INTEGRATED CIRCUITS DATA SHEET TEA1112; TEA1112A Low voltage versatile telephone transmission circuits with dialler interface Product specification Supersedes data of 1996 Feb 16 File under Integrated Circuits, IC03 1997 Mar 26 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A FEATURES APPLICATION • Low DC line voltage; operates down to 1.6 V (excluding polarity guard) • Line powered telephone sets, cordless telephones, fax machines and answering machines. • Voltage regulator with adjustable DC voltage • Provides a supply for external circuits GENERAL DESCRIPTION • Symmetrical high impedance inputs (64 kΩ) for dynamic, magnetic or piezo-electric microphones The TEA1112; TEA1112A are bipolar integrated circuits that perform all speech and line interface functions required in fully electronic telephone sets. They perform electronic switching between speech and dialling. The ICs operate at a line voltage down to 1.6 V DC (with reduced performance) to facilitate the use of telephone sets connected in parallel. • Asymmetrical high impedance input (32 kΩ) for electret microphones • DTMF input with confidence tone • Mute input for pulse or DTMF dialling (MUTE for TEA1112 and MUTE for TEA1112A) A current (proportional to the line current and internally limited to a typical value of 19.5 mA) is available to drive an LED which indicates the on-hook/off-hook status. • Receiving amplifier for dynamic, magnetic or piezo-electric earpieces • AGC line loss compensation for microphone and earpiece amplifiers The microphone amplifier can be disabled during speech condition by means of a microphone mute function. • LED on-hook/off-hook status indication All statements and values refer to all versions unless otherwise specified. • Microphone mute function (MMUTE for TEA1112 and MMUTE for TEA1112A). QUICK REFERENCE DATA Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. 11 TYP. − MAX. UNIT 140 mA Iline line current operating range normal operation with reduced performance 1 − 11 mA ILED(max) maximum supply current available Iline = 18 mA − 0.5 − mA Iline > 76 mA − 19.5 − mA VLN DC line voltage 3.35 3.65 3.95 V ICC internal current consumption VCC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals Ip = 0 mA − 2.9 − V Gvtrx typical voltage gain range microphone amplifier VMIC = 2 mV (RMS) 38.8 − 51.8 dB receiving amplifier VIR = 6 mV (RMS) 19.2 − 31.2 dB Iline = 85 mA − 5.8 − dB − 80 − dB ∆Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA ∆Gvtxm microphone amplifier gain reduction 1997 Mar 26 2 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TEA1112 DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4 TEA1112A DIP16 plastic dual in-line package; 16 leads (300 mil) SOT38-4 TEA1112T SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 TEA1112AT SO16 plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 BLOCK DIAGRAM MUTE or QR MUTE GAR handbook, full pagewidth 15 IR 9 14 8 V− I 16 VCC 1 V− I LN DTMF 7 ATT. CURRENT REFERENCE V− I 5 MIC GAS 12 4 REG V− I MIC MMUTE or MMUTE 11 6 MICRO MUTE AGC CIRCUIT LOW VOLTAGE CIRCUIT TEA1112 TEA1112A LED DRIVER 13 10 3 2 MBE793 SLPE VEE AGC ILED Fig.1 Block diagram. 