STU/D802S Green Product S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY V DSS Super high dense cell design for low R DS(ON). R DS(ON) (m Ω) Max ID Rugged and reliable. 35 @ VGS=10V 80V TO-252 and TO-251 Package. 25A 50 @ VGS=4.5V D D G D G S STU SERIES TO-252AA(D-PAK) S G STD SERIES TO-251(l-PAK) S ABSOLUTE Symbol VDS VGS ID IDM MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Parameter Limit Drain-Source Voltage 80 Gate-Source Voltage ±20 a Drain Current-Continuous TA=25 °C 25 -Pulsed b EAS Avalanche Energy c PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a TA=25 °C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Units V V A 100 A 196 mJ 62.5 W -55 to 150 °C 2 50 °C/W °C/W Mar,31,2010 1 www.samhop.com.tw STU/D802S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold Voltage Conditions Min VGS=0V , ID=250uA 80 Drain-Source On-State Resistance gFS Forward Transconductance Max Units V 1 ±100 VDS=64V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=250uA RDS(ON) Typ 3 1 A nA VGS=10V , ID=16A 25 35 V m ohm VGS=4.5V , ID=14A 32 50 m ohm VDS=10V , ID=16A 38 S VDS=25V,VGS=0V f=1.0MHz 3270 210 145 pF pF pF VDS=64V,ID=16A,VGS=10V 66 166 222 55 50 VDS=64V,ID=16A, VGS=10V 6 16 ns ns ns ns nC nC nC b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On DelayTime tr Rise Time tD(OFF) Turn-Off DelayTime tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDD=40V ID=16A VGS=10V RGEN=60 ohm DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage VSD VGS=0V,IS=16A 0.9 16 1.3 A V Notes _ 2%. _ 300us, Duty Ctcle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13) Mar,31,2010 2 www.samhop.com.tw STU/D802S Ver 1.0 55 60 VG S = 4.5V 44 I D , Drain C urrent (A) ID , Drain C urrent(A) VG S = 5V VG S = 10V 33 VG S = 4V 22 VG S = 3.5V 11 2.0 1.5 1.0 0.5 2.5 36 T j=125 C 24 0 0.0 3.0 Figure 1. Output Characteristics 2.4 4.0 3.2 4.8 R DS (ON) , On-R es is tance Normalized 2.0 75 R DS (on) (m Ω ) 1.6 Figure 2. Transfer Characteristics 90 60 45 V G S =4.5V 30 V G S =10V 15 1 11 22 33 44 V G S =10V I D =16A 1.8 1.6 1.4 1.2 V G S =4.5V I D =14A 1.0 0.0 55 0 75 50 25 100 125 150 T j( C ) ID, Drain Current (A) Tj, Junction Temperature ( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 0.8 VGS, Gate-to-Source Voltage(V) VDS, Drain-to-Source Voltage(V) 1 -55 C 25 C 12 0 0 48 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C ) Tj, Junction Temperature ( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Mar,31,2010 3 www.samhop.com.tw STU/D802S Ver 1.0 60 60 I D =16A 40 125 C 30 75 C Is , S ource-drain current (A) R DS (on) (m Ω ) 50 25 C 20 10 0 0 2 4 6 8 125 C 10 75 C 1 10 0 VGS, Gate-Source Voltage (V) 0.25 0.50 0.75 1.00 1.25 VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 3600 V G S , G ate to S ource V oltage (V ) C is s 3000 C , C apacitance (pF ) 25 C 2400 1800 1200 600 C os s C rs s 0 0 V DS =64V I D =16A 8 6 4 2 0 5 10 15 20 25 30 0 8 16 32 24 40 48 56 VDS, Drain-to Source Voltage (V) Qg, Total Gate Charge (nC) Figure 9. Capacitance Figure 10. Gate Charge 600 64 700 TD(off) 100 60 I D , Drain C urrent (A) S witching T ime (ns ) Tr TD(on) Tf 10 V DS =40V ,ID=16A 1 6 10 R 60 100 300 600 0.1 Rg, Gate Resistance (Ω) DS ( ) ON L im it 10 1 V G S =10V 1 100 10 1m 10 m DC s 0u s s V G S =10V S ingle P ulse T c=25 C 1 10 100 VDS, Gate-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11. Switching Characteristics Mar,31,2010 4 www.samhop.com.tw STU/D802S Ver 1.0 V ( BR )D S S tp L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Mar,31,2010 5 www.samhop.com.tw STU/D802S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Mar,31,2010 6 www.samhop.com.tw STU/D802S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Mar,31,2010 7 www.samhop.com.tw STU/D802S Ver 1.0 TO251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M N W T H K S ӿ 330 ӿ330 ² 0.5 ӿ97 ² 1.0 17.0 + 1.5 - 0 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Mar,31,2010 8 www.samhop.com.tw