APTLGT400A608G VCES = 600V IC = 400A @ Tc = 80°C Phase leg Intelligent Power Module Application • Motor control • Uninterruptible Power Supplies • Switched Mode Power Supplies • Amplifier Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA & SCSOA rated • Integrated Fail Safe IGBT Protection (Driver) - Top Bottom input signals Interlock - Isolated DC/DC Converter 0/VBUS INL INH GND GND VDD VDD VBUS OUT Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Very high noise immunity (common mode rejection > 25kV/µs) • Galvanic Isolation: 3750V for the optocoupler 2500V for the transformer • 5V logic level with Schmitt-trigger Input • Single VDD=5V supply required • Secondary auxiliary power supplies internally generated (15V, -6V) • Optocoupler qualified to AEC-Q100 test quidelines • RoHS compliant These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTLGT400A608G – Rev 0 February, 2011 • Low stray inductance • M5 power connectors • High level of integration APTLGT400A608G All ratings @ Tj = 25°C unless otherwise specified 1. Inverter Power Module Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage Pulsed Collector Current Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Max ratings 600 600 400 800 1250 Reverse Bias Safe Operating Area Tj = 150°C 800A@550V IC Continuous Collector Current ICM PD RBSOA Unit V A W Electrical Characteristics Symbol Characteristic Test Conditions ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V VCE(sat) Collector Emitter Saturation Voltage VDD = VIN = 5V IC = 400A Min Tj = 25°C Tj = 150°C Tj = 25°C Typ 1.5 1.7 Tj = 150°C Max 0.3 1 1.9 Unit mA V Dynamic Characteristics Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGE = 0V VCE = 25V f = 1MHz Tr Rise Time Tf Fall Time Tr Tf Eon Rise Time Fall Time Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive Switching (25°C) VDD = VIN = 5V VBus = 300V ; IC = 400A Inductive Switching (125°C) VDD = VIN = 5V VBus = 300V IC = 400A Isc Short Circuit data RthJC VDD = VIN = 5V; VBus =360V tp ≤ 6µs ; Tj = 150°C Junction to Case thermal resistance Min Typ 24 1.6 0.8 Max nF 45 ns 55 25 70 3.5 ns mJ 14 2000 A 0.12 www.microsemi.com Unit °C/W 2-6 APTLGT400A608G – Rev 0 February, 2011 Symbol Cies Coes Cres APTLGT400A608G Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 400A IF = 400A VR = 300V di/dt =4800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C 400 1.6 1.5 Tj = 25°C 125 Tj = 150°C Tj = 25°C 220 19 Tj = 150°C Tj = 25°C Tj = 150°C 40 4.4 9.6 Max 350 500 Junction to Case thermal resistance Unit V µA A 2 V ns µC mJ 0.20 °C/W 2. Driver Absolute maximum ratings Symbol VDD VINi IVDDmax fmax Parameter Max ratings 5.5 5.5 0.35 2 45 Supply Voltage Input signal voltage i=L, H VINi = 0V, i =L & H VDD=5V, VINH = /VINL ; Fout = 45kHz Maximum Switching Frequency Maximum Supply current Unit V A kHz Driver Electrical Characteristics PDD VISOL Characteristic Operating Supply Voltage Maximum Input Voltage Positive Going Threshold Voltage Negative Going Threshold Voltage Input Resistance * Turn On delay time Built in dead time Turn Off delay time Pulse Width Distortion Propagation Delay Difference between any two driver Primary to Secondary Isolation Test Conditions Min 4.5 -0.5 i = L, H Driver + IGBT Driver + IGBT Typ 5 5 3.2 1 1 1100n 600 750 Max 5.5 5.5 Unit V V kΩ ns 300 Td(on) - Td(off) -350 2500 350 ns VRMS * Low impedance guarantees good noise immunity. www.microsemi.com 3-6 APTLGT400A608G – Rev 0 February, 2011 Symbol VDD VINi(max) VINi (th+) VINi(th-) RINi Td(on) DT Td(off) PWD APTLGT400A608G 3. Package characteristics Symbol VISOL TJ TOP TSTG TC Characteristic Torque Mounting torque Wt Package Weight RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Operating Ambient Temperature Storage Temperature Range Operating Case Temperature To heatsink For terminals M5 M5 Min 2500 -40 -40 -40 -40 2 2 Typ Max 150 85 100 100 4.7 4 550 Unit V °C N.m g www.microsemi.com 4-6 APTLGT400A608G – Rev 0 February, 2011 Ra 3,2 4. LP8 Package outline (dimensions in mm) APTLGT400A608G Typical IGBT Performance Curve Output Characteristics (VGE=15V) Reverse Bias Safe Operating Area 800 1000 TJ=25°C 700 800 TJ=150°C 500 IC (A) IC (A) 600 400 600 400 300 VDD = 5V VIN = 5V 200 TJ=150°C 200 100 TJ=25°C 0 0 0 0.5 1 1.5 VCE (V) 2 2.5 3 0 Operating Frequency vs Collector Current Energy losses vs Collector Current E (mJ) 18 Fmax, Operating Frequency (kHz) 24 VCE = 300V VDD = 5V VIN = 5V TJ = 150°C Eoff 12 Eon 6 0 0 100 200 300 400 500 600 700 VCE (V) 100 200 300 400 500 600 700 800 50 VCE = 300V D = 50% VDD = 5V VIN = 5V TJ = 150°C TC =85°C 40 30 Limited by internal gate drive power dissipation 20 Hard switching 10 0 0 100 IC (A) 200 300 IC (A) 400 500 0.12 D = 0.9 0.7 0.08 0.5 0.04 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTLGT400A608G – Rev 0 February, 2011 Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration APTLGT400A608G Typical diode Performance Curve Forward Characteristic of diode Energy losses vs Collector Current 800 16 VR = 300V TJ = 150°C 700 12 600 Err (mJ) IF (A) 500 400 300 TJ=150°C 200 4 100 TJ=25°C 0 0 0 0.4 8 0.8 1.2 1.6 VF (V) 2 0 2.4 200 400 600 800 IF (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.24 0.2 0.16 D = 0.9 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 6-6 APTLGT400A608G – Rev 0 February, 2011 Rectangular Pulse Duration in Seconds