1997 Mar 26 3 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A PINNING PIN SYMBOL DESCRIPTION TEA1112 TEA1112A LN 1 1 positive line terminal SLPE 2 2 slope (DC resistance) adjustment ILED 3 3 available output current to drive a LED REG 4 4 line voltage regulator decoupling GAS 5 5 sending gain adjustment MMUTE 6 − microphone mute input MMUTE − 6 microphone mute input (active LOW) DTMF 7 7 dual-tone multi-frequency input MUTE 8 − mute input to select speech or dialling mode MUTE − 8 mute input to select speech or dialling mode (active LOW) IR 9 9 receiving amplifier input AGC 10 10 automatic gain control/line loss compensation MIC− 11 11 inverting microphone amplifier input MIC+ 12 12 non-inverting microphone amplifier input VEE 13 13 negative line terminal QR 14 14 receiving amplifier output GAR 15 15 receive gain adjustment VCC 16 16 supply voltage for speech circuit and peripherals handbook, halfpage handbook, halfpage LN 1 16 VCC LN 1 16 VCC SLPE 2 15 GAR SLPE 2 15 GAR ILED 3 14 QR ILED 3 13 VEE REG 4 GAS 5 12 MIC+ GAS 5 12 MIC+ MMUTE 6 11 MIC− MMUTE 6 11 MIC− DTMF 7 10 AGC DTMF 7 10 AGC MUTE 8 9 IR MUTE 8 9 IR REG 4 TEA1112 TEA1112A MBE791 13 VEE MBE790 Fig.2 Pin configuration (TEA1112). 1997 Mar 26 14 QR Fig.3 Pin configuration (TEA1112A). 4 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A Where: FUNCTIONAL DESCRIPTION Iline = line current All data given in this chapter are typical values, except when otherwise specified. ICC = current consumption of the IC Ip = supply current for peripheral circuits Supply (pins LN, SLPE, VCC and REG) I* = current consumed between LN and VEE The supply for the TEA1112; TEA1112A and their peripherals is obtained from the telephone line. ILED = supply current for the LED component Ish = the excess line current shunted to SLPE (and VEE) via LN. The ICs generate a stabilized reference voltage (Vref) between pins LN and SLPE. This reference voltage is equal to 3.35 V, is temperature compensated and can be adjusted by means of an external resistor (RVA). It can be increased by connecting the RVA resistor between pins REG and SLPE (see Fig.5), or decreased by connecting the RVA resistor between pins REG and LN. The voltage at pin REG is used by the internal regulator to generate the stabilized reference voltage and is decoupled by a capacitor (CREG) which is connected to VEE. This capacitor, converted into an equivalent inductance (see Section “Set impedance”), realizes the set impedance conversion from its DC value (RSLPE) to its AC value (RCC in the audio-frequency range). The voltage at pin SLPE is proportional to the line current. Figure 4 illustrates the supply configuration. The preferred value for RSLPE is 20 Ω. Changing RSLPE will affect more than the DC characteristics; it also influences the microphone and DTMF gains, the LED supply current characteristic, the gain control characteristics, the sidetone level and the maximum output swing on the line. The ICs regulate the line voltage at pin LN, and can be calculated as follows: The internal circuitry of the TEA1112; TEA1112A is supplied from pin VCC. This voltage supply is derived from the line voltage by means of a resistor (RCC) and must be decoupled by a capacitor CVCC. It may also be used to supply peripheral circuits such as dialling or control circuits. The VCC voltage depends on the current consumed by the IC and the peripheral circuits as shown by the formula (see also Figs.6 and 7). RCCint is the internal impedance of the voltage supply point, and Irec is the current consumed by the output stage of the earpiece amplifier. V LN = V ref + R SLPE × I SLPE V CC = V CC0 – R CCint × ( I p – I rec ) I SLPE = I line – I CC – I p – I∗ = I LED + I sh V CC0 = V LN – R CC × I CC Rline RCC handbook, full pagewidth 619 Ω Iline LN ILED Rexch VCC Rp TEA1112 TEA1112A 15.5 kΩ LED DRIVER ICC RGASint Ish ILED IP from pre amp 69 kΩ CVCC 100 µF I* peripheral circuits Vd Vexch Rd 45.5 kΩ SLPE ISLPE REG RSLPE CREG 20 Ω 4.7 µF VEE MBE789 Fig.4 Supply configuration. 