SSF1030D
Feathers:
Advanced trench process technology
ID =45A
Ultra low Rdson, typical 23mohm
BV=100V
High avalanche energy, 100% test
Rdson=23mΩ（typ.）
Fully characterized avalanche voltage and current
Description:
The SSF1030D is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF1030D is
assembled in high reliability and qualified assembly house.
Application:
Power switching application
SSF1030D TOP View (DPAK)
Absolute Maximum Ratings
Parameter
Max.
ID@Tc=25 ْC
Continuous drain current,VGS@10V
45
ID@Tc=100ْC
Continuous drain current,VGS@10V
35
IDM
Pulsed drain current ①
180
Power dissipation
84
W
Linear derating factor
1.5
W/ ْC
Gate-to-Source voltage
±20
V
168
mJ
PD@TC=25ْC
VGS
EAS
Single pulse avalanche energy
EAR
Repetitive avalanche energy
TJ
Operating Junction and
TSTG
Storage Temperature Range
②
Units
A
TBD
ْC
–55 to +175
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
—
1.78
—
RθJA
Junction-to-ambient
—
—
62
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Test Conditions
BVDSS
Drain-to-Source breakdown voltage
100
—
—
V
VGS=0V,ID=250μA
RDS(on)
Static Drain-to-Source on-resistance
—
23
25
mΩ
VGS=10V,ID=30A
VGS(th)
Gate threshold voltage
2.0
3.1
4.0
V
VDS=VGS,ID=250μA
-
50
—
S
VDS=5V,ID=30A
—
—
1
—
—
10
gfs
IDSS
Forward transconductance
Drain-to-Source leakage current
©Silikron Semiconductor Corporation
2010.3.15
VDS=100V,VGS=0V
μA
VDS=100V,
VGS=0V,TJ=150ْC
Version: 2.1
page
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SSF1030D
IGSS
Qg
Gate-to-Source forward leakage
—
—
100
Gate-to-Source reverse leakage
—
—
-100
Total gate charge
—
4.2
—
ID=30A
VDD=30V
VGS=20V
nA
VGS=-20V
Qgs
Gate-to-Source charge
—
15
—
Qgd
Gate-to-Drain("Miller") charge
—
14.6
—
VGS=10V
td(on)
Turn-on delay time
—
14.2
—
VDD=30V
Rise time
—
40
—
Turn-Off delay time
—
7.3
—
Fall time
—
14.8
—
VGS=10V
Ciss
Input capacitance
—
190
—
VGS=0V
Coss
Output capacitance
—
135
—
Crss
Reverse transfer capacitance
—
4.2
—
tr
td(off)
tf
nC
ID=2A ,RL=15Ω
nS
RG=2.5Ω
VDS=25V
pF
f=1.0MHZ
Source-Drain Ratings and Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ①
VSD Diode Forward Voltage
trr
Reverse Recovery Time
Qrr Reverse Recovery Charge
ton
.
Forward Turn-on Time
.
Min.
Typ.
Max.
—
—
45
Units
Test Conditions
MOSFET symbol
A
showing the
integral reverse
—
—
180
—
—
1.3
V
TJ=25ْC,IS=30A,VGS=0V ③
－
57
—
nS
TJ=25ْC,IF=30A
－
107
—
nC
di/dt=100A/μs ③
p-n junction diode.
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes:
① Repetitive rating; pulse width limited by max junction temperature.
② Test condition: L =0.3mH, ID = 33.5A, VDD = 50V
③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
EAS test circuit
©Silikron Semiconductor Corporation
Gate charge test circuit
2010.3.15
Version:2.1
page
2of5
SSF1030D
Switch Time Test Circuit：
Switch Waveforms:
Transfer Characteristic
Capacitance:
On Resistance vs. Junction Temperature
Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation
2010.3.15
Version: 2.1
page
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SSF1030D
Source-Drain Diode Forward Voltage
Gate Charge
Max Drain Current vs. Junction Temperature
Safe Operation Area
Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation
2010.3.15
Version: 2.1
page
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SSF1030D
DPAK MECHANICAL DATA:
©Silikron Semiconductor Corporation
2010.3.15
Version: 2.1
page
5of5