Datasheet

SSF6008
Feathers:
ID =84A

Advanced trench process technology

avalanche energy, 100% test

Fully characterized avalanche voltage and current
BV=60V
Rdson=8mΩ
Description:
The SSF6008 is a new generation of high voltage and low
current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF6008 is assembled
in high reliability and qualified assembly house.
Application:

Power switching application
SSF6008TOP View (T0-220)
Absolute Maximum Ratings
Parameter
Max.
[email protected]=25 ْC
Continuous drain current,[email protected]
84
[email protected]=100ْC
Continuous drain current,[email protected]
76
IDM
Pulsed drain current
①
Units
A
310
Power dissipation
181
W
Linear derating factor
1.5
W/ C
ْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy ②
400
mJ
EAR
Repetitive avalanche energy ①
20
mJ
dv/dt
Peak diode recovery voltage
30
v/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
–55 to +175
ْC
[email protected]=25ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
0.83
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC (unless otherwise specified)
Parameter
Min.
Typ.
Drain-to-Source breakdown voltage
60
—
—
V
VGS=0V,ID=250μA
RDS(on) Static Drain-to-Source on-resistance
—
5.5
8
mΩ
VGS=10V,ID=30A
VGS(th)
2.0
—
4.0
V
VDS=VGS,ID=250μA
—
—
2
—
—
10
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
BVDSS
IDSS
IGSS
Gate threshold voltage
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2009.7.10
Max. Units
Test Conditions
VDS=60V,VGS=0V
μA
VDS=60V,
VGS=0V,TJ=150ْC
nA
VGS=20V
VGS=-20V
Version: 2.2
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SSF6008
Qg
Total gate charge
—
90
Qgs
Gate-to-Source charge
—
18
—
Qgd
Gate-to-Drain("Miller") charge
—
28
—
td(on)
Turn-on delay time
—
18.2
tr
Rise time
—
15.6
td(off)
Turn-Off delay time
—
70.5
tf
Fall time
—
13.8
VGS=10V
Ciss
Input capacitance
—
3150
VGS=0V
Coss
Output capacitance
—
300
Crss
Reverse transfer capacitance
—
240
ID=30A,VGS=10V
nC
VDD=30V
VDD=30V
ID=2A ,RL=15Ω
nS
RG=2.5Ω
pF
VDS=25V
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous
Source
Current.
(Body Diode)
Pulsed
Source
(Body Diode)
Current
①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
Forward Turn-on Time
Min.
Typ.
Max.
—
—
84
Units
Test Conditions
MOSFET symbol
showing the
A
integral reverse
—
—
310
—
—
1.3
V
TJ=25ْC,IS=60A,VGS=0V ③
—
57
—
nS
TJ=25ْC,IF=75A
—
107
—
μC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, VDD = 30V,Id=37A
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS Test Circuit:
BV dss
Gate Charge Test Circuit:
V dd
L
Vgs
RL
RG
VDD
1mA
©Silikron Semiconductor Corporation
2009.7.10
RG
Version: 2.2
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SSF6008
Switch Time Test Circuit:
Switch Waveform:
Transfer Characteristic
Capacitance
On Resistance vs. Junction Temperature
©Silikron Semiconductor Corporation
2009.7.10
Breakdown Voltage vs. Junction Temperature
Version: 2.2
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SSF6008
Source-Drain Diode Forward Voltage
Gate Charge
Safe Operation Area
Max Drain Current vs. Junction
Temperature
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2009.7.10
Version: 2.2
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SSF6008
TO-220 MECHANICAL DATA:
©Silikron Semiconductor Corporation
2009.7.10
Version: 2.2
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