1997 Mar 26 5 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A For line currents higher than a threshold, ILEDstart, the ILED current increases proportionally to the line current (with a ratio of one third). The ILED current is internally limited to 19.5 mA (see Fig.9). If no LED device is used in the application, the ILED pin should be shorted to pin SLPE. MGD176 6.0 handbook, halfpage Vref (V) I line – 17 For 17 mA < Iline < 77 mA: I LED = --------------------3 5.0 This LED driver is referenced to SLPE. Consequently, all the ILED supply current will flow through the RSLPE resistor. The AGC characteristics are not disturbed (see Fig.4). 4.0 Microphone amplifier (pins MIC+, MIC− and GAS) (1) The TEA1112; TEA1112A have symmetrical microphone inputs. The input impedance between pins MIC+ and MIC− is 64 kΩ (2 × 32 kΩ). The voltage gain from pins MIC+/MIC− to pin LN is set at 51.8 dB (typ). The gain can be decreased by connecting an external resistor RGAS between pins GAS and REG. The adjustment range is 13 dB. A capacitor CGAS connected between pins GAS and REG can be used to provide a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAS × (RGASint // RGAS). RGASint is the internal resistor which sets the gain with a typical value of 69 kΩ. (2) 3.0 104 105 106 RVA (Ω) 107 (1) Influence of RVA on Vref. (2) Vref without influence of RVA. Fig.5 Reference voltage adjustment by RVA. Automatic gain control is provided on this amplifier for line loss compensation. The DC line current flowing into the set is determined by the exchange supply voltage (Vexch), the feeding bridge resistance (Rexch), the DC resistance of the telephone line (Rline) and the reference voltage (Vref). With line currents below 7.5 mA, the internal reference voltage (generating Vref) is automatically adjusted to a lower value. This means that more sets can operate in parallel with DC line voltages (excluding the polarity guard) down to an absolute minimum voltage of 1.6 V. At currents below 7.5 mA, the circuit has limited sending and receiving levels. This is called the low voltage area. Microphone mute (pin MMUTE; TEA1112) The microphone amplifier can be disabled by activating the microphone mute function. When MMUTE is LOW, the normal speech mode is entered, depending on the level on MUTE (see Table 1). When MMUTE is HIGH, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC− is attenuated; the gain reduction is 80 dB (typ). Set impedance Microphone mute (pin MMUTE; TEA1112A) In the audio frequency range, the dynamic impedance is mainly determined by the RCC resistor. The equivalent impedance of the circuits is illustrated in Fig.8. The microphone amplifier can be disabled by activating the microphone mute function. When MMUTE is LOW, the microphone amplifier inputs are disabled while the DTMF input is enabled (no confidence tone is provided). The voltage gain between LN and MIC+/MIC− is attenuated; the gain reduction is 80 dB (typ). When MMUTE is HIGH, the normal speech mode is entered, depending on the level on MUTE (see Table 1). LED supply (pin ILED) The TEA1112; TEA1112A give an on-hook/off-hook status indication. This is achieved by a current made available to drive an LED connected between pins ILED and LN. In the low voltage area, which corresponds to low line current conditions, no current is available for this LED. 1997 Mar 26 6 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A Receiving amplifier (pins IR, GAR and QR) Mute function (pin MUTE; TEA1112) The receiving amplifier has one input (IR) and one output (QR). The input impedance between pin IR and pin VEE is 20 kΩ. The voltage