MTC5806AQ8

CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 1/12
N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTC5806AQ8
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)4.5V
N-CH
60V
4.5A
37mΩ
42mΩ
P-CH
-60V
-3.5A
70mΩ
93mΩ
Description
The MTC5806AQ8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Equivalent Circuit
MTC5806AQ8
Outline
SOP-8
G：Gate
S：Source
D：Drain
MTC5806AQ8
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 2/12
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 1)
Symbol
BVDSS
VGS
ID
ID
IDM
(Note 2)
(Note 2)
Power Dissipation for Dual Operation
Limits
Unit
N-channel
P-channel
60
±20
4.5
3.6
20
-60
±20
-3.5
-2.8
-20
V
V
A
A
A
1.6 (Note 2)
W
2
PD
Power Dissipation for Single Operation
0.9 (Note 3)
Operating Junction and Storage Temperature Range
Tj; Tstg
°C
-55~+150
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
Value
40
78 (Note 2)
135 (Note 3)
Unit
°C/W
°C/W
°C/W
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3.Surface mounted on minimum copper pad, pulse width≤10s.
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTC5806AQ8
Min.
Typ.
Max.
Unit
60
1.0
-
1.7
37
42
6
2.5
±100
1
10
58
60
-
V
V
nA
-
1173
45
35
8
12
30
7
20
18
35
15
Test Conditions
S
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=48V, VGS=0
VDS=40V, VGS=0, Tj=55°C
VGS=10V, ID=4.5A
VGS=4.5V, ID=4A
VDS=10V, ID=4.5A
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=30V, ID=1A, VGS=10V, RG=6Ω
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
*ISM
-
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 3/12
14
3.9
4.7
16
-
nC
VDS=30V, ID=4.5A, VGS=10V
0.75
-
1.0
1.3
2.6
V
A
A
VGS=0V, IS=1.3A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
Min.
Typ.
Max.
Unit
-60
-1.0
-
-1.8
70
93
5
-2.5
±100
-1
-10
90
125
-
V
V
nA
940
49
35
6
8
26
11
10
3
3.1
13
18
31
20
15
-
-0.75
-
-1.0
-1.3
-2.6
*GFS
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*VSD
*IS
*ISM
-
Test Conditions
S
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-48V, VGS=0
VDS=-40V, VGS=0, Tj=55°C
VGS=-10V, ID=-3.5A
VGS=-4.5V, ID=-3A
VDS=-10V, ID=-3.5A
pF
VDS=-30V, VGS=0, f=1MHz
μA
mΩ
ns
ns
VDS=-30V, ID=-1A, VGS=-10V, RG=6Ω
nC
VDS=-30V, ID=-3.5A, VGS=-10V
V
VGS=0V, IS=-1.3A
A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTC5806AQ8
MTC5806AQ8
Package
Shipping
SOP-8
2500 pcs / Tape & Reel
(Pb-free lead plating & halogen-free package)
Marking
5806SS
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 4/12
CYStech Electronics Corp.
Typical Characteristics : Q1( N-channel )
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
20
ID, Drain Current(A)
10V, 9V, 8V, 7V, 6V, 5V, 4V
15
10
VGS=3V
5
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
1
2
3
4
VDS , Drain-Source Voltage(V)
-60
5
Static Drain-Source On-State resistance vs Drain Current
180
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1000
VGS=2.5V
VGS=3V
100
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.01
0.1
1
10
ID, Drain Current(A)
100
0
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON), Normalized Static DrainSource On-State Resistance
100
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-20
90
80
ID=4.5A
70
60
50
40
30
20
10
1.8
VGS=10V, ID=4.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 36mΩ typ.
