Single-Wire-Transceiver TLE 6258 Preliminary Data Sheet 1 Overview 1.1 Features • • • • • • • Single-wire transceiver, suitable for LIN protocol Compatible to LIN specification Compatible to ISO 9141 functions Transmission rate up to 20 kBaud Very low current consumption in stand-by mode Short circuit proof to ground and battery Overtemperature protection P-DSO-8-3 Type Ordering Code Package TLE 6258 G Q67006-A9469 P-DSO-8-3 Description The single-wire transceiver TLE 6258 is a monolithic integrated circuit in a P-DSO-8-3 package. It works as an interface between the protocol controller and the physical bus. The TLE 6258 is especially suitable to drive the bus line in LIN systems in automotive and industrial applications. Further it can be used in standard ISO9141 systems. In order to reduce the current consumption the TLE 6258 offers a stand-by mode. A wake-up caused by a message on the bus sets the RxD output low until the device is switched to normal operation mode. The IC is based on the Siemens Power Technology SPT® which allows bipolar and CMOS control circuitry in accordance with DMOS power devices existing on the same monolithic circuit. The TLE 6258 is designed to withstand the severe conditions of automotive applications. 1 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 1.2 Pin Configuration (top view) RxD 1 8 n.c. ENN 2 7 Vs Vcc 3 6 Bus TxD 4 5 GND P-DSO-8-3 Figure 1: Pinout 1.3 Pin Definitions and Functions Pin No. Symbol Function 1 RxD Receive data output; integrated pull up, LOW in dominant state, 2 ENN Enable not input; integrated 30 kΩ pull up, transceiver in normal operation mode when LOW 3 VCC 5V supply input; 4 TxD Transmit data input; integrated pull up, LOW in dominant state 5 GND Ground; 6 Bus Bus output/input; internal 30 kΩ pull up, LOW in dominant state 7 Vs Battery supply input; 8 n.c. not connected 2 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 1.4 Functional Block Diagram Vs 7 3 Vcc 2 ENN 4 TxD 1 RxD 5 GND 30 kΩ 30 kΩ Output Stage Driver Mode Control Bus 6 Temp.Protection Receiver TLE 6258 G Figure 2: Block Diagram 3 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 1.5 Application Information Start Up Power Up Normal Mode ENN low ENN Vcc ON ENN high low Stand-By 1) ENN high 1) VCC ON RxD becomes low when wake-up via bus Figure 3: State Diagram For fail safe reasons the TLE6258 has already a pull up resistor of 30kΩ implemented. To achieve the required timings for the dominant to recessive transition of the bus signal an additional external termination resistor of 1kΩ is required. It is recommended to place this resistor in the master node. To avoid reverse currents from the bus line into the battery supply line in case of an unpowered node, it is recommended to place a diode in series to the external pull up. For small systems (low bus capacitance) the EMC performance of the system is supported by an additional capacitor of at least 1nF in the master node (see figure 6, application circuit). In order to reduce the current consumption the TLE 6258 offers a stand-by mode. This mode is selected by switching the Enable Not (ENN) input high (see figure 3, state diagram). In the stand-by mode a wake-up caused by a message on the bus is indicated by setting the RxD output low. When entering the normal mode this wake-up flag is reset and the RxD output is released to transmit the bus data. 4 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 2 Electrical Characteristics 2.1 Absolute Maximum Ratings Parameter Symbol Limit Values Unit Remarks min. max. -0.3 6 V -0.3 40 V -20 32 V -20 40 V t<1s -0.3 VCC V 0 V < VCC < 5.5 V Voltages Supply voltage Battery supply voltage Bus input voltage Bus input voltage Logic voltages at EN, TxD, RxD VCC VS Vbus Vbus VI + 0.3 Electrostatic discharge voltage at Vs, Bus VESD -4 4 kV human body model (100 pF via 1.5 kΩ) Electrostatic discharge voltage VESD -2 2 kV human body model (100 pF via 1.5 kΩ) Tj -40 150 °C – Temperatures Junction temperature Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. 