gain from pin IR to pin QR is set at 31.2 dB (typ). The gain can be decreased by connecting an external resistor RGAR between pins GAR and QR; the adjustment range is 12 dB. Two external capacitors CGAR (connected between GAR and QR) and CGARS (connected between GAR and VEE) ensure stability. The CGAR capacitor provides a first-order low-pass filter. The cut-off frequency corresponds to the time constant CGAR × (RGARint // RGAR). RGARint is the internal resistor which sets the gain with a typical value of 100 kΩ. The relationship CGARS = 10 × CGAR must be fulfilled to ensure stability. The mute function performs the switching action between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). When MUTE is HIGH, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. Mute function (pin MUTE; TEA1112A) The mute function performs the switching between the speech mode and the dialling mode. When MUTE is LOW or open-circuit, the DTMF input is enabled and the microphone and receiving amplifiers inputs are disabled. When MUTE is HIGH, the microphone and receiving amplifiers inputs are enabled while the DTMF input is disabled, depending on the MMUTE level (see Table 1). The output voltage of the receiving amplifier is specified for continuous wave drive. The maximum output swing depends on the DC line voltage, the RCC resistor, the ICC current consumption of the circuit, the Ip current consumption of the peripheral circuits and the load impedance. DTMF amplifier (pin DTMF) When the DTMF amplifier is enabled, dialling tones may be sent on line. These tones can be heard in the earpiece at a low level (confidence tone). Automatic gain control is provided on this amplifier for line loss compensation. The TEA1112; TEA1112A have an asymmetrical DTMF input. The input impedance between DTMF and VEE is 20 kΩ. The voltage gain from pin DTMF to pin LN is 25.5 dB. When an external resistor is connected between pins REG and GAS to decrease the microphone gain, the DTMF gain varies in the same way (the DTMF gain is 26.3 dB lower than the microphone gain with no AGC control). Automatic gain control (pin AGC) The TEA1112; TEA1112A perform automatic line loss compensation. The automatic gain control varies the gain of the microphone amplifier and the gain of the receiving amplifier in accordance with the DC line current. The control range is 5.8 dB (which corresponds approximately to a line length of 5 km for a 0.5 mm diameter twisted-pair copper cable with a DC resistance of 176 Ω/km and an average attenuation of 1.2 dB/km). The ICs can be used with different configurations of feeding bridge (supply voltage and bridge resistance) by connecting an external resistor RAGC between pins AGC and VEE. This resistor enables the Istart and Istop line currents to be increased (the ratio between Istart and Istop is not affected by the resistor). The AGC function is disabled when pin AGC is left open-circuit. 1997 Mar 26 The automatic gain control has no effect on the DTMF amplifier. 7 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A MBE783 2.5 handbook, halfpage IP (mA) 2 handbook, halfpage RCCint 1.5 1 VCC Irec VCCO (2) 0.5 PERIPHERAL CIRCUIT IP (1) MBE792 VEE 0 0 1 2 3 VCC (V) 4 (1) With RVA resistor. (2) Without RVA resistor. Fig.6 Typical current Ip available from VCC for peripheral circuits at Iline = 15 mA. Fig.7 VCC supply voltage for peripherals. MBE784 100 handbook, halfpage I (mA) handbook, halfpage LN ISLPE 80 LEQ RP RCC 619 Ω REG VCC 60 Vref SLPE RSLPE CREG 20 Ω 4.7 µF VEE Ish 40 CVCC 100 µF ILED 20 MBE788 0 0 20 40 60 80 100 Iline (mA) LEQ = CREG × RSLPE × RP. RP = internal resistance. RP = 15.5 kΩ. Fig.8 Equivalent impedance between LN and VEE. 1997 Mar 26 Fig.9 Available current to drive an LED. 8 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A MUTE and MMUTE levels for different modes Table 1 Required MUTE and MMUTE levels to enable the different possible modes IC TEA1112 Mode MUTE TEA1112A MMUTE MUTE MMUTE Speech L L H H DTMF dialling H X L X Microphone mute L H H L be for an average line length which gives satisfactory sidetone suppression with short and long lines. The suppression also depends on the accuracy of the match between Zbal and the impedance of the average line. SIDETONE SUPPRESSION The TEA1112; TEA1112A anti-sidetone network comprising RCC // Zline, Rast1, Rast2, Rast3, RSLPE and Zbal (see Fig.10) suppresses the transmitted signal in the earpiece. Maximum compensation is obtained when the following conditions are fulfilled: The anti-sidetone network for the TEA1112; TEA1112A (as shown in Fig.14) attenuates the receiving signal from the line by 32 dB before it enters the receiving amplifier. The attenuation is almost constant over the whole audio frequency range. A Wheatstone bridge configuration (see Fig.11) may also be used. R SLPE × R ast1 = R CC × ( R ast2 + R ast3 ) ( R ast2 × ( R ast3 + R SLPE ) ) k = ---------------------------------------------------------------------( R ast1 × R SLPE ) More information on the balancing of an anti-sidetone bridge can be obtained in our publication “Applications Handbook for Wired Telecom Systems, IC03b”, order number 9397 750 00811. Z bal = k × Z line The scale factor k is chosen to meet the compatibility with a standard capacitor from the E6 or E12 range for Zbal. In practice, Zline varies considerably with the line type and the line length. Therefore, the value chosen for Zbal should LN handbook, full pagewidth Zline RCC Rast1 Im VEE IR Zir Rast2 RSLPE Rast3 SLPE Zbal MBE787 Fig.10 Equivalent circuit of TEA1112; TEA1112A family anti-sidetone bridge. 1997 Mar 26 9 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface handbook, full pagewidth TEA1112; TEA1112A LN RCC Zline Zbal IR Im VEE RSLPE Zir Rast1 RA SLPE MBE786 Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VLN Vn(max) PARAMETER CONDITIONS MIN. MAX. UNIT positive continuous line voltage VEE − 0.4 12 V repetitive line voltage during switch-on or line interruption VEE − 0.4 13.2 V maximum voltage on pins ILED, SLPE VEE − 0.4 VLN + 0.4 V maximum voltage on all other pins Iline line current RSLPE = 20 Ω; see Figs 12 and 13 Ptot total power dissipation Tamb = 75 °C; see Figs 12 and 13 TEA1112; TEA1112A TEA1112T; TEA1112AT VEE − 0.4 VCC + 0.4 V − 140 mA − 625 mW − 416 mW Tstg IC storage temperature −40 +125 °C Tamb operating ambient temperature −25 +75 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a 1997 Mar 26 PARAMETER VALUE UNIT thermal resistance from junction to ambient in free air (TEA1112; TEA1112A) 80 K/W thermal resistance from junction to ambient in free air mounted on epoxy board 40.1 × 19.1 × 1.5 mm (TEA1112T; TEA1112AT) 130 K/W 10 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A MBE782 150 handbook, halfpage Iline (mA) (4) (3) (2) (1) 110 LINE Tamb (°C) Ptot (W) (1) 45 1.000 (2) 55 0.875 (3) 65 0.750 (4) 75 0.625 LINE Tamb (°C) Ptot (W) (1) (1) 45 0.666 (2) (2) 55 0.583 (3) (3) 65 0.500 (4) (4) 75 0.416 70 30 2 4 6 8 10 12 VLN − VSLPE (V) Fig.12 Safe operating area (TEA1112; TEA1112A). MLC202 150 handbook, halfpage I LN (mA) 130 110 90 70 50 30 2 4 6 8 10 12 V LN V SLPE (V) Fig.13 Safe operating area (TEA1112T; TEA1112AT). 