INFINEON BFP93A

BFP 93A
NPN Silicon RF Transistor
• For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
5 mA to 30 mA
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 93A
SOT-143
FEs
Q62702-F1144
1=C
2=E
3=B
4=E
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
50
Base current
IB
6
Total power dissipation
Ptot
TS ≤ 78 °C
Values
Unit
V
mA
mW
300
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 240
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-16-1996
BFP 93A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
12
100
nA
-
-
100
IEBO
µA
-
-
10
hFE
IC = 30 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 2 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 20 V, VBE = 0
Collector-base cutoff current
V
50
2
100
200
Dec-16-1996
BFP 93A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
4.5
pF
-
0.5
0.8
-
0.33
-
-
1.7
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
6
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 5 mA, VCE = 8 V, ZS = ZSopt
f = 900 MHz
-
2
-
f = 1.8 GHz
-
3.3
-
f = 900 MHz
-
18
-
f = 1.8 GHz
-
12
-
f = 900 MHz
-
14.5
-
f = 1.8 GHz
-
8.5
-
Power gain
2)
Gma
IC = 30 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-16-1996
BFP 93A
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
8.6752
fA
BF =
137.63
-
NF =
0.93633
-
VAF =
20.011
V
IKF =
0.33395
A
ISE =
2619.3
fA
NE =
1.5466
-
BR =
59
-
NR =
0.88761
-
VAR =
26.834
V
IKR =
0.015129 A
ISC =
0.70823
fA
NC =
1.95
-
RB =
7.2326
Ω
IRB =
0.043806 mA
RBM =
3.4649
Ω
RE =
1.0075
Ω
RC =
0.13193
Ω
CJE =
3.1538
fF
VJE =
0.70393
V
MJE =
0.5071
-
TF =
33.388
ps
XTF =
0.28319
-
VTF =
0.17765
V
ITF =
2.5184
mA
PTF =
0
deg
CJC =
1039.5
fF
VJC =
0.72744
V
MJC =
0.34565
-
XCJC =
0.21422
-
TR =
1.1061
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.75935
-
TNOM
300
K
LBI =
0.89
nH
LBO =
0.73
nH
LEI =
0.4
nH
LEO =
0.5
nH
LCI =
0
nH
LCO =
0.42
nH
CBE =
189
fF
CCB =
15
fF
CCE =
187
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-16-1996
BFP 93A
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
400
mW
Ptot
300
250
TS
200
150
TA
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 2
10 3
K/W
RthJS
Ptotmax/P totDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
TS
0
5
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Dec-16-1996
BFP 93A
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
7
1.6
pF
GHz
Ccb
10V
fT
3V
1.2
2V
5
1.0
4
0.8
1V
3
0.6
0.7V
2
0.4
1
0.2
0.0
0
0
4
8
12
16
V
VR
22
0
10
20
30
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
20
40
mA
IC
60
14
dB
dB
10V
G
16
10V
5V
3V
G
3V
3V
10
2V
2V
14
8
12
6
1V
1V
10
4
8
2
0.7V
6
0
10
Semiconductor Group
20
30
40
mA
IC
0.7V
0
60
0
6
10
20
30
40
mA
IC
60
Dec-16-1996
BFP 93A
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
20
32
IC=30mA
8V
dB
G
0.9GHz
16
dBm
5V
24
3V
IP3
0.9GHz
14
12
2V
20
1.8GHz
10
16
1V
1.8GHz
8
12
6
8
4
4
2
0
0
0
2
4
6
8
V
12
0
10
20
30
40
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
35
mA
IC
60
32
IC=30mA
IC=30mA
dB
dB
G
S21
24
25
20
20
16
12
15
8
10
10V
2V
1V
0.7V
5
0
0.0
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
10V
2V
1V
0.7V
4
0
-4
0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Dec-16-1996