MTC8402S6R

Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 1/ 12
CYStech Electronics Corp.
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTC8402S6R
BVDSS
ID
RDSON(typ.) @VGS=(-)10V
RDSON(typ.) @VGS=(-)5V
Features
• ESD protected
• High speed switching
• Low-voltage drive
• Pb-free package
Equivalent Circuit
N-CH
60V
0.3A
1.6Ω
1.8Ω
P-CH
-50V
-0.18A
5Ω
6Ω
Outline
MTC8402S6R
Tr1
SOT-363R
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (TA=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Limits
N-channel P-channel
60
-55
Unit
V
Gate-Source Voltage
VGS
±20
±20
V
Continuous Drain Current @TA=25 °C, VGS=10V(-10V)
ID
0.3
-0.18
A
Continuous Drain Current @TA=70 °C, VGS=10V(-10V)
ID
0.24
-0.14
A
IDM
1.2
-0.8
A
Pulsed Drain Current (Note 1)
Power Dissipation @TA=25°C
Power Dissipation @TA=70°C
Operating Junction and Storage Temperature Range
PD
Tj; Tstg
0.30
0.18
-55~+150
W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3.Surface mounted on minimum pad of FR-4 board, t≤5s.
MTC8402S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 2/ 12
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Symbol
Limit
Unit
Rth,ja
415
°C/W
Note : Surface mounted on minimum pad of FR-4 board, t≤5s.
Q1, N-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
60
1.0
-
1.6
1.6
1.8
1.9
100
2.5
±10
1
10
2.2
2.4
2.5
-
-
29.3
4.2
2.8
8
6
11
8
0.77
0.1
0.25
-
-
0.8
0.3
1.2
1.2
Unit
Test Conditions
mS
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=48V, VGS=0
VDS=48V, VGS=0 (Tj=70°C)
VGS=10V, ID=500mA
VGS=5V, ID=100mA
VGS=4.5V, ID=100mA
VDS=10V, ID=100mA
pF
VDS=25V, VGS=0, f=1MHz
ns
VDS=30V, ID=100mA, VGS=10V,
RG=25Ω
nC
VDS=30V, ID=300mA, VGS=10V
V
μA
Ω
A
V
VGS=0V, IS=100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC8402S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 3/ 12
Q2, P-Channel Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*IS
*ISM
*VSD
Min.
Typ.
Max.
-50
-1
80
-1.4
5
6
-
-2
±20
-1
-10
6.5
8
-
-
24.1
4.6
1.5
6
3
10
4
0.53
0.07
0.17
-
-
-0.85
-0.18
-0.8
-1.2
Unit
Test Conditions
mS
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±20V, VDS=0
VDS=-40V, VGS=0
VDS=-40V, VGS=0 (Tj=70°C)
VGS=-10V, ID=-100mA
VGS=-5V, ID=-100mA
VDS=-10V, ID=-100mA
pF
VDS=-25V, VGS=0, f=1MHz
ns
VDS=-25V, ID=-100mA, VGS=-10V,
RG=25Ω
nC
VDS=-25V, ID=-180mA, VGS=-10V
V
μA
Ω
A
V
VGS=0V, IS=-130mA
Ordering Information
Device
MTC8402S6R-0-T1-G
MTC8402S6R
Package
SOT-363
(Pb-free lead plating and Halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 4/ 12
Q1, N-Channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
1.2
ID, Drain Current (A)
1.4
10V
6V
4.5V
4V
1.0
0.8
3.5V
0.6
3V
0.4
2.5V
0.2
ID=250μA,
VGS=0V
1.2
1
0.8
VGS=2V
0.6
0.0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
10
-75 -50 -25
12
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
1
VGS=2.5V
VGS=4.5V
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
VGS=0V
VGS=10V
1
0.001
0
0.01
0.1
ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
4
2
ID=100mA
3.5
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
3
2.5
2
1.5
1
0.5
VGS=10V, ID=100mA
1.8
1.6
1.4
1.2
1
0.8
RDSON@Tj=25°C : 1.5Ω
0.6
0
0
MTC8402S6R
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
9
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 5/ 12
Q1, N-Channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th) , Normalized Threshold Voltage
100
Capacitance---(pF)
Ciss
10
C oss
Crss
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
8
VGS, Gate-Source Voltage(V)
6
4
2
6
4
VDS=30V
ID=300mA
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.2
0.4
0.6
0.8
Qg, Total Gate Charge(nC)
1
Maximum Drain Current vs JunctionTemperature
10
0.35
100μs
RDS(ON)
Limit
1
1ms
10ms
0.1
100m
TA=25°C, Tj=150°C,
VGS=10V, RθJA=415°C/W
Single Pulse
0.01
DC
0.001
ID, Maximum Drain Current(A)