1997 Mar 26 11 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A CHARACTERISTICS Iline = 15 mA; VEE = 0 V; RSLPE = 20 Ω; AGC pin connected to VEE; Zline = 600 Ω; f = 1 kHz; Tamb = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (pins VLN, VCC, SLPE and REG) Vref stabilized voltage between LN and SLPE VLN DC line voltage 3.1 3.35 3.6 V Iline = 1 mA − 1.6 − V Iline = 4 mA − 2.45 − V Iline = 15 mA 3.35 3.65 3.95 V Iline = 140 mA − − 6.9 V VLN(exR) DC line voltage with an external resistor RVA RVA(SLPE−REG) = 27 kΩ − 4.4 − V ∆VLN(T) DC line voltage variation with temperature referred to 25 °C Tamb = −25 to +75 °C − ±30 − mV ICC internal current consumption VCC = 2.9 V − 1.15 1.4 mA VCC supply voltage for peripherals Ip = 0 mA − 2.9 − V RCCint equivalent supply voltage impedance Ip = 0.5 mA − 550 620 Ω LED supply (pin ILED) Iline(h) highest line current for ILED < 0.5 mA − 18 − mA Iline(l) lowest line current for maximum ILED − 76 − mA ILED(max) maximum supply current available − 19.5 − mA differential between pins MIC+ and MIC− − 64 − kΩ single-ended between pins MIC+/MIC− and VEE − 32 − kΩ Microphone amplifier (pins MIC+, MIC− and GAS) Zi input impedance Gvtx voltage gain from MIC+/MIC− to LN VMIC = 2 mV (RMS) 50.6 51.8 53 dB ∆Gvtx(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvtx(T) gain variation with temperature referred to 25 °C Tamb = −25 to +75 °C − ±0.3 − dB CMRR common mode rejection ratio − 80 − dB ∆Gvtxr gain voltage reduction range external resistor connected between GAS and REG − − 13 dB VLN(max) maximum sending signal (RMS value) Iline = 15 mA; THD = 2% 1.4 1.7 − V Iline = 4 mA; THD = 10% − 0.8 − V noise output voltage at pin LN; pins MIC+/ MIC− shorted through 200 Ω psophometrically weighted (P53 curve) − −70.5 − dBmp Vnotx 1997 Mar 26 12 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface SYMBOL PARAMETER TEA1112; TEA1112A CONDITIONS MIN. TYP. MAX. UNIT Microphone mute (pins MMUTE; TEA1112 and MMUTE; TEA1112A) ∆Gvtxm gain reduction in microphone MUTE mode − VIL LOW level input voltage VEE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage VEE + 1.5 − VCC + 0.4 V IMMUTE input current − 1.25 3 µA − 20 − kΩ input level = HIGH 80 − dB Receiving amplifier (pins IR, QR and GAR) Zi input impedance Gvrx voltage gain from IR to QR VIR = 6 mV (RMS) 29.7 31.2 32.7 dB ∆Gvrx(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvrx(T) gain variation with temperature referred to 25 °C Tamb = −25 to +75 °C − ±0.3 − dB ∆Gvrxr gain voltage reduction range external resistor connected between GAR and QR − − 12 dB Vo(rms) maximum receiving signal (RMS value) Ip = 0 mA sine wave drive; RL = 150 Ω; THD = 2% − 0.25 − V Ip = 0 mA sine wave drive; RL = 450 Ω; THD = 2% − 0.35 − V noise output voltage at pin QR (RMS IR open-circuit; value) RL = 150 Ω; psophometrically weighted (P53 curve) − −86 − dBVp − 5.8 − dB − 26 − mA Vnorx(rms) Automatic gain control (pin AGC) ∆Gvtrx gain control range for microphone and receiving amplifiers with respect to Iline = 15 mA Istart highest line current for maximum gain 1997 Mar 26 Iline = 85 mA 13 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface SYMBOL Istop PARAMETER TEA1112; TEA1112A CONDITIONS lowest line current for minimum gain MIN. TYP. MAX. UNIT − 61 − mA − 20 − kΩ DTMF amplifier (pin DTMF) Zi input impedance Gvdtmf voltage gain from DTMF to LN in DTMF dialling or microphone MUTE mode VDTMF = 20 mV (RMS) 24.3 25.5 26.7 dB ∆Gvdtmf(f) gain variation with frequency referred to 1 kHz f = 300 to 3400 Hz − ±0.2 − dB ∆Gvdtmf(T) gain variation with temperature referred to 25 °C Tamb = −25 to +75 °C − ±0.4 − dB Gvct