Transistors SMD Type NPN Transistors BC817A (KC817A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features High current gain. 1 0.55 High collector current. +0.1 1.3 -0.1 +0.1 2.4 -0.1 For general AF applications. 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 Low collector-emitter saturation voltage. +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● Complementary PNP type available(BC807A) 1.Base 0-0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base v oltage VCBO 50 V Collector-emitter v oltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA mW power dissipation PD 310 Junction temperature Tj 150 Storage temperature Tstg -65 to +150 +0.1 0.38 -0.1 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Test conditions Min Collector to base breakdown voltage V CBO IC = 10 A, IE = 0 50 Collector to emitter breakdown voltage Typ Max Unit V V CEO IC = 10 mA, IB = 0 45 V Emitter to base breakdown voltage VEBO IE = 10 5 V Collector cutoff current ICBO Emitter cutoff current IEBO A, IC = 0 VCB = 25 V, IE = 0 100 nA VCB = 25 V, IE = 0 , TA = 150 50 A 100 nA VEB = 4 V, IC = 0 BC817A-16 DC current gain * BC817A-25 hFE IC = 100 mA, VCE = -1 V BC817A-40 100 160 250 160 250 400 250 350 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 V Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V Collector-base capacitance CCb VCB = 10 V, f = 1 MHz 6 pF Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 pF IC = 50 mA, VCE = 5 V, f = 100 MHz 170 MHz Transition frequency * Pulsed: PW fT 350 us, duty cycle 2% ■ Classification of hfe Type BC817A-16 BC817A-25 BC817A-40 Range 100-250 160-400 250-630 Marking 6A 6B 6C www.kexin.com.cn 1