5 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 2.2 Operating Range Parameter Supply voltage Battery Supply Voltage Junction temperature Symbol VCC VS Tj Limit Values Unit Remarks min. max. 4.5 5.5 V 6 20 V – 40 150 °C – Thermal Shutdown (junction temperature) Thermal shutdown temp. Thermal shutdown hyst. TjSD ∆T 150 170 190 °C – 10 – K Rthj-a – 185 K/W Thermal Resistances Junction ambient 6 – version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 2.3 Electrical Characteristics 4.5 V < VCC < 5.5 V; 6.0 V < VS < 20 V; RL = 1 kΩ; VENN < VENN,ON; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Parameter Symbol Limit Values min. Unit Remark typ. max. Current Consumption Current consumption ICC 0.5 1.5 mA recessive state; VTxD = VCC Current consumption IS 0.5 1.0 mA recessive state; VTxD = VCC Current consumption ICC 0.7 2.0 mA dominant state; VTxD = 0 V Current consumption IS 0.7 1.5 mA dominant state; VTxD = 0 V Current consumption ICC 20 30 µA stand-by mode; Tj = 25 °C Current consumption IS 20 30 µA stand-by mode; Tj = 25 °C Current consumption ICC IS ISCC0 20 40 µA stand-by mode 20 40 µA stand-by mode 16 30 µA stand-by mode, VCC = 0 V, VS = 13.5 V IRD,H IRD,L -0.7 -0.4 mA VRD = 0.8 x VCC, Current consumption Current consumption Receiver Output R×D HIGH level output current LOW level output current 0.4 0.7 mA VRD = 0.2 x VCC, 0.44 x VS 0.48 x VS V -8 V < Vbus < Vbus,dom Bus receiver Receiver threshold voltage, recessive to dominant edge Vbus,rd Receiver threshold voltage, dominant to recessive edge Vbus,dr 0.52 x VS 0.56 x VS V Vbus,rec < Vbus < 20 V Receiver hysteresis Vbus,hys 0.02 x VS Vwake 0.40x VS 0.04 x VS 0.06 x VS mV Vbus,hys = Vbus,rec - Vbus,dom wake-up threshold voltage 7 0.55x 0.65x V VS VS version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 2.3 Electrical Characteristics (cont’d) 4.5 V < VCC < 5.5 V; 6.0 V < VS < 20 V; RL = 1 kΩ; VENN < VENN,ON; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Parameter Symbol Limit Values min. Unit Remark typ. max. 2.8 0.7 x Transmission Input T×D HIGH level input voltage threshold VTD,H TxD input hysteresis VTD,hys VTD,L LOW level input voltage threshold TxD pull up current V recessive state VCC 300 600 mV 0.3 x 2.2 V dominant state -80 µA VTxD < 0.3 Vcc VS V VTxD = VCC 1.5 V VTxD = 0 V; 125 mA Vbus,short = 13.5 V µA VCC = 0 V, VS = 0 V, Vbus = -8 V, Tj < 85 °C VCC = 0 V, VS = 0 V, Vbus = 20 V, Tj < 85 °C VCC ITD -150 -110 Bus transmitter Bus recessive output voltage Vbus,rec 0.9 x VS Bus dominant output voltage Vbus,dom 0 Bus short circuit current Leakage current Bus pull up resistance Ibus,sc Ibus,lk Rbus 40 85 -350 -260 20 5 20 µA 30 47 kΩ 2.8 0.7 x V low power mode V normal operation mode Enable not input (pin ENN) HIGH level input voltage threshold VENN,off LOW level input voltage threshold VENN,on ENN input hysteresis VENN,hys 300 600 ENN pull up resistance RENN 30 VCC 0.3 x 2.2 VCC 15 8 mV 60 kΩ version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 2.3 Electrical Characteristics (cont’d) 4.5 V < VCC < 5.5 V; 6.0 V < VS < 20 V; RL = 1 kΩ; VENN < VENN,ON; -40 °C < Tj < 125 °C; all voltages with respect to ground; positive current flowing into pin; unless otherwise specified. Parameter Symbol Limit Values Unit Remark min. typ. max. Dynamic Transceiver Characteristics falling edge slew rate Sbus(L) -3 -2.0 -1 V/µs 80% > Vbus > 20% Cbus= 3.3 nF; Tambient < 85 °C VCC = 5 V; VS = 13.5 V rising edge slew rate Sbus(H) 1 1.5 3 V/µs 20% < Vbus < 80% Cbus= 3.3 nF; VCC = 5 V; VS = 13.5 V Propagation delay td(L),TR TxD-to-RxD LOW (recessive to dominant) 2 4 6 µs Cbus = 3.3nF; VCC = 5V; VS = 13.5V CRxD = 20 pF Propagation delay td(H),TR TxD-to-RxD HIGH (dominant to recessive) 2 4 6 µs Cbus = 3.3 nF; VCC = 5 V; VS = 13.5V CRxD = 20 nF Propagation delay TxD LOW to bus td(L),T 1 4 µs VCC = 5 V Propagation delay TxD HIGH to bus td(H),T 1 4 µs VCC = 5 V Propagation delay bus dominant to RxD LOW td(L),R 0.5 2.0 µs VCC = 5V; CRxD = 20pF Propagation delay bus recessive to RxD HIGH td(H),R 0.5 2.0 µs VCC = 5 V; CRxD = 20 pF Receiver delay symmetry tsym,R tsym,T twake -2 2 µs tsym,R = td(L),R - td(H),R -2 2 µs tsym,T = td(L),T - td(H),T 150 µs Transmitter delay symmetry Wake-up delay time 30 9 70 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 3 Diagrams ENN Vs 100 nF 1kΩ TxD RxD Bus 20 pF Cbus GND VCC 100 nF Figure 4: Test circuits VCC VTxD GND td(L),T t td(H),T VS Vbus Vbus,rd Vbus,dr GND t td(H),R td(L),R VCC 0.7*VCC VRxD 0.3*VCC GND td(L),TR td(H),TR t Figure 5: Timing diagrams for dynamic characteristics 10 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 4 Application Vbat LIN bus master node TLE 6258 G Vs ENN RxD µP 100 nF TxD 1 kΩ Bus GND VCC GND 1nF 100 nF VI 100 nF 100 nF 5V VQ e.g. TLE 4278 22 µF GND 22 µF ECU 1 slave node TLE 6258 G Vs ENN 100 nF RxD µP TxD Bus GND VCC GND 100 nF VI 100 nF 22 µF VQ e.g. TLE 4278 100 nF 5V 22 µF GND ECU X Figure 6: Application Circuit 11 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 5 Package Outlines P-DSO-8-3 (Plastic Dual Small Outline Package) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. SMD = Surface Mounted Device Dimensions in mm 12 version: 2.02 date: 2001-08-08 Preliminary Data TLE 6258 Edition 1999-10-12 Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 München © Infineon Technologies AG1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 version: 2.02 date: 2001-08-08