MTNN20N03Q8

CYStech Electronics Corp.
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 1/9
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTNN20N03Q8
BVDSS
ID
RDSON(MAX)
N-CH 1
30V
8A
20mΩ
N-CH 2
60V
0.115A
5Ω
Description
The MTNN20N03Q8 provides the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Two N-ch MOSFETs in a package
• Pb-free lead plating package
Equivalent Circuit
MTNN20N03Q8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTNN20N03Q8
CYStek Product Specification
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
N-CH 1
N-CH 2
Unit
Drain-Source Voltage
VDS
30
60
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current @ TC=25 °C (Note 1)
ID
8
0.115
A
Continuous Drain Current @ TC=100 °C (Note 1)
ID
6
0.08
A
Pulsed Drain Current (Note 2&3)
IDM
32
0.7
A
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
Pd
2
0.4
W
0.016
0.016
W / °C
1250
V
ESD susceptibility
(Note 4)
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Tj
-55~+150
°C
Tstg
-55~+150
°C
Rth,ja
62.5
°C/W
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
3. Pulse width≤300μs, duty cycle≤2%.
4. Human body model, 1.5kΩ in series with 100pF
Characteristics (Tj=25°C, unless otherwise specified)
N-Channel MOSFET 1
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
MTNN20N03Q8
Min.
Typ.
Max.
Unit
Test Conditions
30
1.0
-
1.5
16
15.5
23
3.0
±100
1
25
20
31
V
V
S
nA
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=8A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =10V, ID=8A
VGS =5V, ID=6A
-
11
6
1.2
3.3
11
16
36
20
1115
116
82
2
-
μA
mΩ
nC
ID=8A, VDS=15V, VGS=10V
ns
VDS=15V, ID=1A,VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
CYStek Product Specification
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 3/9
CYStech Electronics Corp.
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
50
2
2.3
9.2
1.2
-
A
V
ns
nC
IF=IS, VGS=0V
IF=IS, VGS=0, dI/dt=100A/μs
N-Channel MOSFET 2
Symbol
BVDSS*
VGS(th)
IGSS
IDSS
Min.
60
1
100
-
RDS(ON)*
GFS
Ciss
Coss
Crss
Typ.
3.6
3
30.5
9.3
5.9
Max.
2.5
±10
1
5.5
5
-
Unit
V
V
μA
μA
mS
Test Conditions
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
ID=100mA, VGS=5V
ID=100mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0, f=1MHz
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
MTNN20N03Q8
SOP-8
(Pb-free lead plating package)
3000 pcs / Tape & Reel
Typical Characteristics
N-CH MOSFET 1
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
30
V = 10V 6V
7V
2.4
GS
25
2.2
5V
VGS = 3.5 V
20
RDS(ON) -Normalized
Drain-Source On-Resistance
ID - Drain Current(A)
2.0
4.5V
15
4V
10
5
0
3.5V
4.0 V
1.8
1.6
4.5 V
5.0 V
1.4
6.0 V
1.2
7.0 V
1.0
10 V
0.8
0
MTNN20N03Q8
1
2
3
VDS - Drain Source Voltage(V)
4
5
0
6
12
18
ID - Drain Current(A)
24
30
CYStek Product Specification
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 4/9
CYStech Electronics Corp.
On-Resistance Variation with Temperature
1.9
I D = 8A
VGS = 10V
ID = 8 A
0.08
RDS(ON) - On-Resistance( Ω )
1.6
RDS(on) - Normalized
Drain-Source On-Resistance
On-Resistance Variation with Gate-to-Source Voltage
0.09
1.3
1.0
0.7
0.07
0.06
0.05
0.04
TA = 125°C
0.03
TA = 25°C
0.02
0.4
-50
-25
75
0
25
50
TJ - Junction Temperature (° C)
100
125
150
0.01
Transfer Characteristics
30
VDS = 10V
Is - Reverse Drain Current( A )
ID - Drain Current(A)
25° C
15
125°C
10
5
0
3.0
3.5
25° C
1
-55° C
0.1
0.01
0.001
0.2
0.6
0.8
1.0
0.4
VSD - Body Diode Forward Voltage( V )
0
VDS = 5V
8
1200
15V
1.4
f = 1MHz
VGS = 0 V
1350
10V
1.2
Capacitance Characteristics
1500
ID = 8A
Ciss
1050
Capacitance(pF)
VGS - Gate-Source Voltage( V )
1.5
2.5
2.0
VGS - Gate-Source Voltage( V )
TA = 125°C
10
Gate Charge Characteristics
10
10
VGS = 0V
TA = -55° C
1
8
6
VGS- Gate-Source Voltage( V )
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
25
20
4
2
6
4
900
750
600
450
300
2
Coss
Crss
150
0
0
0
MTNN20N03Q8
4
8
Q g - Gate Charge( nC )
12
16
0
5
15
10
VDS - Drain-Source Voltage( V )
20
25
30
CYStek Product Specification
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 5/9
CYStech Electronics Corp.
Maximum Safe Operating Area
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
RθJA= 125° C/ W
TA = 25°C
RDS(ON) Limit
ID - Drain Current( A )
P( pk ),Peak Transient Power( W )
100μs
10
1ms
10ms
100ms
1
1s
10s
DC
VGS= 10V
Single Pulse
RθJA= 125°C/ W
TA = 25°C
0.1
0.01
0.1
1
10
VDS - Drain-Source Voltage( V )
40
30
20
10
0
0.001
100
0.01
0.1
1
10
100
1000
N-CH MOSFET 2
Typical Output Characteristics
Typical Transfer Characteristics
0.3
0.3
4V
6V
0.2
0.15
VDS=10V
0.25
3.5V
Drain Current -ID(A)
Drain Current - ID(A)
0.25
3V
0.1
0.2
0.15
0.1
0.05
0.05
VGS=2.2V
0
0
0
1
2
3
Drain-Source Voltage -VDS(V)
0
4
1
2
3
Gate-Source Voltage-VGS(V)
4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
10
10
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
VGS=5V
VGS=10V
1
1
0.01
MTNN20N03Q8
0.1
Drain Current-ID(A)
1
0.01
0.1
1
Drain Current-ID(A)
CYStek Product Specification
CYStech Electronics Corp.
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Reverse Drain Current vs Source-Drain Voltage
7
10
Source-Drain Voltage-VSD(V)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 6/9
6
5
4
ID=100mA
3
ID=50mA
2
1
1
0.1
0.01
0.001
0
0
5
10
15
20
Gate-Source Voltage-VGS(V)
25
0
0.2
0.4
0.6
0.8
Reverse Drain Current -IDR(A)
1
Capacitance vs Drain-to-Source Voltage
100
Capacitance---(pF)
Ciss
C oss
10
Crss
1
0.1
MTNN20N03Q8
1
10
Drain-Source Voltage -VDS(V)
100
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTNN20N03Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTNN20N03Q8
CYStek Product Specification
Spec. No. : C805Q8
Issued Date : 2009.12.30
Revised Date :2011.03.21
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
20N03
Date Code
□□□□
H
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1890
0.2007
0.1496
0.1654
0.2283
0.2441
0.0480
0.0519
0.0138
0.0193
0.1472
0.1527
0.0531
0.0689
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.80
5.10
3.80
4.20
5.80
6.20
1.22
1.32
0.35
0.49
3.74
3.88
1.35
1.75
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0098 REF
0.0118
0.0354
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.25 REF
0.30
0.90
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTNN20N03Q8
CYStek Product Specification