AMS2319 DESCRIPTION AMS2319 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are required in a very small outline surface mount package. 0 0 0 0 0 0 0 0 3 D G S 1 2 2.Source 3.Drain 3 19YW 2 Y: Year Code 0 -40V/-3.5A, RDS(ON) = 75mΩ (Typ.) @VGS = -10V -40V/-2.8A, RDS(ON) = 105mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING SOT-23 1 0 FEATURE PIN CONFIGURATION SOT-23 1.Gate 0 W: Week Code 1 Advanced Monolithic Systems http://www.ams-semitech.com AMS2319 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V ID -3.5 -2.8 A IDM -20 A Continuous Source Current (Diode Conduction) IS -1.2 A TA=25℃ TA=70℃ PD 1.20 0.81 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 105 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature 2 Advanced Monolithic Systems http://www.ams-semitech.com ℃/W AMS2319 ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=-10uA -40 VGS(th) VDS=VGS,ID=-250uA -0.8 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -1.5 V VDS=0V,VGS=±20V ±100 nA VDS=-36V,VGS=0V -1 -5 Zero Gate Voltage Drain Current IDSS VDS=-36V,VGS=0V TJ=85℃ On-State Drain Current ID(on) VDS≦-5V,VGS=-4.5V Drain-source On-Resistance RDS(on) VGS=-10V,ID=-3.0A VGS=-4.5V,ID=-2.8A 0.075 0.105 Ω Forward Transconductance gfs VDS=-15V,ID=-3.0A 13 S Diode Forward Voltage VSD IS=-1.3A,VGS=0V -3.5 uA A -1.0 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time VDS=-15V VGS=-10V ID≡-3.0A VDS=-15V VGS=0V F=1MHz Crss VDD=-15V RL=15Ω ID=-1.0A VGEN=-10V RG=6Ω tr td(off) tf 3 Advanced Monolithic Systems http://www.ams-semitech.com 9 12 1.5 nC 2.0 500 95 pF 50 8 20 10 20 30 35 15 20 nS AMS2319 TYPICAL CHARACTERICTICS (25℃ Unless noted) 4 Advanced Monolithic Systems http://www.ams-semitech.com AMS2319 TYPICAL CHARACTERICTICS (25℃ Unless noted) TYPICAL CHARACTERICTICS (25℃ Unless noted) 5 Advanced Monolithic Systems http://www.ams-semitech.com AMS2319 TYPICAL CHARACTERICTICS (25℃ Unless noted) 6 Advanced Monolithic Systems http://www.ams-semitech.com AMS2319 SOT-23 PACKAGE OUTLINE 7 Advanced Monolithic Systems http://www.ams-semitech.com AMS2319 8 Advanced Monolithic Systems http://www.ams-semitech.com