APT40GL120JU3 ISOTOP® Buck chopper Trench + Field Stop IGBT4 Power module Application AC and DC motor control Switched Mode Power Supplies C G E A A E G VCES = 1200V IC = 40A @ Tc = 80°C C Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Low conduction losses Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant ISOTOP Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1200 65 40 70 ±20 220 Tj = 150°C 70A @ 1100V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A October, 2012 Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT40GL120JU3 – Rev 1 Symbol VCES APT40GL120JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 35A Tj = 150°C VGE = VCE , IC = 1.2mA VGE = 20V, VCE = 0V Min Typ 5.0 1.85 2.25 5.8 Min Typ Max Unit 250 2.25 µA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Rise Time Turn-off Delay Time Fall Time Td(off) Tf Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=35A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 35A RG = 12 TJ = 25°C VGE = ±15V VCE = 600V TJ = 150°C IC = 35A TJ = 25°C RG = 12 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 1950 155 115 pF 0.27 µC 130 20 300 ns 45 150 35 350 80 2.6 4 2 3 ns mJ mJ 140 A Chopper diode ratings and characteristics IRM IF VF Min VR=1200V trr Reverse Recovery Time Qrr Reverse Recovery Charge Tc = 80°C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V di/dt =200A/µs 100 500 Tj = 125°C Tj = 25°C 30 2.6 3.2 1.8 300 Tj = 125°C Tj = 25°C Tj = 125°C 380 360 1700 www.microsemi.com Unit V Tj = 25°C Tj = 150°C DC Forward Current Diode Forward Voltage Max 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ µA A 3.1 October, 2012 VRRM Test Conditions V ns nC 2-6 APT40GL120JU3 – Rev 1 Symbol Characteristic APT40GL120JU3 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ IGBT Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.68 1.2 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate Dimensions in Millimeters and (Inches) www.microsemi.com 3-6 APT40GL120JU3 – Rev 1 October, 2012 ISOTOP® is a registered trademark of ST Microelectronics NV APT40GL120JU3 Typical Performance Curve Output Characteristics (VGE=15V) 70 Output Characteristics 70 60 TJ=25°C VGE=19V 50 TJ=150°C 40 IC (A) IC (A) 50 30 VGE=15V 40 30 20 20 10 10 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 70 E (mJ) 8 40 30 TJ=150°C 4 Eon Eoff 2 10 0 0 5 6 7 8 9 10 11 12 0 13 10 20 30 40 50 60 70 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 10 80 70 VCE = 600V VGE =15V IC = 35A TJ = 150°C 6 Eon 60 IC (A) 8 E (mJ) 3 6 4 20 2 VCE (V) VCE = 600V VGE = 15V RG =12 Ω TJ = 150°C 10 50 1 Energy losses vs Collector Current 12 TJ=25°C 60 IC (A) TJ = 150°C 60 Eoff 4 50 40 30 VGE=15V TJ=150°C RG=12 Ω 20 2 10 0 0 0 10 20 30 40 Gate Resistance (ohms) 50 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 IGBT 0.5 0.7 0.4 0.5 0.3 October, 2012 0.6 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APT40GL120JU3 – Rev 1 Thermal Impedance (°C/W) 0.7 APT40GL120JU3 Forward Characteristic of diode VCE=600V D=50% RG=12 Ω TJ=150°C Tc=75°C ZVS 120 80 70 60 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 160 80 TJ=125°C 50 40 30 40 Hard switching 10 0 0 0 10 TJ=25°C 20 ZCS 20 30 40 IC (A) 50 60 0.0 70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.8 Diode 0.9 0.7 0.5 0.6 0.2 0 0.00001 0.3 Single Pulse 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) October, 2012 0.4 www.microsemi.com 5-6 APT40GL120JU3 – Rev 1 Thermal Impedance (°C/W) 1.4 APT40GL120JU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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