0.6
0.4
0
0
MTC5806AQ8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20
0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 5/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
C oss
100
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=48V
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
8
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Gate Charge Characteristics
10
VDS=30V
VDS=12V
6
4
2
ID=4.5A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
2
4
6
8
10
12
Qg, Total Gate Charge(nC)
14
16
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
6
RDS(ON)
Limite
10
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
100μs
1ms
1
10ms
100m
1s
0.1
TA=25°C, Tj=150°C, VGS=10V
RθJA=78°C/W,Single Pulse
DC
5
4
3
2
TA=25°C, VGS=10V
RθJA=78°C/W
1
0
0.01
0.01
MTC5806AQ8
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
TJ, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 6/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q1( N-channel)
Typical Transfer Characteristics
50
40
VDS=10V
TJ(MAX) =150°C
TA=25°C
θJA=78°C/W
40
30
Power (W)
ID, Drain Current (A)
35
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
25
20
15
10
30
20
10
5
0
0.001
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized EffectiveTransient Thermal
Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=78 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC5806AQ8
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 7/12
CYStech Electronics Corp.
Typical Characteristics : Q2( P-channel)
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
-BVDSS, Normalized Drain-Source
Breakdown Voltage
20
-ID, Drain Current (A)
-10V, -9V, -8V, -7V,-6V,-5V
15
VGS=-4V
10
VGS=-3V
5
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
0
0
1
2
3
4
-VDS , Drain-Source Voltage(V)
-60
5
-20
Static Drain-Source On-State resistance vs Drain Current
180
Source Drain Current vs Source-Drain Voltage
1000
1.2
VGS=0V
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
20
60
100
140
Tj, Junction Temperature(°C)
VGS=-3V
VGS=-4.5V
100
VGS=-10V
1
Tj=25°C
0.8
0.4
0.2
10
0.01
0.1
1
-ID, Drain Current(A)
0
10
R DS(on) , Normalized Static Drain-Source
On-State Resistance
200
180
ID=-3.5A
160
2
4
6
-IS , Source Drain Current(A)
8
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(on) , Static Drain-Source On-State
Resistance(mΩ)
Tj=150°C
0.6
140
120
100
80
60
40
20
2
1.8
VGS=-10V, ID=-3.5A
1.6
1.4
1.2
1
0.8
RDS(ON) @Tj=25°C : 69mΩ typ.
0.6
0.4
0
0
MTC5806AQ8
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 8/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
-VGS(th) , Threshold Voltage(V)
10000
Capacitance---(pF)
Ciss
1000
C oss
100
ID=-250μA
1.2
1
0.8
0.6
Crss
0.4
10
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
Gate Charge Characteristics
VDS=-48V
-VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
10
10
1
0.1
VDS=-10V
Pulsed
TA=25°C
8
VDS=-30V
VDS=-12V
6
4
2
ID=-3.5A
0
0.01
0.001
0.01
0.1
1
-ID, Drain Current(A)
0
10
2
4
6
8
Qg, Total Gate Charge(nC)
10
12
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4.5
100μs
RDS(ON)
Limited
10
-ID, Maximum Drain Current(A)
100
-ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
1ms
10ms
1
100m
1s
0.1
TA=25°C, Tj=150°C, VGS=-10V
θJA=78°C/W, Single Pulse
DC
4
3.5
3
2.5
2
1.5
1
TA=25°C, VGS=-10V
RθJA=78°C/W
0.5
0
0.01
0.01
MTC5806AQ8
0.1
1
10
-ID, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 9/12
CYStech Electronics Corp.
Typical Characteristics(Cont.) : Q2(P-channel)
Typical Transfer Characteristics
50
40
VDS=-10V
35
TJ(MAX) =150°C
TA=25°C
θJA=78°C/W
40
30
Power (W)
-ID, Drain Current (A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
25
20
15
10
30
20
10
5
0
0.001
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
10
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC5806AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC5806AQ8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 11/12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC5806AQ8
CYStek Product Specification
Spec. No. : C407Q8
Issued Date : 2008.12.02
Revised Date : 2012.05.17
Page No. : 12/12
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
5806SS
Date Code
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.000
5.800
6.200
*1.270
0.400
1.270
0°
8°
Inches
Min.
Max.
0.150
0.157
0.228
0.244
*0.050
0.016
0.050
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC5806AQ8
CYStek Product Specification