SMD Type IC SMD Type MOSFET

MOSFET
IC
SMD Type
N-Channel Enhancement Mode
Field Effect Transistor
AO3400 (KO3400)
SOT-23
Features
VDS (V) = 30V
RDS(ON)
33m
(VGS = 4.5V)
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
(VGS = 2.5V)
+0.05
0.1 -0.01
0-0.1
+0.1
0.38 -0.1
+0.1
0.97 -0.1
52m
1
0.55
(VGS = 10V)
+0.1
1.3 -0.1
28m
+0.1
2.4 -0.1
RDS(ON)
0.4
3
ID = 5.8 A (VGS = 10V)
RDS(ON)
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain-Source Voltage
Parameter
VDS
30
V
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25
TA=70
P u l s e d D r a i n Cu r r e n t *
Power Dissipation
ID
IDM
TA=25
TA=70
PD
12
V
5.8
4.9
A
30
1.4
1
W
Thermal Resistance.Junction- to-Ambient
RthJA
125
/W
Thermal Resistance.Junction- to-Case
Rthc
60
/W
TJ, TSTG
-55 to 150
Junction and Storage Temperature Range
* Repetitive rating, pulse width limited by junction temperature.
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1
IC
MOSFET
SMD Type
AO3400
(KO3400)
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Testconditions
ID=250
Min
On state drain current
ID(ON)
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge
Qg
V
VDS=24V, VGS=0V
1
VDS=24V, VGS=0V ,TJ=55
5
VDS=0V, VGS=
12V
100
A
nA
1.1
1.4
22.8
28
32
39
VGS=4.5V, ID=5A
27.3
33
m
VGS=2.5V, ID=4A
43.3
52
m
VDS=VGS ID=250
0.7
Unit
A
VGS=10V, ID=5.8A
TJ=125
VGS=4.5V, VDS=5V
30
VDS=5V, ID=5A
10
m
A
15
823
S
1050
VGS=0V, VDS=15V, f=1MHz
99
VGS=0V, VDS=0V, f=1MHz
1.4
3.6
9.7
12
pF
pF
77
VGS=4.5V, VDS=15V, ID=5.8A
V
pF
nC
Gate Source Charge
Qgs
1.6
nC
Gate Drain Charge
Qgd
3.1
nC
Turn-On DelayTime
tD(on)
3.3
Turn-On Rise Time
tr
Turn-Off DelayTime
tD(off)
Turn-Off Fall Time
VGS=10V, VDS=15V, RL=2.7
tf
,RGEN=3
5
ns
4.8
7
ns
26.3
40
ns
4.1
6
ns
Body Diode Reverse Recovery Time
trr
IF=5A, dI/dt=100A/
s
16
20
ns
Body Diode Reverse Recovery Charge
Qrr
IF=5A, dI/dt=100A/
s
8.9
12
nC
Maximum Body-Diode Continuous Current
IS
2.5
A
1
V
Diode Forward Voltage
VSD
Marking
Marking
2
RDS(ON)
Max
30
A, VGS=0V
VGS=10V, ID=5.8A
Static Drain-Source On-Resistance
Typ
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A0*
IS=1A,VGS=0V
0.71
MOSFET
SMD Type
AO3400
(KO3400)
■ Typical Characterisitics
25
20
10V
3V
VDS=5V
16
4.5V
2.5V
15
12
ID(A)
ID (A)
20
8
10
VGS=2V
5
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
0
60
0.5
1
1.5
2
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
1.8
50
VGS=2.5V
40
30
VGS=4.5V
20
VGS=10V
1.6
VGS=4.5V
1.4
VGS=10V
1.2
VGS=2.5V
1
10
0.8
0
5
10
15
0
20
70
1.0E+01
60
1.0E+00
ID=5A
50
1.0E-01
IS (A)
125°C
40
30
50
75
100
125
150
175
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
25°C
20
25
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
25°C
4
0
RDS(ON) (mΩ)
125°C
1.0E-05
1.0E-06
10
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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3
MOSFET
SMD Type
AO3400
(KO3400)
■ Typical Characterisitics
5
1200
Capacitance (pF)
4
VGS (Volts)
1400
VDS=15V
ID=5A
3
2
1
1000
Ciss
800
600
400
Coss
200
0
0
2
4
6
8
10
0
12
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
1.0
10ms
10s
DC
1
10
100
VDS (Volts)
ZθJA Normalized Transient
Thermal Resistance
30
20
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
.
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01
0.00001
Ton
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
25
TJ(Max)=150°C
TA=25°C
0
0.001
0.1
10
20
10
1s
0.1
15
30
100µs
0.1s
10
40
TJ(Max)=150°C
TA=25°C
RDS(ON)
10.0 limited
5
VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
ID (Amps)
100.0
Crss
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100
1000