BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz TSFP-4 Outstanding noise figure F = 1.2 dB at 6 GHz to p v ie w • High maximum stable gain Gms = 23 dB at 1.8 GHz 3 4 A C s • Gold metallization for extra high reliability 1 • 70 GHz fT-Silicon Germanium technology 2 d ir e c tio n o f u n r e e lin g *Short-term description ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP640F Marking R4s 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA > 0°C 4 TA ≤ 0°C 3.7 Collector-emitter voltage VCES 13 Collector-base voltage VCBO 13 Emitter-base voltage VEBO 1.2 Collector current IC 50 Base current IB 3 Total power dissipation1) Ptot 200 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature T stg -65 ... 150 mA TS ≤ 92°C 1T is measured on the collector lead at the soldering point to the pcb S 1 Mar-11-2004 BFP640F Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 290 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 4 4.5 - V ICES - - 30 µA ICBO - - 100 nA IEBO - - 3 µA hFE 110 180 270 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 30 mA, VCE = 3 V, puls measured 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Mar-11-2004 BFP640F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT 30 40 - Ccb - 0.09 0.2 Cce - 0.18 - Ceb - 0.5 - GHz IC = 30 mA, VCE = 3 V, f = 1 GHz Collector-base capacitance pF VCB = 3 V, f = 1 MHz Collector emitter capacitance VCE = 3 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 5 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt - 0.65 - IC = 5 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt - 1.2 - G ms - 23 - dB G ma - 12 - dB Power gain, maximum stable1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 30 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt, f = 6 GHz |S21e|2 Transducer gain IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz dB - 20.5 - - 10 - IP 3 - 27.5 - P-1dB - 13.5 - IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 6 GHz Third order intercept point at output2) dBm VCE = 3 V, I C = 30 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB Compression point at output IC = 30 mA, VCE = 3 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G 1/2 ma = |S21e / S12e| (k-(k²-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 Mar-11-2004 BFP640F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF = TITF1 0.22 1000 2 2 1.8 2.707 227.6 1.8 0.4 0.6 0.2 0.27 3 fA V V Ω fF ps A V ns - 2 -0.0065 - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF = TITF2 450 0.15 55 3.8 3.129 0.6 0.8 10 0 0.5 93.4 -1.42 0.8 7.291E-11 1.0E-5 A mA Ω V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 1.025 21 1 400 1.522 3.061 0.3 1.5 67.43 1 0.6 1.078 298 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. 0.22 LBO = 0.28 LEO = 0.22 LCO = LBI = 0.42 LEI = 0.26 LCI = 0.35 34 CBE = 2 CBC = 33 CCE = KBO-EO =0.1 KBO-CO =0.01 KEO-CO =0.11 KCI-EI = 0.2 Package Equivalent Circuit: KBI-CI = KBI-EI = RLBI = RLEI = RLCI = For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes -0.08 -0.05 0.15 0.11 0.13 nH nH nH nH nH nH fF fF fF Ω Ω Ω Valid up to 6GHz 4 Mar-11-2004 BFP640F Collector-base capacitance Ccb= ƒ(VCB) Third order Intercept Point IP3=ƒ(IC) f = 1MHz (Output, ZS=ZL=50Ω) VCE = parameter, f = 1.8 GHz 0.25 30 dBm 4V pF 24 IP3 CCB 21 0.15 3V 18 15 0.1 12 2V 9 1V 0.05 6 3 0 0 2 4 6 8 10 V 0 0 14 10 20 30 40 mA VCB 60 IC Transition frequency fT= ƒ(IC) Power gain Gma, Gms = ƒ(IC) f = 1GHz VCE = 3V VCE = parameter f = parameter 45 30 0.9 dB GHz 3V 26 35 24 30 G fT 2V 1.8 22 25 20 20 18 2.4 3 16 15 4 14 5 10 12 1V 5 10 0.5V 0 0 10 20 30 40 mA 6 8 0 60 IC 10 20 30 40 mA 60 IC 5 Mar-11-2004 BFP640F Power Gain Gma, Gms = ƒ(f), Power gain Gma, Gms = ƒ (VCE) |S21|² = f (f) IC = 30mA VCE = 3V, IC = 30mA f = parameter 55 dB 45 G G 35 30 Gms 25 24 1.8 20 2.4 18 3 16 4 14 5 6 12 10 |S21|² 8 Gma 15 6 4 10 5 0 0.9 22 40 20 30 dB 2 1 2 3 4 GHz 0 0 6 f 0.5 1 1.5 2 2.5 3 3.5 V 4.5 VCE 6 Mar-11-2004