APTGT100H60T3G Full - Bridge Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 100A* @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control 13 14 Q1 CR3 CR1 18 19 Q2 22 7 23 8 CR2 26 Q3 11 Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design High level of integration Internal thermistor for temperature monitoring 10 Q4 CR4 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 150 * 100 * 200 ±20 340 Tj = 150°C 200A @ 550V TC = 25°C TC = 80°C TC = 25°C Unit V A V W * Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGT100H60T3G – Rev 2 October, 2012 Symbol VCES APTGT100H60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 100A Tj = 150°C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V 5.0 Typ 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 100A RG = 3.3 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 100A Tj = 25°C RG = 3.3 Tj = 150°C Fall Time Td(on) Tr Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn on Energy Eoff Turn off Energy Min Typ 6100 390 190 115 45 225 pF ns 55 130 50 ns 300 70 0.4 0.875 2.5 3.5 mJ mJ Reverse diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy IF = 100A VGE = 0V IF = 100A VR = 300V di/dt =2000A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 100 1.6 1.5 125 220 4.7 Tj = 150°C Tj = 25°C 9.9 1.1 Tj = 150°C 2.4 Max 250 500 Unit V µA A 2 V ns µC mJ 2-6 APTGT100H60T3G – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGT100H60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min Typ Max 0.44 0.77 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 4000 -40 -40 -40 2 °C/W V 175 125 100 3 110 °C N.m g See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGT100H60T3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTGT100H60T3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 200 200 TJ=25°C 175 TJ=150°C 125 IC (A) IC (A) 150 TJ=125°C 150 100 50 50 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 7 175 1 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 3.3Ω TJ = 150°C 6 TJ=25°C 150 5 E (mJ) 125 100 TJ=125°C 75 0.5 TJ=150°C TJ=25°C 4 Er 3 5 6 7 Eon 0 0 8 9 10 11 0 12 25 50 75 100 125 150 175 200 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 250 VCE = 300V VGE =15V IC = 100A TJ = 150°C 200 Eoff Eon IF (A) E (mJ) 3.5 Eoff 1 25 6 3 2 50 8 2.5 Energy losses vs Collector Current Transfert Characteristics 200 IC (A) VGE=9V 25 TJ=25°C 0 VGE=15V 100 75 0 VGE=13V 125 75 25 VGE=19V TJ = 150°C 175 4 150 100 2 Er VGE=15V TJ=150°C RG=3.3Ω 50 Eon 0 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0 100 200 300 400 VCE (V) 500 600 700 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 IGBT 0.9 0.7 0.3 0.5 0.2 0.1 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 4-6 APTGT100H60T3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.5 APTGT100H60T3G Forward Characteristic of diode 200 VCE=300V D=50% RG=3.3Ω TJ=150°C 100 ZCS 80 150 125 Tc=85°C ZVS 60 175 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 TJ=125°C 75 40 TJ=150°C 50 Hard switching 20 25 TJ=25°C 0 0 0 25 50 75 100 125 0 150 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.9 Diode 0.7 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGT100H60T3G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.8 APTGT100H60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6-6 APTGT100H60T3G – Rev 2 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.