suitable
SSOP, TSSOP, VSO
not recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Apr 08
36
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
37
TEA1099H
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
38
TEA1099H
Philips Semiconductors
Product specification
Speech and handsfree IC with auxiliary
inputs/outputs and analog multiplexer
NOTES
1999 Apr 08
39
TEA1099H
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1999
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
465002/750/03/pp40
Date of release: 1999 Apr 08
Document order number:
9397 750 04985