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APTC60HM35T3G
Full - Bridge
Super Junction MOSFET
Power Module
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
13 14
Q1
Q3
18
11
22
Features

7
19
10
23
Q2
8
Q4
26
4
27
3
29
30


32
31
15
16
R1
28 27 26 25
23 22


20 19 18
29
16
30
15
31
14
13
32
2
3
4
VDSS = 600V
RDSon = 35m max @ Tj = 25°C
ID = 72A @ Tc = 25°C
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
72
54
200
±20
35
416
20
1
1800
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-7
APTC60HM35T3G – Rev 2 October, 2012
Symbol
VDSS
APTC60HM35T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 72A
VGS = VDS, ID = 5.4mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
14
5.13
0.42
Max
40
375
35
3.9
±150
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
nF
518
nC
58
222
21
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5Ω
1340
µJ
1960
2192
µJ
2412
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Tc = 25°C
Tc = 80°C
Typ
72
54
VGS = 0V, IS = - 72A
IS = - 72A
VR = 350V
diS/dt = 200A/µs
Max
Unit
A
1.2
6
V
V/ns
Tj = 25°C
580
ns
Tj = 25°C
46
µC
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS  - 72A
di/dt  200A/µs
VR  VDSS
Tj  150°C
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2-7
APTC60HM35T3G – Rev 2 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTC60HM35T3G
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M4
Typ
Max
0.30
150
125
100
4.7
110
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-7
APTC60HM35T3G – Rev 2 October, 2012
SP3 Package outline (dimensions in mm)
APTC60HM35T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
VGS=15&10V
6.5V
6V
5.5V
5V
4.5V
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
240
200
160
120
4V
80
TJ=125°C
40
TJ=25°C
TJ=-55°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 36A
1.05
VGS=10V
VGS=20V
1
7
DC Drain Current vs Case Temperature
80
RDS(on) vs Drain Current
1.1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
0.95
0.9
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
4-7
APTC60HM35T3G – Rev 2 October, 2012
RDS(on) Drain to Source ON Resistance
ID, Drain Current (A)
280
ID, DC Drain Current (A)
ID, Drain Current (A)
Low Voltage Output Characteristics
400
360
320
280
240
200
160
120
80
40
0
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
100
100 µs
limited by RDSon
1 ms
Single pulse
TJ=150°C
TC=25°C
10
0.6
10 ms
1
-50 -25
0
25
50
75 100 125 150
1
Ciss
Coss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 72A
14
ID=72A
TJ=25°C
12
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
5-7
APTC60HM35T3G – Rev 2 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60HM35T3G
APTC60HM35T3G
Delay Times vs Current
350
td(off)
300
250
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
200
150
100
50
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
60
40
tr
20
td(on)
0
0
0
20
40
60
80
100
120
0
20
40
ID, Drain Current (A)
Switching Energy (mJ)
Switching Energy (mJ)
Eoff
Eon
120
VDS=400V
ID=72A
TJ=125°C
L=100µH
8
6
Eoff
Eon
4
2
0
20
40
60
80
100
ID, Drain Current (A)
120
ZCS
ZVS
100
80
VDS=400V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
5
10
15
20
25
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
120
0
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Frequency (kHz)
100
Switching Energy vs Gate Resistance
140
20
80
10
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
0
40
60
ID, Drain Current (A)
Switching Energy vs Current
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
60
tf
hard
switching
TJ=150°C
100
0
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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6-7
APTC60HM35T3G – Rev 2 October, 2012
td(on) and td(off) (ns)
Rise and Fall times vs Current
120
APTC60HM35T3G
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7-7
APTC60HM35T3G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.