ID, Drain Current (A)
60 80 100 120 140 160
Gate Charge Characteristics
TJ(MAX) =150°C
TA=25°C
RθJA=415°C/W
0
0.001
20 40
10
10
8
0
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Power (W)
1.6
0.3
0.25
0.2
0.15
0.1
TA=25°C, VGS=10V, RθJA=415°C/W
0.05
0
0.01
MTC8402S6R
0.1
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 6/ 12
Q1, N-Channel Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.35
1.4
VDS=10V
Mounted on FR-4 board
0.3
PD, Power Dissipation(W)
ID, Drain Current (A)
1.2
1
0.8
0.6
0.4
0.25
0.2
0.15
0.1
0.05
0.2
0
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
0
10
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=415 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTC8402S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 7/ 12
Q2, P-Channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
0.6
-ID, Drain Current (A)
0.5
4.5V
0.4
4V
0.3
3.5V
0.2
3V
2.5V
0.1
ID=-250μA,
VGS=0V
-BVDSS, Normalized Drain-Source
Breakdown Voltage
5V
1.2
1
0.8
-VGS=2V
0.6
0.0
0
1
2
3
4
5
6
7
8
9
-75 -50 -25
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
11
-VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(Ω)
12
10
-VGS=3V
9
8
7
-VGS=5V
6
5
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
VGS=0V
-VGS=10V
0
4
0.001
0.01
0.1
-ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
-IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs
Gate-Source Voltage
1.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
20
R DS(ON) , Static Drain-Source OnState Resistance(Ω)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
16
ID=-100mA
ID=-30mA
12
8
4
1.6
1.4
VGS=-5V, ID=-100mA
1.2
1
VGS=-10V, ID=-100mA
0.8
0.6
0.4
0
0
MTC8402S6R
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
9
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 8/ 12
Q2, P-Channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
-VGS(th) , Normalized Threshold Voltage
Capacitance---(pF)
100
Ciss
10
C oss
Crss
1.6
ID=-250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
-60 -40 -20
100
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
60 80 100 120 140 160
10
-VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=415°C/W
8
Power (W)
20 40
Gate Charge Characteristics
10
6
4
2
0
0.001
8
6
4
VDS=-25V
ID=-180mA
2
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
-ID, Maximum Drain Current(A)
1ms
RDS(ON)
10ms
0.1
100m
DC
0.01
0.2
0.3
0.4
Qg, Total Gate Charge(nC)
0.5
0.6
0.2
100μs
Limited
0.1
Maximum Drain Current vs JunctionTemperature
1
-ID, Drain Current (A)
0
Tj, Junction Temperature(°C)
TA=25°C, Tj=150°C,
VGS=-10V, RθJA=415°C/W
Single Pulse
0.001
0.15
0.1
0.05
TA=25°C, VGS=-10V, RθJA=415°C/W
0
0.01
MTC8402S6R
0.1
1
10
-VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 9/ 12
Q2, P-Channel Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.35
600
VDS=-10V
PD, Power Dissipation(W)
-ID, Drain Current (mA)
400
300
200
0.25
0.2
0.15
0.1
100
0.05
0
0
0
1
Mounted on FR-4 board
0.3
500
2
3
4
-VGS , Gate-Source Voltage(V)
5
0
6
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=415 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTC8402S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 10/ 12
Reel Dimension
Carrier Tape Dimension
MTC8402S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 11/ 12
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC8402S6R
CYStek Product Specification
Spec. No. : C888S6R
Issued Date : 2012.12.24
Revised Date : 2013.03.05
Page No. : 12/ 12
CYStech Electronics Corp.
SOT-363 Dimension
Marking:
XX
KNP
Date
Code
6-Lead SOT-363R Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Source1 (S1)
Pin 2. Gate1 (G1)
Pin 3. Drain2 (D2)
Pin 4. Source2 (S2)
Pin 5. Gate2 (G2)
Pin 6. Drain1 (D1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC8402S6R
CYStek Product Specification