MMBT58 9 TRANSISTOR(PNP) SOT-23 FEATURES High current surface mount PNP silicon switching transistor for z Load management in portable applications 1. BASE 2. EMITTER MARKING :589 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 310 mW RθJA Thermal Resistance, junction to Ambient 403 ℃/W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-30V,IE=0 -0.1 μA Collector-emitter cut-off current ICES VCES=-30V -0.1 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.1 μA hFE1 VCE=-2V,IC=-1mA 100 hFE2 VCE=-2V,IC=-500mA 100 hFE3 VCE=-2V,IC=-1A 80 hFE4 VCE=-2V,IC=-2A 40 DC current gain 300 VCE(sat)1 IC= -500mA, IB=-50mA -0.25 V VCE(sat)2 IC= -1A, IB=-100mA -0.3 V VCE(sat)3 IC= -2A, IB=-200mA -0.65 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB=-100mA -1.2 V Base-emitter Turn-on voltage VBE(on) VCE=-2V, IC=-1A -1.1 V Collector-emitter saturation voltage Transition frequency Collector Output Capacitance fT Cob VCE=-5V, IC=-100mA , f =100MHz f=1MHz 100 MHz 15 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF MMBT58 9 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５