voltage gain from DTMF to QR (confidence tone) VDTMF = 20 mV (RMS); RL = 150 Ω − −18 − dB Mute function (pins MUTE; TEA1112 and MUTE; TEA1112A) VIL LOW level input voltage VEE − 0.4 − VEE + 0.3 V VIH HIGH level input voltage VEE + 1.5 − VCC + 0.4 V IMUTE input current ∆Gtrxm gain reduction for microphone and receiving amplifiers in DTMF dialling mode 1997 Mar 26 input level = HIGH 14 − 1.25 3 µA − 80 − dB 1997 Mar 26 VDR 95 V 15 RSLPE 20 Ω 470 kΩ Rpd1 LN TEA1112 TEA1112A 100 pF MUTE DTMF VCC ILED 4.7 µF MMUTE AGC VEE CREG SLPE GAS REG CGAS MIC− GAR MIC+ QR IR 100 µF CVCC signal from dial and control circuits Rpd2 470 kΩ BF473 supply for peripheral circuits RCC 619 Ω BC558 MGD177 Rpd3 1 MΩ BC547 470 kΩ Rpd4 Fig.14 Typical application of the TEA1112; TEA1112A in sets with Pulse Dialling or Flash facilities. 3.9 Ω BC547 Zbal 390 Ω Rast3 1 nF BZX79C18 100 pF CGAR CGARS Rast2 3.92 kΩ CIR 68 kΩ Rpd6 Rpd5 470 kΩ PD input Low voltage versatile telephone transmission circuits with dialler interface Rlimit BSN254 BZV85C10 4x BAS11 Rast1 130 kΩ andbook, full pagewidth b/a Telephone line a/b Rprot 10 Ω Philips Semiconductors Product specification TEA1112; TEA1112A APPLICATION INFORMATION Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A PACKAGE OUTLINES DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4 ME seating plane D A2 A A1 L c e Z w M b1 (e 1) b b2 MH 9 16 pin 1 index E 1 8 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 min. A2 max. b b1 b2 c D (1) E (1) e e1 L ME MH w Z (1) max. mm 4.2 0.51 3.2 1.73 1.30 0.53 0.38 1.25 0.85 0.36 0.23 19.50 18.55 6.48 6.20 2.54 7.62 3.60 3.05 8.25 7.80 10.0 8.3 0.254 0.76 inches 0.17 0.020 0.13 0.068 0.051 0.021 0.015 0.049 0.033 0.014 0.009 0.77 0.73 0.26 0.24 0.10 0.30 0.14 0.12 0.32 0.31 0.39 0.33 0.01 0.030 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-01-14 SOT38-4 1997 Mar 26 EUROPEAN PROJECTION 16 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A SO16: plastic small outline package; 16 leads; body width 3.9 mm SOT109-1 D E A X c y HE v M A Z 16 9 Q A2 A (A 3) A1 pin 1 index θ Lp 1 L 8 e 0 detail X w M bp 2.5 5 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) mm 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 10.0 9.8 4.0 3.8 1.27 6.2 5.8 1.05 1.0 0.4 0.7 0.6 0.25 0.25 0.1 0.7 0.3 0.069 0.010 0.057 0.004 0.049 0.01 0.019 0.0100 0.39 0.014 0.0075 0.38 0.16 0.15 0.050 0.039 0.016 0.028 0.020 0.01 0.01 0.004 0.028 0.012 inches 0.244 0.041 0.228 θ Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT109-1 076E07S MS-012AC 1997 Mar 26 EIAJ EUROPEAN PROJECTION ISSUE DATE 95-01-23 97-05-22 17 o 8 0o Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. WAVE SOLDERING This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Wave soldering techniques can be used for all SO packages if the following conditions are observed: • A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. DIP SOLDERING BY DIPPING OR BY WAVE • The longitudinal axis of the package footprint must be parallel to the solder flow. The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. • The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. REPAIRING SOLDERED JOINTS A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C. SO REFLOW SOLDERING Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. 1997 Mar 26 TEA1112; TEA1112A 18 Philips Semiconductors Product specification Low voltage versatile telephone transmission circuits with dialler interface TEA1112; TEA1112A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 417027/1200/03/pp20 Date of release: 1997 Mar 26 Document order number: 9397 750 01888